IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 1
Rev. 0A1
10/30/2017
512Kx16 HIGH SPEED AYNCHRONOUS
CMOS STATIC RAM with ECC
KEY FEATURES
High-speed access time: 8ns, 10ns, 20ns
Single power supply
– 1.65V-2.2V VDD (IS61WV51216EEALL)
– 2.4V-3.6V VDD (IS61/64WV51216EEBLL)
Error Detection and Correction with optional
ERR1/ERR2 output pin:
- ERR1 pin indicates 1-bit error detection and
correction.
- ERR2 pin indicates 2-bit error detection
Package Available:
- 44-pin TSOP (Type II)
- 48-pin TSOP (Type I)
- 48-ball mini BGA (6mm x 8mm)
- 54 pin TSOP (Type II)
Three state outputs
Industrial and Automotive temperature support
Lead-free available
FUNCTIONAL BLOCK DIAGRAM
COLUMN I/O
WE#
UB#
OE#
LB#
CONTROL
CIRCUIT
I/O
DATA
CIRCUIT
DECODER
VDD
VSS
A0 – A18
I/O0 – I/O7
I/O8 – I/O15
Memory
Upper IO
Array
512Kx8
ECC
Array
512Kx5
Column I/O
8 5 8 5
ECC
Array
512Kx5
ECC
ECC
8
8
13
13
Memory
Lower IO
Array
512Kx8
ERR1
ERR2
CS# or
CS1#/CS2
DESCRIPTION
The ISSI IS61/64WV51216EEALL/BLL are high-speed, low
power, 16M bit static RAMs organized as 512K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology and implemented ECC function to improve
reliability.
This highly reliable process coupled with innovative circuit
design techniques including ECC (SEC-DED: Single Error
Correcting-Double Error Detecting) yield high-performance
and highly reliable devices.
When CS# is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE#) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB#) and Lower Byte (LB#)
access.
The devices are packaged in the JEDEC standard 44-pin
TSOP (TYPE II), 48-pin mini BGA (6mm x 8mm), 48-pin
TSOP (TYPE I), and 54-pin TSOP (TYPE II)
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
PRELIMINARY INFORMATION
OCTOBER 2017
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 2
Rev. 0A1
10/30/2017
PIN CONFIGURATIONS
48-Pin mini BGA(6mm x 8mm)
LB# A0OE# A1 A2 NC
I/O8 A3UB# A4 CS# I/O0
I/O9 A5I/O10 A6 I/O1 I/O2
VSS A17I/O11 A7 I/O3 VDD
VDD NCI/O12 A16 I/O4 VSS
I/O14 A14I/O13 A15 I/O5 I/O6
I/O15 A12NC A13 WE#I/O7
A18 A9A8 A10 A11 NC
1 2 3 4 5 6
A
B
C
D
E
F
G
H
48-Pin mini BGA (6mm x 8mm), ERR1/2
A
B
C
D
E
F
G
H
LB# A0OE# A1 A2 NC
I/O8 A3UB# A4 CS# I/O0
I/O9 A5I/O10 A6 I/O1 I/O2
VSS A17I/O11 A7 I/O3 VDD
VDD ERR1I/O12 A16 I/O4 VSS
I/O14 A14I/O13 A15 I/O5 I/O6
I/O15 A12ERR2 A13 WE#I/O7
A18 A9A8 A10 A11 NC
1 2 3 4 5 6
44-Pin TSOP-II
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
I/O2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE#
A5
A6
A7
A8
A9
A17
A16
A15
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
VDD
VSS
I/O11
I/O10
I/O9
I/O8
A18
A14
A13
A12
A11
A10
1
2
3
4
5
6
7
8
9
10
12
11
13
14
15
16
32
31
30
29
28
27
26
25
24
23
21
22
20
19
18
17
42
41
40
39
38
37
36
35
34
33
44
43
48-Pin TSOP-I, ERR1/ERR2
A2
A3
A4
ERR1
CS#
I/O0
I/O1
I/O2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE#
A5
A6
A7
A8
A9
A15
NC
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
VDD
VSS
I/O11
I/O10
I/O9
I/O8
A18
A14
A13
A12
A11
A10
3
4
5
6
7
8
9
10
11
12
14
13
15
16
17
18
34
33
32
31
30
29
28
27
26
25
23
24
22
21
20
19
44
43
42
41
40
39
38
37
36
35
45
A0
A1
A17
A16
1
2
48
47
46
ERR2
NC
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 3
Rev. 0A1
10/30/2017
54-Pin TSOP-II
I/O13
I/O14
VSS
I/O15
A4
A3
A2
A1
A0
UB#
CS1#
VDD
WE#
CS2
NC
A18
A16
A15
I/O0
VDD
I/O1
I/O10
I/O9
VDD
I/O8
A5
A6
A7
A8
A9
OE#
NC
VSS
NC
LB#
A10
A12
A13
A14
I/O7
VSS
I/O6
3
4
5
6
7
8
9
10
11
12
14
13
15
16
17
18
40
39
38
37
36
35
34
33
32
31
23
24
22
21
20
19
50
49
48
47
46
45
44
43
42
41
51
I/O12
VDD
I/O11
VSS
1
2
54
53
52
A17
A11
I/O2
VSS
I/O3
I/O5
VDD
I/O4
30
29
28
26
27
25
PIN DESCRIPTIONS
A0-A18
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CS# or
CS1#/CS2
Chip Enable Input
OE#
Output Enable Input
WE#
Write Enable Input
LB#
Lower-byte Control (I/O0-I/O7)
UB#
Upper-byte Control (I/O8-I/O15)
ERR1
1-bit Error Detection and Correction
Signal
ERR2
2-bit ERR Detection Signal
NC
No Connection
VDD
Power
VSS
Ground
54-Pin TSOP-II, ERR1/ERR2
I/O13
I/O14
VSS
I/O15
A4
A3
A2
A1
A0
UB#
CS1#
VDD
WE#
CS2
NC
A18
A16
A15
I/O0
VDD
I/O1
I/O10
I/O9
VDD
I/O8
A5
A6
A7
A8
A9
OE#
ERR1
VSS
ERR2
LB#
A10
A12
A13
A14
I/O7
VSS
I/O6
3
4
5
6
7
8
9
10
11
12
14
13
15
16
17
18
40
39
38
37
36
35
34
33
32
31
23
24
22
21
20
19
50
49
48
47
46
45
44
43
42
41
51
I/O12
VDD
I/O11
VSS
1
2
54
53
52
A17
A11
I/O2
VSS
I/O3
I/O5
VDD
I/O4
30
29
28
26
27
25
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 4
Rev. 0A1
10/30/2017
FUNCTION DESCRIPTION
SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM
has three different modes supported. Each function is described below with Truth Table.
STANDBY MODE
Device enters standby mode when deselected (CS# HIGH). The input and output pins (I/O0-15) are placed in a high
impedance state. CMOS input in this mode will maximize saving power.
WRITE MODE
Write operation issues with Chip selected (CS#) and Write Enable (WE#) input LOW. The input and output pins (I/O0-
15) are in data input mode. Output buffers are closed during this time even if OE# is LOW. UB# and LB# enables a
byte write feature. By enabling LB# LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified
on the address pins. And with UB# being LOW, data from I/O pins (I/O8 through I/O15) are written into the location.
READ MODE
Read operation issues with Chip selected (CS# LOW) and Write Enable (WE#) input HIGH. When OE# is LOW, output
buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. UB# and LB# enables a
byte read feature. By enabling LB# LOW, data from memory appears on I/O0-7. And with UB# being LOW, data from
memory appears on I/O8-15.
In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as
READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used.
ERROR DETECTION AND ERROR CORRECTION
Independent ECC per each byte
- detect and correct 1-bit error per byte or detect multi-bit error per byte
Optional ERR1 output signal indicates 1-bit error detection and correction
Optional ERR2 output signal indicates multi-bit error detection.
Controller can use either ERR1 or ERR2 to monitor ECC event. Unused pins (ERR1 or ERR2) can be left
floating.
Better reliability than parity code schemes which can only detect an error but not correct an error
Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
ERR1, ERR2 OUTPUT SIGNAL BEHAVIOR
ERR1
ERR2
DQ pin
Status
Remark
0
0
Valid Q
No Error
1
0
Valid Q
1-Bit Error only
1-bit error per byte detected and corrected
0
1
In-Valid Q
Multi-Bit Error
only
No 1-bit error. Multi-bit error per byte detected (out of 2 bytes)
1
1
In-Valid Q
1-bit & Multi-bit
error
1-bit error detected and corrected at one byte, and multi-bit error detected at another
byte.
High-Z
High-Z
Valid D
Non-Read
Write operation or Output Disabled
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 5
Rev. 0A1
10/30/2017
TRUTH TABLE
Mode
CS#
WE#
OE#
LB#
UB#
I/O0-I/O7
I/O8-I/O15
VDD Current
Not Selected
H
X
X
X
X
High-Z
High-Z
ISB1, ISB2
Output Disabled
L
H
H
L
X
High-Z
High-Z
ICC,ICC1
L
X
X
H
H
High-Z
High-Z
Read
L
H
L
L
H
DOUT
High-Z
ICC,ICC1
L
H
L
H
L
High-Z
DOUT
L
H
L
L
L
DOUT
DOUT
Write
L
L
X
L
H
DIN
High-Z
ICC,ICC1
L
L
X
H
L
High-Z
DIN
L
L
X
L
L
DIN
DIN
Note:
1. CS# = H means CS1#=HIGH, and CS2= LOW in Dual Chip Select Device.
POWER UP INITIALIZATION
The device includes on-chip voltage sensor used to launch POWER-UP initialization process.
When VDD reaches stable level, the device requires 150us of tPU (Power-Up Time) to complete its self-initialization
process.
When initialization is complete, the device is ready for normal operation.
tPU 150 us
VDD
Stable VDD
0V Device Initialization Device for Normal Operation
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 6
Rev. 0A1
10/30/2017
ABSOLUTE MAXIMUM RATINGS
AND OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to VSS
–0.5 to VDD + 0.5V
V
VDD
VDD Related to VSS
–0.3 to 4.0
V
tStg
Storage Temperature
–65 to +150
C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
.
PIN CAPACITANCE (1)
Parameter
Symbol
Test Condition
Max
Units
Input capacitance
CIN
TA = 25°C, f = 1 MHz, VDD = VDD(typ)
6
pF
DQ capacitance (IO0–IO15)
CI/O
8
pF
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
OPERATING RANGE(1)
Range
Ambient
Temperature
IS61WV51216EEALL
VDD (20ns)
IS61WV51216EEBLL
VDD (8, 10ns)
IS64WV51216EEBLL
VDD (10ns)
Industrial
-40C to +85C
1.65V – 2.2V
2.4V – 3.6V
–
Automotive (A3)
-40C to +125C
–
–
2.4V – 3.6V
Note:
1. Full device AC operation assumes a 100 µs ramp time from 0 to VDD(min) and 200 µs wait time after VDD stabilization.
THERMAL CHARACTERISTICS (1)
Parameter
Symbol
Rating
Units
Thermal resistance from junction to ambient (airflow = 1m/s)
RθJA
TBD
°C/W
Thermal resistance from junction to pins
RθJB
TBD
°C/W
Thermal resistance from junction to case
RθJC
TBD
°C/W
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 7
Rev. 0A1
10/30/2017
AC TEST CONDITIONS (OVER THE OPERATING RANGE)
Parameter
Unit
(1.65V~2.2V)
Unit
(2.4V~3.6V)
Input Pulse Level
0V to VDD
0V to VDD
Input Rise and Fall Time
1.5 ns
1.5 ns
Output Timing Reference Level
½ VDD
½ VDD
R1 (ohm)
13500
319
R2 (ohm)
10800
353
VTM (V)
1.8V
3.3V
Output Load Conditions
Refer to Figure 1 and 2
AC TEST LOADS
Output
Zo = 50 ohm 50 ohm
30 pF,
Including
jig
and scope
VDD/2
R1
R2
VTM
OUTPUT 5pF,
Including
jig
and scope
R1
R2
VTM
OUTPUT 5pF,
Including
jig
and scope
FIGURE 1 FIGURE 2
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 8
Rev. 0A1
10/30/2017
DC ELECTRICAL CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS
(OVER THE OPERATING RANGE)
VDD = 1.65V – 2.2V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.4
—
V
VOL
Output LOW Voltage
IOL = 0.1 mA
—
0.2
V
VIH
(1)
Input HIGH Voltage
1.4
VDD + 0.2
V
VIL
(1)
Input LOW Voltage
–0.2
0.4
V
ILI
Input Leakage
GND < VIN < VDD
–1
1
µA
ILO
Output Leakage
GND < VIN < VDD, Output Disabled
–1
1
µA
Notes:
1. VILL(min) = -1.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max) = VDD + 1.0V AC (pulse width < 10ns). Not 100% tested.
2.
DC ELECTRICAL CHARACTERISTICS
(OVER THE OPERATING RANGE)
VDD = 2.4V – 3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH
Voltage
2.4V ~ 2.7V
VDD = Min., IOH = -1.0 mA
2.0
—
V
2.7V ~ 3.6V
VDD = Min., IOH = -4.0 mA
2.2
VOL
Output LOW
Voltage
2.4V ~ 2.7V
VDD = Min., IOL = 2.0 mA
—
0.4
V
2.7V ~ 3.6V
VDD = Min., IOL = 8.0 mA
—
0.4
VIH
(1)
Input HIGH Voltage
2.4V ~ 2.7V
2.0
VDD + 0.3
V
2.7V ~ 3.6V
2.0
VIL
(1)
Input LOW Voltage
2.4V ~ 2.7V
–0.3
0.6
V
2.7V ~ 3.6V
–0.3
0.8
ILI
Input Leakage
VSS < VIN < VDD
–2
2
µA
ILO
Output Leakage
VSS < VIN < VDD, Output Disabled
–2
2
µA
Note:
1. VIL(min) = -0.3V DC ; VIL(min) = -2.0V AC (pulse width 2.0ns). Not 100% tested.
VIH (max) = VDD + 0.3V DC ; VIH(max) = VDD + 2.0V AC (pulse width 2.0ns). Not 100% tested..
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 9
Rev. 0A1
10/30/2017
POWER SUPPLY CHARACTERISTICS-II FOR POWER
(OVER THE OPERATING RANGE)
Symbol
Parameter
Test Conditions
Grade
-8
Max.
-10
Max.
-20
Max
Unit
ICC
VDD Dynamic Operating
Supply Current
VDD = MAX, IOU T = 0 mA, f = fMAX
Com.
90
85
80
mA
Ind.
100
95
90
Auto.
-
135
-
ICC1
Operating Supply
Current
VDD = MAX,
IOUT = 0 mA, f = 0
Com.
80
80
80
mA
Ind.
90
90
90
Auto.
-
110
-
ISB1
TTL Standby Current
(TTL Inputs)
VDD = MAX,
VIN = VIH or VIL
CS# ≥ VIH , f = 0
Com.
40
40
40
mA
Ind.
50
50
50
Auto.
-
60
-
ISB2
CMOS Standby Current
(CMOS Inputs)
VDD = MAX,
CS# ≥ VDD - 0.2V
VIN ≥ VDD - 0.2V , or VIN ≤ 0.2V , f
= 0
Com.
30
30
30
mA
Ind.
40
40
40
Auto.
-
50
-
Typ. (2)
10
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input line change.
2. Typical values are measured at VDD = 3.0V/1.8V, TA = 25 °C and not 100% tested.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 10
Rev. 0A1
10/30/2017
AC CHARACTERISTICS
(OVER OPERATING RANGE)
READ CYCLE AC CHARACTERISTICS
Parameter
Symbol
-8(1)
-10(1)
-20(1)
unit
notes
Min
Min
Min
Max
Min
Max
Read Cycle Time
tRC
8
-
10
-
20
-
ns
Address Access Time
tAA
-
8
-
10
-
20
ns
Output Hold Time
tOHA
2.5
-
2.5
-
2.5
-
ns
CS# Access Time
tACE
-
8
-
10
-
20
ns
OE# Access Time
tDOE
-
5.5
-
6
-
8
ns
OE# to High-Z Output
tHZOE
0
4
0
5
0
8
ns
2
OE# to Low-Z Output
tLZOE
0
-
0
-
0
-
ns
2
CS# to High-Z Output
tHZCE
0
4
0
5
0
8
ns
2
CS# to Low-Z Output
tLZCE
3
-
3
-
3
-
ns
2
UB#, LB# Access Time
tBA
-
5.5
-
6
-
8
ns
UB#, LB# to High-Z Output
tHZB
0
4
0
5
0
8
ns
2
UB#, LB# to Low-Z Output
tLZB
0
-
0
-
0
-
ns
2
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of VDD/2, input pulse levels of 0V to VDD and output
loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (ADDRESS CONTROLLED, CS# = OE# = UB# = LB# = LOW, WE# = HIGH)
tRC
Address
DQ 0-15
tOHA tOHA
tAA
PREVIOUS DATA VALID DATA VALID
PREVIOUS ERROR VALID ERROR1 VALID
ERR1
LOW-Z
LOW-Z
PREVIOUS ERROR VALID ERROR2 VALID
ERR2 LOW-Z
Notes:
1. The device is continuously selected.
2. ERR1, ERR2 signals act like a Read Data Q during Read Operation.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 11
Rev. 0A1
10/30/2017
READ CYCLE NO. 2(1) (OE# CONTROLLED, WE# = HIGH)
OE#
CS#
DOUT
tAA
ADDRESS
tRC
tOHA
tDOE
tLZOE
tACS
tLZCS
tHZOE
tHZCS
HIGH-Z DATA VALID
tLZB tHZB
tBA
UB#,LB#
LOW-Z
Note:
1. Address is valid prior to or coincident with CS# LOW transition.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 12
Rev. 0A1
10/30/2017
WRITE CYCLE AC CHARACTERISTICS
Parameter
Symbol
-8(1)
-10(1)
-20(1)
unit
notes
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
8
-
10
-
20
-
ns
CS# to Write End
tSCS
6.5
-
8
-
12
-
ns
Address Setup Time to Write End
tAW
6.5
-
8
-
12
-
ns
UB#,LB# to Write End
tPWB
6.5
-
8
-
12
-
ns
Address Hold from Write End
tHA
0
-
0
-
0
-
ns
Address Setup Time
tSA
0
-
0
-
0
-
ns
WE# Pulse Width
tPWE1
6.5
-
8
-
12
-
ns
WE# Pulse Width (OE# = LOW)
tPWE2
8
-
10
-
17
-
ns
2
Data Setup to Write End
tSD
5
-
6
-
9
-
ns
Data Hold from Write End
tHD
0
-
0
-
0
-
ns
WE# LOW to High-Z Output
tHZWE
-
3.5
-
4
-
9
ns
WE# HIGH to Low-Z Output
tLZWE
2
-
2
-
3
-
ns
Notes:
1 The internal write time is defined by the overlap of CS# = LOW, UB# or LB# = LOW, and WE# = LOW. All conditions must be in valid states
to initiate a Write, but any condition can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
2 tPWE > tHZWE + tSD when OE# is LOW.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS# CONTROLLED, OE# = HIGH OR LOW)
ADDRESS
CS#
WE#
UB#,LB#
DOUT
DIN
tWC
tHA
tAW tPWE
tPWB
tSA
tHZWE tLZWE
tSD tHD
DATA IN VALID
DATA UNDEFINED HIGH-Z
DATA UNDEFINED
tSCS
(1)
(2)
Note:
1. tHZWE is based on the assumption when tSA=0nS after READ operation. Actual DOUT for tHZWE may not appear if OE# goes high
before Write Cycle.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 13
Rev. 0A1
10/30/2017
WRITE CYCLE NO. 2(1,2) (WE# CONTROLLED: OE# IS HIGH DURING WRITE CYCLE)
ADDRESS
CS#
WE#
UB#,LB#
DOUT
DIN
tWC
tHA
tAW tPWE
tPWB
tSA
tHZOE
tSD tHD
DATA IN VALID
DATA UNDEFINED HIGH-Z
DATA UNDEFINED
tSCS
(1)
(2)
OE#
Notes:
1. tHZOE is the time DOUT goes to High-Z after OE# goes high.
2. During this period the I/Os are in output state. Do not apply input signals.
WRITE CYCLE NO. 3(1) (WE# CONTROLLED: OE# IS LOW DURING WRITE CYCLE)
tWC
tHA
tAW
tPWE2
tSA
tHZWE tLZWE
HIGHZ
tSD tHD
DATA UNDEFINED
DATA IN VALID
ADDRESS
CS#=LOW
WE#
DOUT
DIN
OE# = LOW
tPWB
UB#,LB#
Note:
3. If OE# is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the
previous READ operation will drive IO BUS.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 14
Rev. 0A1
10/30/2017
WRITE CYCLE NO. 4(1, 2, 3) (UB# & LB# Controlled, CS# = OE# = LOW)
ADDRESS
WE#
DOUT
DIN
tSA
tHZWE
tPWB
tHA
DATA IN
VALID
ADDRESS 1 ADDRESS 2
tWC
DATA IN
VALID
DATA UNDEFINED tHD
tSD
HIGH-Z tLZWE
WORD 1 WORD 2
UB#, LB#
tHA
OE#=LOW
CS#=LOW
tSA
tPWB
tWC
Notes:
1 If OE# is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the
previous READ operation will drive IO BUS.
2 Due to the restriction of note1, OE# is recommended to be HIGH during write period.
3 WE# stays LOW in this example. If WE# toggles, tPWE and tHZWE must be considered.
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 15
Rev. 0A1
10/30/2017
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Test Condition
OPTION
Min.
Typ.(2)
Max.
Unit
VDR
VDD for Data
Retention
See Data Retention Waveform
VDD = 2.4V to 3.6V
2.0
3.6
V
VDD = 1.65V to 2.2V
1.2
3.6
IDR
Data Retention
Current
VDD= VDR(min),
CS# ≥ VDD – 0.2V
Com.
-
10
30
mA
Ind.
-
-
40
Auto
-
-
50
tSDR
Data Retention
Setup Time
See Data Retention Waveform
0
-
-
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
-
-
ns
Note:
1. If CS# > VDD–0.2V, all other inputs including UB# and LB# must meet this condition.
2. CS#=H means CS1#=HIGH, and CS2=LOW in Dual Chip Select Device
3. Typical values are measured at VDD = VDR (Min), TA = 25 °C and not 100% tested.
DATA RETENTION WAVEFORM (CS# CONTROLLED)
GND
CS#
VDR
VDD
CS# > VDD – 0.2V
Data Retention Mode
tSDR tRDR
IS61WV51216EEALL
IS61/64WV51216EEBLL
Integrated Silicon Solution, Inc.- www.issi.com 16
Rev. 0A1
10/30/2017
ORDERING INFORMATION
Industrial Range: -40°C to +85°C, Voltage Range: 1.65V to 2.2V
Speed (ns)
Order Part No.
Package
20
IS61WV51216EEALL-20BLI
mini BGA (6mm x 8mm), Lead-free
20
IS61WV51216EEALL-20B2LI
mini BGA (6mm x 8mm), ERR1/2 Pins, Lead-free
20
IS61WV51216EEALL-20TLI
44 TSOP (Type II), Lead-free
20
IS61WV51216EEALL-20T2LI
48 TSOP (Type I), ERR1/2 Pins , Lead-free
Industrial Range: -40°C to +85°C, Voltage Range: 2.4V to 3.6V
Speed (ns)
Order Part No.
Package
8
IS61WV51216EEBLL-8BI
mini BGA (6mm x 8mm)
8
IS61WV51216EEBLL-8BLI
mini BGA (6mm x 8mm), Lead-free
8
IS61WV51216EEBLL-8B2I
mini BGA (6mm x 8mm), ERR1/2 Pins
8
IS61WV51216EEBLL-8B2LI
mini BGA (6mm x 8mm), ERR1/2 Pins, Lead-free
8
IS61WV51216EEBLL-8TLI
44 TSOP (Type II), Lead-free
8
IS61WV51216EEBLL-8T2LI
48 TSOP (Type I), ERR1/2 Pins, Lead-free
8
IS61WV51216EEBLL-8T3LI
54 TSOP (Type II), Lead-free
8
IS61WV51216EEBLL-8T4LI
54 TSOP (Type II), ERR1/2 Pins, Lead-free
10
IS61WV51216EEBLL-10BI
mini BGA (6mm x 8mm)
10
IS61WV51216EEBLL-10BLI
mini BGA (6mm x 8mm), Lead-free
10
IS61WV51216EEBLL-10B2I
mini BGA (6mm x 8mm), ERR1/2 Pins
10
IS61WV51216EEBLL-10B2LI
mini BGA (6mm x 8mm), ERR1/2 Pins, Lead-free
10
IS61WV51216EEBLL-10TLI
44 TSOP (Type II), Lead-free
10
IS61WV51216EEBLL-10T2LI
48 TSOP (Type I), ERR1/2 Pins, Lead-free
10
IS61WV51216EEBLL-10T3LI
54 TSOP (Type II), Lead-free
10
IS61WV51216EEBLL-10T4LI
54 TSOP (Type II), ERR1/2 Pins, Lead-free
Automotive Range (A3): –40°C to +125°C, Voltage Range: 2.4V to 3.6V
Speed (ns)
Order Part No.
Package
10
IS64WV51216EEBLL-10BA3
mini BGA (6mm x 8mm)
10
IS64WV51216EEBLL-10BLA3
mini BGA (6mm x 8mm), Lead-free
10
IS64WV51216EEBLL-10B2A3
mini BGA (6mm x 8mm), ERR1/ERR2 Pins
10
IS64WV51216EEBLL-10B2LA3
mini BGA (6mm x 8mm), ERR1/ERR2 Pins, Lead-free
10
IS64WV51216EEBLL-10CTLA3
44 TSOP (Type II), Copper Leadframe, Lead-free
10
IS64WV51216EEBLL-10CT2LA3
48 TSOP (Type I), Copper Leadframe, ERR1/2 Pins , Lead-free
10
IS64WV51216EEBLL-10CT3LA3
54 TSOP (Type II), Copper Leadframe, Lead-free
10
IS64WV51216EEBLL-10CT4LA3
54 TSOP (Type II), Copper Leadframe, ERR1/2 Pins , Lead-free
