SIEMENS Silicon Variable Capacitance Diode @ For FM tuners @ Monolithic chip with common cathode for perfect tracking of both diodes @ Uniform "square law" characteristics @ Ideal Hifi tuning device when used in low-distortion, back-to-back BB 804 configuration | VPS05161 Type Ordering Code | Pin Marking Package (tape and reel) | Configuration BB 804 Q62702-B372 SF (see SOT-23 3 Characteristics bplig 2 for marking of capacitance EHAN7004 subgroups) Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Ve 18 Vv Peak reverse voltage Vem 20 Forward current, Tas 60 C Ie 50 mA Operating temperature Top 100 Cc Storage temperature range Tag 65... + 150 Thermal Resistance Junction - ambient Rin sa s 600 K/AV Semiconductor Group 420 10.94 SIEMENS BB 804 Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol! Values Unit min. typ. max. Reverse current Tn nA Va=16V - - 20 Va= 16 V, Ta= 60C - - 200 Diode capacitance cr 42 - 475 pF Va= 2V, f= 1 MHz Capacitance ratio Cr 1.65 1.71 - - Va=2V,8V, f= 1 MHz Crs Series resistance rs - 0.18 - Q Va= 2V, f= 100 MHz Q factor Q ~ 200 - ~ Va= 2V, f= 100 MHz Temperature coefficient of TCc - 330 - ppm/K diode capacitance Va=2V, f=1 MHz Diode capacitance) Cr pF Va=2V, f=1MHz Subgroups: 0 42 - 43.5 1 43 - 44.5 2 44 - 45.5 3 45 - 46.5 4 46 - 47.5 1). The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. Semiconductor Group 421 SIEMENS BB 804 Diode capacitance Cr = f (Vr) per diode, f= 1 MHz 80 H007050 pF 70 | 60 50 40 30 20 10 0 197! 10 10' =v 10? Temperature coefficient TCc = f (Va) per diode, f= 1 MHz EHOO7052 1075 1c, + | 1074 1075 107 10 io!) Vp 10? Semiconductor Group 422 T | Capacitance ratio Cret / Cr= f (Va) per diode; Vie = 1V, 2 V, f= 1 MHz 7 3 EHDO7051 raf t 2