TOSHIBA 3SK225 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK225 TV TUNER, VHF RF AMPLIFIER APPLICATIONS. Unit in mm FM TUNER APPLICATIONS. Ton TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 29-03 e Superior Cross Modulation Performance. 2 d Low Noise Figure : NF=2.0dB (Typ.) a ot MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT 150-015 . Drain-Source Voltage VpDs 13.5 Vv 33 tn 3 ow Gate 1-Source Voltage VGis +8 Vv g S - oI gs Gate 2-Source Voltage Vq2s +8 Vv -o 3 . 4 Drain Current Ip 30 mA sg 3 Drain Power Dissipation Pp 150 mW 1. GATE1 & 5 2, GATE2 Channel Temperature Toh 125 Cc 3. DRAIN Storage Temperature Range Tstg 55~125 C 4. SOURCE Marking SMQ obO6g JEDEC _ UT EIAJ H al TOSHIBA 2-3J1A Weight : 0.013g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate 1 Leakage Current Igiss [Vps=90, Vaig=+6V, Vaeg=0} | +50] nA Gate 2 Leakage Current Iagass |Vps=0, Vais=0, Vaag=+t6V] | +50] nA . Vois=4V, Vqos=--4v, Drain-Source Voltage V (BR) DSX Ip= 100A 13.5 | Vv . Vps=6V, Va1s=0, Drain Current Ipss Vqag=4.5V Oo; 0.1 | mA Gate 1-Source Cut-off Vps=6V, Vags=4.5V, Voltage VG1S (OFF) Ip=100 nA Oo; 10} V Gate 2-Source Cut-off Vps=6V, Vais=4V, Voltage VG2s (OFF) [y= 100A 0.5] 1.0) 15] V : Vps=8V, Vaog=4.5V, Forward Transfer Admittance] [Yg| Ip=10mA, f=1kHz 21) ms Input Capacitance Cisg Vps=6V, Voes=4.5V, 3.4] 4.4] pF Reverse Transfer Capacitance | Cregg Ip=10mA, f=1MHz | 0.020] 0.05 | pF Power Gain Gps Vps=6V, Vaeg=4.5V, 19 22) dB Noise Figure NF Ip=10mA, f=500MHz (Fig.1) 2.0| 3.5 | dB 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 846 TOSHIBA 3SK225 INPUT OUTPUT Rg=500, SHIELD Ry, =500, Cc L2 1~20pF RFC 1 CASE 1000pF fy a Qo QoQ oOo = Ll L4: 0.8mm SILVER PLATED COPPER WIRE C : AIR TRIMMER TTA25A200A (MURATA MFG. Co., Ltd.) RFC 1: 0.35mm COPPER WIRE 3mm ID, 7T RFC 2: 0.35mm COPPER WIRE 3mm ID, 10T Fig.1 500MHz, Gps, NF TEST CIRCUIT Ip - Vps Ip Vps COMMON SOURCE COMMON SOURCE 40 Vois=4 VG2ga5V ~ re 85c > Ta =25C 3 < < & & Vois=4.5v 3.0 8 8 e a 5 5 s s > > oD oD q a s s a a ol 0 2 4 6 8 10 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE Vpg (Vv) DRAIN-SOURCE VOLTAGE Vpg (Vv) 961001 EAA2" @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 847 TOSHIBA 3SK225 Ip Vqis Ip Vqa2s COMMON SOURCE COMMON SOURCE Vps=6V Vps=6V 2 Ta=25C 2 Ta=25C & & 8 8 e a z z 5 5 5 5 o oD q a s 2 Qa Q =1 0 1 2 3 4 1 2 3 4 5 GATE 1-SOURCE VOLTAGE Vaig (W) GATE 2-SOURCE VOLTAGE Vagg (V) lYts| - Vois Gps, NF - Vps f& S COMMON E SOURCE 5 Vpg=6 2. Ta=25C a 3 22 = ~ Ee s 2 COMMON fe, a 5 SOURCE a Ze o a= x, Vaes=4.5V a Be < Ip=10mA 2 a 3 S E z f=500MHz = 2 9K a) = 15 = Ta=25C a a S 9 EK a 4 -1 0 1 2 3 4 GATE 1-SOURCE VOLTAGE Vayg (V) NF Gps VG2s 0 2 4 6 8 10 20 7 DRAIN-SOURCE VOLTAGE Vpg (WV) ~ 10 Gps, NF - f a S 7 COMMON SOURCE 2 Vpg=6V - 0 a DS oe Z / BIAS CIRCUIT = Va2s=4.5V = 4 a Ip=10mA & S 1 / J YDD e Ta=25C Zz 2 7 = : [es 2 : 5 | I = R=2000, 3 3 cal vr Fae ~20 Fs i} | Vpp=6V (Vpg) +RX10mA = a OQ oS } at Vgeg=4.5V a Zz 80 f=500MHz, Ta =25C -1 0 1 2 3 4 5 50 100 300 1 GATE 2-SOURCE VOLTAGE Vag (V) FREQUENCY f (MHz) 848 TOSHIBA 3SK225 Yfs f ; FORWARD TRANSFER CONDUCTANCE gr, (mS) Yis f Ro 5 10 15 20 25 20 a COMMON SOURCE | ~ z Vps=6V g a 5| Vagg=4.5V ~ a Ip=10mA F B Ta =25C Tam a Ze ~ 10 2 a 4 a a 2 a a g= 15 ZR a & a a COMMON SOURCE 20 Le. > Vpg=6V ot 09 & Vo2s=4.5V 2 f=1GHz Ip=10mA _95 I I Ta=25C 0 2 4 6 8 10 12 INPUT INDUCTANCE gig (mS) Yrs f REVERSE TRANSFER CONDUCTANCE grg (mS) BQ 0.05 0 0.05 0.1 0.15 0.2 & 02 a COMMON SOURCE 2 Vpg=6V : & 0.15] Vgas=45V , Z Ip=10mA f=1GHz 2 < Oj Pp a Ta=25C ] f A, ZA oD = ol 5. wn Y9 < B A Be ee Y 8 = 0.05 / 2 mE fo 0.8 5 COMMON SOURCE Zz / a S Lo 5 veces B 0 0.1 106 , B Vaag=45V @ | ons 0.5 1 2 Ip=10mA Ta=25 > 0.05 |_ 9.3 04 | = a -05 O58 1 15 #2 25 38 Pp Ta OUTPUT CONDUCTANCE gyg (mS) DRAIN POWER DISSIPATION Pp (mW) 0 25 50 15 100 125 150 AMBIENT TEMPERATURE Ta (C) 849