an Samsung Semiconductor Laser - Contents - VS) Gherveral Pravrvciieegy parecer eee eee eee ee tenon nanennne ener eatane tees 1-2 [8] Electrical & optical parameters & definitions... ween a ee eG fe] Hen fo read the part puniber - MUI oui eeaes 5 {| Ped lager - 835nm 1, SLOSG3S18240 for Measuring instru! 2. SLOGMMESSIC for Monsuring insinanent SB, GLOGS RESO or ASG) WET oop ee nerve nner erret en eereeereettteemenentteneee ff 4. SUDGS018080 for Measuring instrument | Barcode Sommer. 4 . SLDG3918000 for Measuring instrument | Barcode Sommer oo 16 6. SUDG3578250 for Measuring instrument | arsode Seger ics isscauas 11 im) Red lager - 860n 7. SLOSSIIS25057T tor Borcode Scammer ! Pointer ... srsgenmmmue tavteavermateveaneravennenes wae TE 8, SLOGSCGSSSO5T for Baroode Scare |! POer oo. seer eeee seenuenrymeeueanenens 13 8. SLDGSNE60 for Bamode Soannor i Sensor ......... 220... aid 1. SLOSS0182 7 for OVO-F DVDR... we DD. SLD TBS TL tor DOV PD nese ee cae tee cece nea eenneeeeeeneaeanenecneneneee 16 12. SLOBROVE2 7M for DS DR ce cece tee cence neaeeneeeeeeeneaeaneseneaeaes if Th. SLESROVGS71 dor Gtyiecerates Jf liediveriring| Gewese Seer cis saseessscncaeaees 16 14. SLDESO188T1 far byvo-Rwy pernrperrwuttiettnerere eetnerreewveeee peneeceerenttenneerereetnnterrererneateete ap fil Infrared laser - 780ren PE. SLOVO TB2B far CRS CE nc eee eemnne eee snnannne sya seneeneness fy sumenmeeetteeeneen 20 Th SLOTSDB2G1F for COMP f CDR... 17. SLOMS018282C for LEU (Laser printer) Th. SLOMSDIGZTID for SOM (Discrman} ..... TH SLOFEIGS6OR for LSM) (leer prinbet) cocci cscs cesses ie reecsseinescuaa a4 20. SLOVEOVRSTT Bor CO tO ccc tccenserses concer roscoe esac crea eaE 25 ee 26 If) Pied J infra-Fied Monolithic laser 22. 2 Boam beer for ee eR nnn eaeetenee 27 TE) Pas BPG cc ee nee eeneonenesteeesnonosatea noes i ttenunona aes enn tae Hyun atau Ha 26 BE) LEMMINGS WAM ccc cctrsecssnesmtsseserrnnccsenssossnnaasvossnereaannesonsnvasnnsreernaancasas aesn sana rrrennaanagssensseana rit 28er Samsung Semiconductor Laser l General handling precautions 1, (RT RS TH Lace Desde (LO So Se eT en en eT be!) ong Sobers rf fees bp ee pAr o Curent in forward dieectien Peewee in d@erenice fom usu eeenicomivcicar clecem LI? hers fhe nec pecoberied 1LO Wy ODEs of eee carer Oder for bom papers LD ged B-Te fer a Hiph peer LO eed bw applied foward wohage tusueihy 2 Bet wey ingenton pecuiedy of LD le high Gueem deretee |-2000-a00avor| duing LOD operaiice. Therefor, LO aoonios qeeorgies @ signloand heat tis acim lear 20h AS Sperebon croc LE Pet a fdeetaty teal ture fer lee OUERLA port [Sel for ioe Boer LD and Die T2OTeY for bigs power LO} Bul fey heave eo wery Aion dere of beer cedteiion ina actee Ger aed on cipal minor feat [-1OR@cer aed more) Thenmfoe. feere Bo opie! (power (in ceed by opel Gamage of ceiget minor facet / O00 tahoe Opbea! Careaca) i - ge 7 Hogh le C Forward Coreet (rai) | Fig. 1 GOO (Gaereple Goce Damage 7.1 Gere Ga type COC pheeoraon of lee code Wien wou opermie LO fee oocuTeeoe of CO, ooeiieg suevent af a epic power eceld Ge must higher than befonm GOO -Pigiibh in fe worst cam, leer poser could mot mech oo requieed pawer due tn G00 -Fig-iigh. When yow dre LOL please gey ettenfion fo LO apeniiees under Oo pewer kel 3LO fer @ ery qui GBcEPoe eres ligt! feporee [eet en @ fie feceecotd ene lie), If connection we Tera feakece LO ore extremely qucepibie io damege ceed by curent wages ome be ose bere foe an Pehfeneous aoplcsfon exit pulse curert cesses a raped LOfs detereenion. Weonewr You Bendis LD, skeaso pay sit ahendon to fio followieg pMecauters. 2 ELECTROSTATIC SURGE PREVENT I 4,7 ] Boi Acity boat Be UD oe en ee et Hecrowiss fectege fen Soheed semicomiccie cine anu ~ = Lire Tequre oe careul peewerive memes CO alo mould be BM CeRMoF | cde . Tapper by ein sucge due i slechostatic denharge Fig 2 Shiets WG 8 SIGS Sheieiiy foe! Ginsu of Garang When shippieg Fig, 2 Elote: Electricity Treat Circuk ie bet ceocecd, Bee) ou Se lett if eben: Pega eet! meciote: carping tr) erportadon Esemgs cl a pce! or ic 5 workbench for operates fh Laser inde Fig. 2 ] a | ip, .Greund work bebles orel eos using conduchwe fobie ; | :- - Ki. mrimia ined cer reavia: * 7.Greund oparatore ming conductive wrist banda; | TA] geed tends ae aiall aa aoldeeing Groans ehowkl be | case Se * grourd ! i The gurndirng showki be comeded though 6 resinor of ort ' eepeTNtely IC = nller Samsung Semiconductor Laser 3. PRECAUTIONS FOR CURRENT DRIVING CIRCUITS 1.While operating, LD can be easily damaged by surge currents which may occur during power on and off of the drive circuit or while adjusting the optical power output. 2.If possible, for standard testing process we recommend to use the special industrial laser diode current driver for example the Melles Griot current source 06 DLD 201 or other type. 3.When you use nonindustrial self designed drivers, please make it sure that the spike current generated in on-off switching of power supplies does not exceed the maximum LD operation current. It is recommended to insert an appropriate filter consisting of a appropriate CR circuit or other slow start circuit when chattering or overshoot shown in Fig. 4. Care must also be taken to prevent surge currents from entering the circuit from external sources. Use an AC noise filter. A AC100V ff, re ~ j 4 2 3 | 2 => 1- AC Noise Filter; 2- Slow Starter; 3- APC Driver Fig. 4 In pulse mode operation, overshoot in optical power output is . _ Output Laser Power Maximum - sometimes observed. Power Rating In this case, try to suppress the overshoot or lower the overshoot 0 t power level below the maximum LD operation current shown in Fig. 5. te Pumping Pulse 4.Make all electrical connections secure. An open or short circuit Current while the LD is on, will result in deterioration. It is desirable to use shielded cables. Fig. 5.Use a reliable control for setting the operation current. Improper contacts may result in current surges. 6.While LD is powered up, don't touch probes from a oscilloscope or volt-meter against the circuit or LD terminals. 7.Don't CONNECT OR DISCONNECT the laser diode terminals 4. HEAT DIFFUSION PRECAUTIONS. while the POWER is ON. 1.All main LD's parameters depend on a temperature. Because of LD in operation during generation of heat at the p-n junction/ active layer/ it is necessary provide a good heat conduction mechanism. Usually LD chip is mounted on a heat sink within the package to facilitate effective heat diffusion. Because the heat sink conducts the generated heat to the package flange, it is advisable LD to attach a heat radiator to the LD package flange for better heat diffusion. Thermal contact between the package flange and the heat radiator plate must be good. Furthermore heat diffusion also depends on the design of the radiator plate, i.e., shape, size and material. An appropriate design is required for each industrial application. 2.Ineffective heat diffusion can cause a positive feed back of driving current and limit the usability of the LD. Namely, high temperature of LD package reduces an optical output power below an expected level, which requires higher driving current to maintain the nominal output. As a result, this raises the temperature and requires more higher current. Thus excessive driving current can destroy LD. 5. ON THE SAFETY OF LASER LIGHT Avoid to look into the laser light directly or directly through an optical system. It is very DANGEROUS! Samsung red and IR laser diodes correspond to the class Illb of the International Radiation Standard of the Laser Products. Visible Laser Radiation Although the typical optical output power of Samsung low power laser Avoid Direct Eye Exposure ranges from a several mW to SmW/, their power density can reach 1MWicm. For observing laser beam safely, you always have to use safety CLASS 3B LASER PRODUCT goggles that block infrared rays. ae eee --Pp-er Samsung Semiconductor Laser l=! Electrical & optical parameters & definitions Maximum allowable instantaneous light power in pulse or CW Output optical power Pop mode. Up to this output level there are no kinks in the Light- Current curve. The forward current through the LD which necessary for the Operating current lop LD to produce its specified typical optical output power The forward voltage across the LD by forward operating Operating voltage Vop current The wavelength of the laser spectral line with the greatest Wavelength Ap intensity The value of the incremental change in laser beam power Watt-ampere / Slope / Efficiency SE for an incremental change in forward current above the threshold current. The monitoring photodiode current is proportional to LD laser Monitoring current Im output power/ at a specified reverse bias voltage The forward current value at which the LD begins to produce Threshold current Ith laser output The laser beam's full angular at the half-maximum intensity Laser beam divergency off points(FWHM), measured in horizontal plane /parallel to the in horizontal plane LD p-n junction plane/ The laser beam's full angular at the half-maximum _ intensity Laser beam divergency 61 points(FWHN), measured in vertical plane in vertical plane /perpendicular to the LD p-n junction plane/ Maximum admissible reverse bias voltage, which may be LD reverse voltage VR applied to the LD without a damage Maximum admissible reverse bias voltage, which may be PD bias voltage VRp applied to the monitoring PD without a damage Range of the case temperature within which LD may be Operating temperature Topr safety stored Range of the ambient temperature within which LD may be Storage temperature Tstg safety stored Forward current If Current through the forward biased LD Forward bias voltage VE Laser diode voltage by an applied forward biaser Samsung Semiconductor Laser [a] Package 1 : TO-18 (5.6mm) (|_Top view _) LD CHIP SUB MOUNT PInne @ @ l] Package 2 : 3.8mm Small size |_Top view_) 22F 06-2 03.775~03.8 LD CHIP 93.1201 SUB MOUNT 22.620.05 BLEtO.1 g NE 3 Ke = wl = of x | t | 0.9Max z 3 . : 3-00352005 | 0 : Front view |er Samsung Semiconductor Laser a] Package 3 : Mold type package LD CHIP PD & Sub PIN NEO) 9.4-003 =| How to read the part number - Numbering ., SLD - 650-18 -271X @ @ @ @ Samsung Laser Diode @ Wavelength : 635nm, 650nm, 780nm @ Package type : 18 = TO-18 (8.6mm) 38 = Small package (3.8mm) wx Suffix 'F' <=> Mold type package Optical power 7:2 => 5mW, 3 > 7mW, 8 => 5omW, 9 > SomW Operating Temp : 4 40C, => 80C, @ = 60C, 7 = 70C Pin configuration : 0 = LD anode, PD cathode, common 1 = LD anode, PD anode, common 2 => LD cathode, PD anode, common Suffix : Derivative partser Samsung Semiconductor Laser 1. SLD63518240 1 3 l=] Application : Measuring Instrument pp 9 LD A ppd =) Features 5 [ SLD63518240 ] * Lasing wavelength : Ap = 635nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 56 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure @ Absolute maximum ratings [ Tc = 25 ] Optical output power LD reverse voltage 2 PD reverse voltage 30 Operating temperature -10 ~ +40 Storage temperature - 40 ~ +85 (| Electrical & optical characteristics [ Te = 25C ] Optical output power Threshold current Operating current Operating voltage Monitor current Im Lasing wavelength x nm 6 ff Beam divergence et degree Aol Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism ASer Samsung Semiconductor Laser 2. SLD63518240C 1 3 [| Application : Measuring Instrument pp 9 iD A? pp [=] Features 5 [ SLD63518240C ] * Lasing wavelength : Ap = 635nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power LD reverse voltage 2 PD reverse voltage 30 10 ~ +40 Operating temperature -40 ~ +85 Storage temperature {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength x nm ef Beam divergence 691 degree AOfl Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism ASer Samsung Semiconductor Laser 3. SLD63518240J 1 3 [| Application : Measuring Instrument pp 9 iD A? pp [=] Features 5 [ $LD63518240J ] * Lasing wavelength : Ap = 635nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR PD reverse voltage VR Operating temperature Topr Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xn nm of Beam divergence et degree AO Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism ASer Samsung Semiconductor Laser 4. $LD63518250 1 3 [| Application : Measuring Instrument, Barcode Scanner pp 9 iD A? pp [=] Features 5 [ $LD63518250 J * Lasing wavelength : Ap = 635nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +50 - 40 ~ +85 Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm Of Beam divergence et degree AO Beam angle accuracy A@L AX,AY,AZ Positional accuracy Differential efficiency n Astigmatism ASer Samsung Semiconductor Laser 5. SLD63518260 - Preliminary 1 3 [| Application : Measuring Instrument, Barcode Scanner pp 9 iD A? pp [=] Features 5 [ $LD63518260 ] * Lasing wavelength : Ap = 635nm * Optical output power : Po = SmW (CW) 2 3 : - * Package type : TO-18 [ 5.6 ] Lb rs PD * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure 5 [ $LD635 18262 ] fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 VR 30 PD reverse voltage -10 ~ +60 Operating temperature Topr Storage temperature Tstg - 40 ~ +85 {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith 60 Operating current lop Operating voltage 27 Monitor current Im 0.5 Lasing wavelength x 640 at 10 Beam divergence al 40 degree AOH 2.0 Beam angle accuracy AOL 2.5 Positional accuracy AX,AY,AZ + 60 Differential efficiency n Astigmatism AS - 10 -er Samsung Semiconductor Laser 6. SLD63518350 - Preliminary 1 3 [=] Application : Measuring Instrument pp 9 iD A? pp [=] Features 5 * Lasing wavelength : Ap = 635nm [ SLD63518350 ] * Optical output power : Po = 7mW (CW) 1 3 * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring LD vw PD * High power laser * InGaAIP laser with multi-quantum well structure 2 [ $LD635 18352 ] (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po LD reverse voltage VR PD reverse voltage VR Topr Operating temperature Storage temperature Tstg (] Electrical & optical characteristics [ Tc = 25 ] Optical output power Threshold current Operating current Operating voltage Monitor current Lasing wavelength 10 Beam divergence 40 degree 2.0 Beam angle accuracy 25 Positional accuracy + 60 Differential efficiency n Astigmatism AS nmer Samsung Semiconductor Laser 7. SLD65018250ST 1 3 [@] Application : Barcode Scanner, Pointer LD as pp {| Features 5 [ SLD65018250ST ] * Lasing wavelength : Ap = 650nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +50 -40 ~ +85 Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm 6H Beam divergence al degree AO Beam angle accuracy AOL AXAY,AZ Positional accuracy Differential efficiency n Astigmatism AS pm - 12-er Samsung Semiconductor Laser 8. SLD65038250ST 1 3 [| Application : Barcode Scanner, Pointer pp iD A? pp [=] Features 5 * Lasing wavelength : Ap = 650nm [ SLD65038250ST ] * Optical output power : Po = 5mW (CW) * Package type : Small Package [ 3.8 ] * Built-in photodiode for optical power monitoring * Ultra small package * InGaAIP laser with multi-quantum well structure (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po VR LD reverse voltage 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +50 Storage temperature Tstg - 40 ~ +85 (] Electrical & optical characteristics [ Tc = 25 ] Optical output power Threshold current Operating current Operating voltage Monitor current Lasing wavelength 11 Beam divergence 38 degree + 2.0 Beam angle accuracy + 3.0 Positional accuracy + 60 Differential efficiency n Astigmatism AS Po nm - 18-er Samsung Semiconductor Laser 9. SLD65018260 (| Application : Barcode Scanner, Sensor LD as pp (=| Features 5 [ SLD65018260 ] * Lasing wavelength : Ap = 650nm * Optical output power : Po = SmW (CW) * Package type : TO-18[ 56 ] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure @ Absolute maximum ratings [ Tc = 25 ] Optical output power Po VR 2 LD reverse voltage PD reverse voltage VR 30 Operating temperature Topr -10 ~ +60 -40 ~ +85 Storage temperature Tstg f Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xn nm 6 ff Beam divergence et degree AO Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism AS - 14-er Samsung Semiconductor Laser 10. SLD65018271 1 3 =] Application : DVD-P, DVD-R pp i 7 pp {| Features > [ SLD65018271 J] * Lasing wavelength : Ap = 650nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiodes for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 Storage temperature Tstg - 40 ~ +85 {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm of Beam divergence et degree AO Beam angle accuracy A@L AX,AY,AZ Positional accuracy Differential efficiency n Astigmatism AS um - 15 -er Samsung Semiconductor Laser 11. SLD65018271L =] Application : DVD-P, DVD-R iu 7 po {| Features 3 [ SLD65018271L ] * Lasing wavelength : Ap = 650nm * Optical output power : Po = SmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiodes for optical power monitoring * InGaAIP laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR PD reverse voltage VR Operating temperature Topr Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm Of Beam divergence et degree AO Beam angle accuracy A@L AX,AY,AZ Positional accuracy Differential efficiency n Astigmatism AS um - 14-er Samsung Semiconductor Laser 12. SLD65018271M 1 3 =] Application : DVD-P, DVD-R pp i Vp {| Features > * Lasing wavelength : Ap = 650nm [ SLD65018271M ] * Optical output power : Po = 5mW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiodes for optical power monitoring * Multi-mode laser * InGaAIP laser with multi-quantum well structure (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po VR LD reverse voltage 2 PD reverse voltage VR 30 aq|}/<j< Topr -10 ~ +70 Operating temperature - 40 ~ +85 Tstg Storage temperature (] Electrical & optical characteristics [ Tc = 25 ] Optical output power Threshold current Operating current Operating voltage Monitor current Lasing wavelength Beam divergence degree Beam angle accuracy Positional accuracy Differential efficiency n Astigmatism As Po pm -7-er Samsung Semiconductor Laser 13. SLD65018371 1 3 @] Application : DVD-Combo, Industrial barcode scanner iu 7 po [=] Features 3 * Lasing wavelength : Ap = 650nm [ SLD65018371 ] * Optical output power : Po = 7mW (CW) 1 3 * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring i 7% &pp * High power laser * InGaAIP laser with multi-quantum well structure 2 [ $LD65018372 ] (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 Storage temperature Tstg - 40 ~ +85 (] Electrical & optical characteristics [ Tc = 25 ] Optical output power Threshold current Operating current Operating voltage Monitor current Lasing wavelength Beam divergence degree Beam angle accuracy Positional accuracy Differential efficiency n Astigmatism AS Po 15 nm - 18-er Samsung Semiconductor Laser 14. SLD65018871 - Preliminary 1 3 |] Application : DVD-RW, DVD-RAM pp i ~Ypp {| Features > [ SLD65018871 ] * Lasing wavelength : Ap = 650nm * Optical output power : Po = SOmW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * High power laser fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 -40 ~ +85 Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm Of Beam divergence et degree AO Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism AS - 19 -er Samsung Semiconductor Laser 15. $SLD78018261 @) Application : CD-P, CD-R iw 7 pp (=| Features 5 . [ SLD78018261 ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure | Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 - 40 ~ +85 Storage temperature Tstg (| Electrical & optical characteristics [ Te = 25C ] Optical output power Threshold current Operating current Operating voltage Monitor current Im Lasing wavelength x nm ef Beam divergence et degree Aol Beam angle accuracy AOL Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism AS ?P0 -er Samsung Semiconductor Laser 16. SLD78018261F 1 3 | Application : CD-P i 7 pp =| Features 5 [ SLD78018261F ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : Plastic mold Package * Built-in photodiodes for optical power monitoring * AlGaAs laser with multi-quantum well structure @ Absolute maximum ratings [ Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 - 40 ~ +85 Storage temperature Tstg @) Electrical & optical characteristics [ Te = 25 ] Optical output power Threshold current Operating current Operating voltage Monitor current Im Lasing wavelength x nm of Beam divergence ol degree Aol Beam angle accuracy A@L AXAY,AZ Positional accuracy Differential efficiency n Astigmatism AS um -P1l-er Samsung Semiconductor Laser 17. SLD78018262C 1 3 =] Application : LSU (Laser printer PP ( printer) i 7 App [=] Features > [ $LD78018262C ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po VR 2 LD reverse voltage PD reverse voltage VR 30 Operating temperature Topr -10 ~ +60 Storage temperature Tstg - 40 ~ +85 {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm ef Beam divergence et degree AO Beam angle accuracy A@L Positional accuracy AX,AY,AZ Differential efficiency n Astigmatism AS Pp? -er Samsung Semiconductor Laser 18. SLD78018271D 1 3 @] Application : Disk-man (CD-P pp (DP) i 7 pp [=] Features 3 [ $LD78018271D ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +70 Storage temperature Tstg - 40 ~ +85 {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm of Beam divergence et degree AO Beam angle accuracy A@L AX,AY,AZ Positional accuracy Differential efficiency n Astigmatism AS um P3 -er Samsung Semiconductor Laser 19. SLD78018360P 1 3 1 3 =] Application : LSU (Laser printer pp ( Printer) LD A / pp i 7 pp [=] Features 2 2 [ SLD78018360P ] [ SLD78018361P ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = SmW (CW) ! 3 * Package type : TO-18 [ 5.6 ] Lb rr PD * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure 2 [ $LD78018362P ] fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 Operating temperature Topr -10 ~ +60 -40 ~ +85 Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength x 6H Beam divergence 6L degree AOH 2.0 Beam angle accuracy A@L 2.5 Positional accuracy AX,AY,AZ + 60 Differential efficiency 0.6 mWimA n (Pmax-Pmin) x 100 Pmin 100Hz pulse rate Astigmatism at 9 &.1 duty cycle um aa ae tea p4 -er Samsung Semiconductor Laser 20. SLD78018371 1 3 @] Application : CD-R, CD-P i 7 pp {| Features 5 * Lasing wavelength : Ap = 780nm [ $LD78018371 ] * Optical output power : Po = 7mW (CW) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * High power laser * AlGaAs laser with multi-quantum well structure (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po LD reverse voltage VR 2 PD reverse voltage VR 30 -10 ~ +70 Topr Operating temperature Storage temperature Tstg - 40 ~ +85 (] Electrical & optical characteristics [ Tc = 25 ] Optical output power Po Ith Threshold current Operating current lop Operating voltage Im Monitor current Lasing wavelength Xr nm of 14 Beam divergence 61 45 degree AO + 1.5 Beam angle accuracy AOL + 3.0 Positional accuracy AX,AY,AZ + 60 Differential efficiency n Astigmatism AS Po nm P5 -er Samsung Semiconductor Laser 21. SLD78018971 - Preliminary 1 3 @] Application : CD-RW i 7 pp {| Features 5 [ SLD78018971 J] * Lasing wavelength : Ap = 785nm * Optical output power : Po = 100mW (CVV), Po = 220mW (Pulse) * Package type : TO-18 [ 5.6 ] * Built-in photodiode for optical power monitoring * High power laser fa] Absolute maximum ratings [Tc = 25 ] Optical output power Po 100 mw LD reverse voltage VR 2 Vv PD reverse voltage VR 30 Vv -10 ~ +65 (C' y Operating temperature Topr (Cw) C -10 ~ +70 (Pulse) Storage temperature Tstg - 40 ~ +85 c {] Electrical & optical characteristics [ Te = 25C ] Optical output power Po Threshold current Ith Operating current lop Operating voltage Monitor current Im Lasing wavelength Xx nm 6 ff Beam divergence et degree AO 2.0 Beam angle accuracy AOL 2.5 Positional accuracy AX,AY,AZ + 60 Differential efficiency n Astigmatism AS PB -er Samsung Semiconductor Laser 22. 2 Beam Laser - Preliminary [@] Application : DVD-P, DVD-R {| Features * Lasing wavelength : Ap = 650nm (DVD), 780nm (CD) * Optical output power : Po = SmW (650nm), 7mW (780nm) * Package type : TO-18 [ 5.6 J], 4 Pin * Built-in photodiode for optical power monitoring * 1 Chip 2 Beam laser : Monolithic (] Absolute maximum ratings [ Tc = 25 ] Optical output power Po 7(650nm), 10(780nm) LD reverse voltage VR 2 PD reverse voltage VR 30 ay;<j< -10 ~ +70 Operating temperature Topr - 40 ~ +85 Storage temperature Tstg {] Electrical & optical characteristics [ Te = 25C ] Optical output power Threshold current Operating current Operating voltage Monitor current Lasing wavelength of Beam divergence 8L degree Aol Beam angle accuracy AGL Positional accuracy AX,AY, AZ Beam Tolerance Differential efficiency y Astigmatism AS hm Pf -er Samsung Semiconductor Laser im] Packing rooeATRAYstst=iti~=~s~*~SS~C*SY r > Tray | [LOT No. example) j 305-1: : cocooceccn cD ooooDae a | oococ0cc0000000a0000 || J 48mm jroo ' cocoocecoocoDoononne _ /' ot | . o4 o. SLD65018371 | :t | LOT : 305-1 | ' | la , j > INSIDE BOX > OUTSIDE BOX i ; | 166mm 362mm | | | LASER DIODE 240mm | 1000EA/TRAY j LASER DIODE | S000EA/INSIDE BOX 336mm 266mm {2 INSIDE BOXES/OUTSIDE BOX j COOOEAOUTSIDE BOX | 350mm : | =! Labeling ESD warning label > Top view > Side view Side view _ ao Semco P/N Customer P/N Production lot number PB -