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© 2002
MOS FIELD EFFECT TRANSISTOR
µ
µµ
µ
PA1820
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16274EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
µ
PA1820 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC Converters and power
management of notebook computers and so on.
FEATURES
•2.5 V drive available
•Low on-state resistance
RDS(on)1 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)
RDS(on)3 = 12 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER PACKAGE
µ
PA1820GR-9JG Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±12 V
Drain Current (DC) ID(DC) ±12 A
Drain Current (pulse) Note1 ID(pulse) ±48 A
Total Power Dissipation No te2 PT2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
14
85
6.4 ±0.2
4.4 ±0.1 1.0 ±0.2
0.145
±0.055
0.1
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3°
+5°
–3°
0.6
+0.15
–0.1
1.2 MAX.
0.1±0.05
1.0±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1,2,3 :Source
4 :Gate
5,6,7,8 :Drain
Data Sheet G16274EJ1V0DS
2
µ
µµ
µ
PA1820
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Volt age Drai n Current IDSS VDS = 20 V, VGS = 0 V 1.0
µ
A
Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V
Forward Transfer Adm i t tance | yfs |V
DS = 10 V, ID = 6.0 A 11 21.5 S
Drain to Sourc e On-state Res i stance RDS(on)1 VGS = 4.5 V, ID = 6.0 A6.88.6mΩ
RDS(on)2 VGS = 4.0 V, ID = 6.0 A7.08.8mΩ
RDS(on)3 VGS = 2.5 V, ID = 6.0 A8.712mΩ
Input Capac i t ance Ciss VDS = 10 V 2020 pF
Output Capaci tance Coss VGS = 0 V 600 pF
Reverse Transf er Capacitanc e Crss f = 1.0 MHz 430 pF
Turn-on Delay Time td(on) VDD = 10 V, ID = 6.0 A18ns
Rise Ti me trVGS = 4.0 V56ns
Turn-off Del a y T i me td(off) RG = 10 Ω75 ns
Fall Time tf52 ns
Total Gate Charge QGVDD = 16 V 27 nC
Gate to Source Charge QGS VGS = 4.0 V 2.6 nC
Gate to Drain Charge QGD ID = 12 A13nC
Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V0.81V
Reverse Recovery T i me trr IF = 12 A, VGS = 0 V61ns
Reverse Recovery Charge Qrr di/dt = 100 A /
µ
s40nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1
s
µ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10% 90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet G16274EJ1V0DS 3
µ
µµ
µ
PA1820
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATI NG F ACTOR OF FORWARD BIAS
SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
PT - Total Power Dissipation - W
0
0.5
1
1.5
2
2.5
0 25 50 75 100 125 150 175
Mounted on Ceramic
Substrate of
5000 m m2 x 1.1 mm
Mounted on FR-4 board
of 2500 mm 2 x 1.6 m m
TA - Ambi ent Temperature - °CT
A - Ambi ent Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.01
0.1
1
10
100
0.1 1 10 100
100 ms
10 ms
ID(pulse)
ID
(
DC
)
PW = 1 ms
RDS(on) Limited
(VGS = 4.5 V)
DC
Sing le pulse
M ounted on Ceramic Substrate
of 5000 mm2 x 1.1 mm
VDS - Drain to Source Volt age - V
TRANSIENT THERMAL RESISTANCE vs. PULSE W IDTH
rth(ch−A) - Trans i ent Thermal Res i stance - °C/W
1
10
100
1000
Mounte d on Cera mic
Substra te of 5000 mm2 x 1.1 mm
62.5°C/W
Single puls e Mounte d on FR-4 board
of 2500 mm2 x 1.6 mm
125°C/W
Mounte d on FR-4 board
of 2500 mm2 x 1.6 mm
125°C/W
PW - Pulse W idth - s
1 m 10 m 100 m 1 10 100 1000
Data Sheet G16274EJ1V0DS
4
µ
µµ
µ
PA1820
DRAIN CURRE NT vs.
DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5
Pulsed
2.5 V
4.0 V
VGS =
4.5 V
ID - Drain Current - A
0.0001
0.001
0.01
0.1
1
10
100
0 0.5 1 1.5 2 2.5
VDS = 10 V
Pulsed
TA = 125°C
75°C
25°C
−25°C
VDS - Drain to Source Volt age - V VGS - Gate to S ource Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TE MP ERATURE FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRE NT
VGS(off) - Gat e Cut-off V ol tage - V
0.4
0.6
0.8
1.0
1.2
-50 0 50 100 150
VDS = 10 V
ID = 1.0 mA
| yfs | - Forward Transfer Admi ttance - S
0.1
1
10
100
0.01 0.1 1 10 100
VDS = 10 V
Pulsed
TA = −25°C
25°C
75°C
125°C
Tch - Channel Temperat ure - °CI
D - Drain Current - A
DRAIN TO S O URCE ON-STA T E RESI STANCE vs.
CHANNEL TEMPERA T URE DRAIN TO SOURCE ON-ST ATE RE S ISTA NCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
-50 0 50 100 150
ID = 6.0 A
Pulsed
4.5 V
VGS = 2.5 V
4.0 V
0
5
10
15
20
0246810
ID = 6.0 A
Pulsed
RDS(on) - Drain to Source On-state Resistance - mΩ
Tch - Channel Temperat ure - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS - Gate to Sourc e Voltage - V
Data Sheet G16274EJ1V0DS 5
µ
µµ
µ
PA1820
DRAIN TO SOURCE ON-STATE
RESI STANCE vs. DRAIN CURRENT CAPA CITANCE vs.
DRAIN TO S O URCE VOLTA G E
0
5
10
15
20
0.01 0.1 1 10 100
4.5 V
VGS = 2.5 V
4.0 V
ID = 6.0 A
Pulsed
100
1000
10000
0.1 1 10 100
VGS = 0 V
f= 1.0 MH z
Ciss
Coss
Crss
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
C iss , C oss, C rss - Capacitance - pF
VDS - Drain to Source Volt age - V
SWI T CHING CHARACTERIST ICS SOURCE TO DRAIN DIODE
FORWA RD V O LT AGE
td(on), tr, td(off), tf - Switching Time - ns
10
100
1000
0.1 1 10 100
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
td(off)
td(on)
tf
tr
IF - Diode Forward Current - A
0.01
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
VGS = 0 V
Pulsed
ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V
DYNAMIC I NPUT/OUTPUT CHARA CT ERIST ICS
VGS - Gate to Sourc e Voltage - V
0
1
2
3
4
5
0 5 10 15 20 25 30 35
ID = 12 A
VDD = 4.0 V
10 V
16 V
QG - Gate Charge - nC
µ
µµ
µ
PA1820
M8E 00. 4
The information in this document is current as of October, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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