BC857BV
Document number: DS30433 Rev. 5 - 2 1 of 4
www.diodes.com April 2009
© Diodes Incorporated
BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Complementary PNP Type Available (BC847BV)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Notes 5 and 6)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.003 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2) PD 150 mW
Thermal Resistance, Junction to Ambient (Note 2) R
JA 833 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 4) V
BR
CBO -50 — — V IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage (Note 4) V
BR
CEO -45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 4) V
BR
EBO -5 — — V IE = 1μA, IC = 0
DC Current Gain (Note 4) hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) — —
— -100
-400 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 4) VBE(SAT) —
— -700
-900 —
— mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 4) VBE(ON) -600
— —
— -750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 4) ICBO —
— —
— -15
-4.0 nA
µA VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz
Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Bottom View Device Schematic (Note 1)
C
1
B
2
E
2
C
2
E
1
B
1