APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 49
ID Continuous Drain Current Tc = 80°C 38
IDM Pulsed Drain current 130
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 45 mΩ
PD Maximum Power Dissipation Tc = 25°C 250 W
IAR Avalanche current (repetitive and non repetitive) 15 A
EAR Repetitive Avalanche Energy 3
EAS Single Pulse Avalanche Energy 1900 mJ
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Dual buck chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 49A @ Tc = 25°C
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 24.5A 40 45 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 7.2
Coss Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz 8.5 nF
Qg Total gate Charge 150
Qgs Gate – Source Charge 34
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 49A 51
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 100
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5Ω 45
ns
Eon Turn-on Switching Energy 405
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω 520
µJ
Eon Turn-on Switching Energy 658
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω 635 µJ
Chopper SiC diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100 400
IRM Maximum Reverse Leakage Current VR=600V Tj = 175°C 200 2000 µA
IF DC Forward Current Tc = 100°C 20 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 20A Tj = 175°C 2 2.4 V
QC Total Capacitive Charge IF = 20A, VR = 300V
di/dt =1800A/µs 28 nC
f = 1MHz, VR = 200V 130
C Total Capacitance f = 1MHz, VR = 400V 100 pF
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS 0.5
RthJC Junction to Case Thermal Resistance SiC Diode 1.5
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 80 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Durati o n (S econ ds)
Thermal Impedance (°C/W)
Maxi mum Effective Transient Thermal Im ped an ce, Ju ncti o n to Case vs Pul se Durati on
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
240
280
320
360
0 5 10 15 20 25
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=15&10V
Low Vo ltage Output Characteristics Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
140
01234567
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0 20 40 60 80 100 120 140
I
D
, Drain Curren t (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 50A
0
10
20
30
40
50
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltag e vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Norm alized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 50A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximu m Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited b
y
R
DS
on
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to S o u rce Vo ltag e (V)
C, Capacitance (pF)
Capacitance vs Drain to Sou rce V ol tag e
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0 20 40 60 80 100 120 140 160
Gate Charge (nC)
VGS, Gate to Source Vol tag e (V )
Gate Charge vs Gate to Source Voltage
ID=50A
TJ=25°C
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
SD
, Source to Drain V o ltag e (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0 1020304050607080
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=400V
R
G
=5Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
60
70
0 1020304050607080
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=400V
R
G
=5Ω
T
J
=125°C
L=100µH
Switchi n g E nerg y vs Current
E
on
E
off
0
0.4
0.8
1.2
1.6
0 1020304050607080
I
D
, Drain Current (A)
Switchi n g Energy (mJ)
V
DS
=400V
R
G
=5Ω
T
J
=125°C
L=100µH
E
on
E
off
0
0.5
1
1.5
2
0 1020304050
Gate Resistance (Ohms)
Switchi ng Energy (mJ)
Switch i n g Energy vs Gate Resistance
V
DS
=400V
I
D
=50A
T
J
=125°C
L=100µH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
5 101520253035404550
I
D
, Drain Curren t (A)
Frequency (kHz)
Operating Frequency vs Drain Curren t
V
DS
=400V
D=50%
R
G
=5Ω
T
J
=125°C
T
C
=75°C
APTC60DSKM45CT1G
APTC60DSKM45CT1G – Rev 0 september, 2009
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SiC Typical Performance Curve
Maxi mum Effective Transient Thermal Im ped ance, Ju ncti o n to Case vs Pulse Durati o n
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
10
20
30
40
00.511.522.533.5
V
F
Forward Voltag e (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
250
300
350
400
200 300 400 500 600 700 800
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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