"3875081 GE SOLID sTaTE O01 DE [3875081 oo1aa7a s ff 5. Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 ee T-39-11 File Number 1582 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V-500V fos(on) = 1.5Q and 2.00 Features: a SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics High Input impedance = Majority carrier device The !RF830, IRF831, IRF832 and IRF&33 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The !RF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Orain- Gate Orein Continuous Pulsed Oratn Gate - Source Max, Power Inductive Chumped Junction and Storage Range 322 ~~ - =~ N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE |r DRAIN Pl ~ Loar 9208-39520 IN (FLANGE) "| O TOP VIEW JEDEC TO-220AB +20 75 iSee 14) 0.6 Fig, 15 and 16) L = 18 1 -55 to 150 300 10.063 in (1.6mm) fram case 3875081 G E SOLID STATE O1 ve 4875061 0018380 1 re Teel standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min, Typ. | Max. Unita Taat Concttiona BYpsg Oran: Source Breakdown Voltage 1AFBSO Teg | _ v Vag = OV IAFB32 , . IAFO31 inraaa | 450 | - | = v Ip = 250uA Vgsitn) Gate Threshold Voltage ALL 2.0 - 4.0 v Vos Yas: 'p 250nA | 'oss Gate-Sour akage Forward ALL = - 800 na a= 20V Igss __ Gate-Source Leakage Reverse ALL - = }-800 nA Vas = -20V logs - Zato Gate Voltege Drain Current aAUL - = 260 BA Vos = Max. Rating, Vgg = OV - =~ 4} 1000 nA Yos = Man, Rating x 0.8, Vgg = OV, Te = 126C Iplon) On State Orsin Current @ mraso Tg | - | A IRFA31 Vos? 'pton * Boston) max. Yas * 10V iRFO32 | gg | _ - A IAF833 * Rosion) Static Orain-Source On-State RF830 _ 1391 15 2 Resistance IRF&31 Vos = 10V. tp = 2.54 mresz2 | lag] aol a iAFBI3 : Cp Forward Transconductance @ ALL 25 |3.26| - | sw Vos >loton * Fostont max, 'p = 2-84 Cis Input Capacrance ALL - 600 | 800 pF Vag * OV. Vpg = 25V, 1 = 1.0MH: Coy _ Output C. ALL =| 100 | 200] oF See Fig. 10 Css Reverse Transfer Capacitance ALL - 30 60 pF Tglgn)__Twin-On Delay Time ALL = - [3% fr Vpp = 226ip = 2.6A, 2, = 180 ty fuse Time ALL = ~ 30 ns See Fig. 17 tgtotty _ Turn-Off Delay Time : ALL = - 55 os (MOSFET switching times are essentially tf Fall Time ALL _ 30 ne lndepandent of operating temperature.) Q. Totat Gate Charge _ Vag @ 10. ip * 6.0A, Vig = 0.8 Max. Rating, 4 (Gate-Source Plus Gate-Drain} atl 22 30 nc See Fig. 18 tor test clrcuit, [Gate cherge is escentially Qps Gate-Souce Charge ALL _ " _ nc Independant of operating temperature.) O58 Gate-Dratn (Millar) Charge ALL - W ~ ac lp (internal Drain inductance - 3.8 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die, internal device - ALL - as ad nH Measured from the drain tead, Grom [0.26 o in.) from package to. center of die. w ks Internal Source inductance ALL - 7.8 - oH Measured from the source lead, 6mm s is (0,26 in.) from package to source banding psd. 3 Thermal Resistance Pine _ Junetion-to-Case ALL - = | 1.67 | crw Fincs _ Case-to-Sink ALL - 1,0 - cew Mounting surface flat, smooth, and greated. Anja _Junection-to-Ambiant ALL - - 80 stsw Free Ale Operation Source-Drain Diode Ratings and Characteristics Is Continous Source Current IRF830 - . 4s A Modified MOSFET symbot (Body Diode} (AFB31 " showing the integrs! 1AFO32 teverse PN junction rectifier. o wares |] ~ | | 40] A tora Pulse Source Current (RFBIO - . 16 A {Body Diode} IRF631 6 IAF32 inre33 | ~ | ~ | 8 | 4 Vv; Diode Forward Voit IRFB30- so sae reso pe da | ov To = 28C, ts = 4.54, Vgg = OV IRFO32 inrosa | ~ | 1.6 v Te = 28C, Is = 4.0A, Veg = OV tee Ravarse Recovery Time ALL - 800 - as Ty = 150C, te 4.5A, dip/dt = 100 Afus Org Reverse Recovered Charge ALL - 4.6 - sc Ty = 150C, Ig = 4.5A, digidt = 100 A/us fon Forward Turm-on Tlme ALL toteinaic turn-on me Is negligible. Turn-on apeed is substantially controlled by Lg + Lp. OTy = 26C to 150C. @ Pulue Test: Pulse width < 300,8, Duty Cycle < 2%. @D Rapetitive Rating: Pulse width bmited by mas, junction temperature, See Transient Thermal impedance Curve (Fig. 5), : 323 Standard Power MOSFETs 3875081 GE SOLID STATE O01 pe ss7soa1 00148341 3 > T-39-11 IRF830, IRF831, IRF832, IRF833 g x 2 z = E = 3 = < 5 3s . 100 700 Vos. OBAIH TO-SOUACE VOLTAGE (VOLTS) Fig. 1 Typical Qutput Characteristics g = & z = = = = 3 z < 5 s Q 2 4 t Vag. ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics ~ 2 Q ~ & SINGLE THERMAL IMPEQANCE) MUR, NORMALIZED EFFECTIVE TRANSIENT dnc TNE aMaL IMPEDANCE (PER UNIT) 2 8 1S 02 5 wt 2 5 193 Vos > 'oten)* Rosten) max. ue \ uN Tye 588 Ip. ORAIN CURRENT {AMPERES) cy 6 1 2 3 Vas. GATE TO SQUACE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics {S LIMITED tp, ORAIN CURRENT (AMPERES) 10 10 2 5 wo so 100 20S Vos. ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area po 1, DUTY FACTOR.O# + . 7. PEA UNITMASE Ring * 167 DEG. Ci. 2. Tye Te Pom uct. 2 S$ we 2 5S owt 2 5 1 2 ' 4 ty, SOUARE WAVE PULSE OURATION (SECONDS} Fig. Maximum Effective Transiant Thermal impedance, Junction-to-Cate Vs. Pulse Duration 324 3875081 GE SOLID STATE O1 pe J) 3a7s0a3 014382 5 D -J-39-11 - Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 gy TRANSCONDUCTANCE (StEMENS) Ing, REVERSE DRAIN CURRENT (AMPERES) yt a o ' 2 3 5 9 1 2 3 4 Ig, DRAIN CURRENT (AMPERES Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs, Drain Current Fig. 7 ~ Typical Source-Drsin Diode Forward Voltage & ws = g 5 B 3 2. gs ag '% ug 53 Bz ws 2 =z ws Bz gz gc 26 eo Sz oss ze sg < F = 2 + a e S Vgg* a B Gs 4 Os Ips 15A > z 025 40 0 80 120 10 40 0 0 a na Ty, JUHCTIGN TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 0 4: 1 MH 1600 Cay Cy + Cgg, Cgy SHORTED # Cre Og 2 Com * Cus * et 5 = ths 3 wm 1200 w Cus # Ogg 5 2 3 < 3 3 2 =< 2 a Qo & m0 o vo i= < o 3 400 s Ip 6A FOR TEST CIRCUIT 8 Q 10 20 Hn 40 50 a ' 16 a4 4 Vos. ORAIN TO SOURCE VOLTAGE (VOLTS} Gy. TOTAL GATE CHARGE (nC) Fig. 10 ~ Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage Le 325 "3875081 GE soLID state O1 DEQ) 3a7soas oo1e383 7 Ay p35 Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 5 MEASUAEO CURRERT PULSE OF INITIAL Ty 2 259C. (HEATING ' g = & a : 3 g 5 2 2 2g a z z = 3 5 5 83 = = < > > 3 3 3 Zz? . < z 5 i, 8 4 ri ' a e 1 0 5 19 1% 20 25 5 $0 % 100 15 150 Ip, ORAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistaence Vs. Drain Current Fig. 13 Maximum Orain Current Vs. Case Temperature a0 0 60 Po, POWER DISSIPATION (WATTS! 3 o 0 a 60 40 100 Ro NO Te. CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VAAY ty 10 OOTAIN REQUIRES PEAK A IL = Yes" 20bey " 1 #0 S8V p56 Ve" O.158Vpes Fig. 15 Clamped Inductive Test Circult Fig. 16 Clamped inductive Waveforms o os (ISGLATED SUFPLY} CURRENT REGULATOR Yop > 2086 at SAME TYPE Iv BR GATTERY Tf PAF < Vane fy Tat Vo 71 O SCOPE : Jt = ~ Tr 0 ---. Fig. 17 Switching Time Tast Circuit 0 CURRENT = CURRENT SHUNT SHUAT Fig. 18 Gate Charge Test Circuit