2007-04-201
BCP51...-BCP53...
123
4
PNP Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP54 ... BCP56 (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP51
BCP51-16
BCP52-16
BCP53-10
BCP53-16
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as type-name
1Pb-containing package may be available upon special request
2007-04-202
BCP51...-BCP53...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCP51
BCP52
BCP53
VCEO
45
60
80
V
Collector-emitter voltage
BCP51
BCP52
BCP53
VCER
45
60
100
Collector-base voltage
BCP51
BCP52
BCP53
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 124°C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-203
BCP51...-BCP53...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP51
IC = 10 mA, IB = 0 , BCP52
IC = 10 mA, IB = 0 , BCP53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP51
IC = 100 µA, IE = 0 , BCP52
IC = 100 µA, IE = 0 , BCP53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP51
IC = 150 mA, VCE = 2 V, BCP53-10
IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz fT- 125 - MHz
1Pulse test: t < 300µs; D < 2%
2007-04-204
BCP51...-BCP53...
DC current gain hFE = ƒ(IC)
VCE = 2 V
10
EHP00261BCP 51...53
04
10mA
0
10
3
10
5
5
101102
101
C
FE
h
Ι
3
10
2
10
C
100
5
25
C
-50
C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00264BCP 51...53
CEsat
V
0.4 V 0.8
0
101
102
4
10
5
5
Ι
CmA
5
3
10
0.2 0.6
C
100
25
C
C
-50
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00263BCP 51...53
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
0
10
EHP00262BCP 51...53
A
T
150
-1
4
10
Ι
CBO
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
2007-04-205
BCP51...-BCP53...
Transition frequency fT = ƒ(IC)
VCE = 10 V
10
EHP00260BCP 51...53
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00265BCP 51...53
-6 -5
10 0
10s
0
10
2
10
5
5
10-4 10-3 10-2
101
5
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
2007-04-206
BCP51...-BCP53...
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2007-04-207
BCP51...-BCP53...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
