TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm * Low drain-source ON resistance: RDS (ON) = 38 m (typ.) * High forward transfer admittance: |Yfs| = 5.4 S (typ.) * Low leakage current: IDSS = 10 A (max) (VDS = 20 V) * Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 k) VDGR 20 V Gate-source voltage VGSS 12 V Drain current DC (Note 1) ID 3 Pulse (Note 1) IDP 12 PD (1) 1.35 PD (2) 1.12 Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) A W PD (1) 0.53 PD (2) 0.33 JEDEC JEITA TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Circuit Configuration EAS 1.46 mJ Avalanche current IAR 1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 8 7 6 5 1 2 3 4 Marking (Note 6) 8 5 F4A 1 1 4 2003-11-10 TPCF8201 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Unit C/W Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 1.5 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking "" locates on the left lower side of parts number marking "F4A" indicates terminal No. 1. 2 2003-11-10 TPCF8201 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Symbol IGSS Test Condition VGS = 10 V, VDS = 0 V Min Typ. Max Unit 10 A A IDSS VDS = 20 V, VGS = 0 V 10 V (BR) DSS ID = 10 mA, VGS = 0 V 20 V (BR) DSX ID = 10 mA, VGS = -12 V 8 Vth VDS = 10 V, ID = 200 A 0.5 1.2 RDS (ON) VGS = 2.0 V, ID = 1.5 A 62 100 RDS (ON) VGS = 2.5 V, ID = 1.5 A 50 66 RDS (ON) VGS = 4.5 V, ID = 1.5 A 38 49 Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.5 A 2.7 5.4 Input capacitance Ciss 590 Reverse transfer capacitance Crss 70 Output capacitance Coss 85 3.0 7.5 Gate threshold voltage Drain-source ON resistance Rise time Turn-on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz VGS ton Switching time Fall time ID = 1.5 A 5V 0V RL = 0.67 Drain-source breakdown voltage 4.7 Drain cut-off current tf V V m S pF ns 4.4 26 7.5 1.3 2.1 VDD - 10 V Turn-off time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge1 Qgs1 Gate-drain ("miller") charge Qgd Duty < = 1%, tw = 10 s VDD - 16 V, VGS = 5 V, ID = 3.0 A nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 12 A -1.2 V VDSF IDR = 3.0 A, VGS = 0 V 3 2003-11-10 TPCF8201 ID - VDS ID - VDS 10 5 4 6 2 1.9 5 (A) 8 ID 1.8 3 1.7 2 Drain current ID Common source Ta = 25C Pulse test 3 2.1 Pulse test 4 Drain current 10 Common source Ta = 25C 1.6 1.5 1 2 (A) 10 6 1.9 4 1.8 1.7 2 1.6 1.5 VGS = 1.4 V 0 0 0.4 0.2 0.6 0.8 Drain-source voltage VDS VGS = 1.4V 0 0 1 1 (V) 3 2 Drain-source voltage VDS ID - VGS Common source (V) VDS = 10 V 8 100 Drain-source voltage VDS ID Drain current (A) Pulse test 2 Ta = -55C Ta = 25 0.8 1 Pulse test 0.6 0.4 1.5 0.2 25 0 0 2 3 4 VGS 0 0 5 (V) 2 4 6 Gate-source voltage Yfs - ID 8 VGS 10 (V) RDS (ON) - ID 100 1000 Common source Common source VDS = 10 V Ta = 25C Pulse test Pulse test Drain-source ON resistance RDS (ON) (m) Forward transfer admittance Yfs (S) ID = 3 A 0.75 Gate-source voltage Ta = -55C 10 25 100 1 0.1 (V) VDS - VGS Common source 4 5 1 10 6 4 1 Drain current ID (A) VGS = 4.5V 2.5 10 1 0.1 10 2.0 100 1 Drain current 4 10 ID (A) 2003-11-10 TPCF8201 RDS (ON) - Ta IDR - VDS 120 10 10 VGS = 2.0 V ID = 1.5A,0.75A 80 ID = 3A 60 VGS = 2.5 V ID = 3A,1.5A,0.75A 40 20 ID = 3A,1.5A,0.75A VGS = 4.5 V 2.0 3 IDR 100 5 (A) Pulse test Drain reverse current Drain-source ON resistance RDS (ON) (m ) Common source 2.5 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0 -80 -40 0 40 80 120 0.1 0 160 Ambient temperature Ta (C) -0.8 -0.4 Drain-source voltage VDS 1.2 1 C Gate threshold voltage Vth (V) (pF) Ciss Coss 100 Crss Common source VGS = 0 V f = 1 MHz 0.8 0.6 0.4 Common source VDS = 10 V 0.2 ID = 200A Pulse test Ta = 25C 10 0.1 1 3 5 10 Drain-source voltage VDS 30 50 0 -80 100 (V) -40 0 40 80 120 160 Ambient temperature Ta (C) Dynamic input / output characteristics PD - Ta 20 t=5s Device mounted on a glass-epoxy board (a) (Note 2a) 6 (3)Single-device operation (Note 3a) (1) (4)Single-device value at dual operation (Note 3b) 1.2 (2) 0.8 (3) 0.4 (4) 16 4 VDS VGS Device mounted on a glass-epoxy board (b) (Note 2b) Drain-source voltage VDS Drain power dissipation PD (W) (V) (2)Single-device value at dual operation (Note 3b) 1.6 (V) (1)Single-device operation (Note 3a) 8 VDD = 16 V 12 4 VGS 8 Common source 2 ID = 3 A 4 Ta = 25C Gate-source voltage Capacitance (V) Vth - Ta Capacitance - VDS 1000 2 -1.2 Pulse test 0 0 40 80 120 0 0 160 Ambient temperature Ta (C) 2 4 Total gate charge 5 6 8 0 10 Qg (nC) 2003-11-10 TPCF8201 rth - tw 1000 Transient thermal impedance rth (C/W) (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 Pulse width 10 tw 100 1000 (s) Safe operating Area ID max (pulse)* 10 1 ms* Drain current ID (A) 100 10 ms* 1 *: Single pulse Ta=25 Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 6 2003-11-10 TPCF8201 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-11-10