BC635/637/639 BC635/637/639 Switching and Amplifier Applications * Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCER VCES VCEO Parameter Collector-Emitter Voltage at RBE=1K : BC635 : BC637 : BC639 Value Units 45 60 100 V V V : BC635 : BC637 : BC639 45 60 100 V V V : BC635 : BC637 : BC639 45 60 80 V V V V Collector-Emitter Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 IC Collector Current 1 A ICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Power Dissipation TJ TSTG 1 W Junction Temperature 150 C Storage Temperature -65 ~ 150 C * PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 Test Condition IC=10mA, IB=0 ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 A IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 A hFE1 hFE2 DC Current Gain VCE=2V, IC=5mA VCE=2V, IC=150mA hFE3 : All : BC635 : BC637/BC639 : All Min. Typ. Max. 45 60 80 VCE=2V, IC=500mA V V V 25 40 40 25 250 160 VCE(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.5 VBE(on) Base-Emitter On Voltage VCE=2V, IC=500mA 1 fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz (c)2002 Fairchild Semiconductor Corporation Units 100 V V MHz Rev. B2, December 2002 BC635/637/639 Typical Characteristics 200 1000 VCE = 2V IB = 1.6 mA 160 IB = 1.4 mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = 1.8 mA IB = 1.2 mA 120 IB = 1.0 mA IB = 0.8 mA 80 IB = 0.6 mA 40 IB = 0.4 mA 100 IB = 0.2 mA 0 10 0 10 20 30 40 50 1 10 1000 IC[mA], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 V BE(sat) 1 0.1 V CE(sat) 0.01 1 10 100 1000 VCE = 2V 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob[pF], CAPACITANCE f=1MHz 10 1 1 10 100 V CB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/639 Package Dimensions TO-92 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1