SIEMENS Silicon Low Leakage Diode @ Low-leakage applications @ Medium speed switching times BAS 116 @ Single diode VPSOE16t Type Marking Ordering Code Pin Configuration Package") (tape and reel) BAS 116 JVs Q62702-A919 { DI 3. | SOT-23 EHAN7C02 Maximum Ratings Parameter Symbol Values Unit Reverse voliage Va 75 Vv Peak reverse voltage Vam 85 Forward current Ir 250 mA Surge forward current, t= 1 us Irs 45 A Total power dissipation, Ts = 54 C Prot 370 mW Junction temperature Ti 150 Cc Storage temperature range Taig - 65... + 150 Thermal Resistance Junction - ambient?) Rina < 330 KW Junction - soldering point Reus < 260 1) For detailed information see chapter Package Outlines. 2} Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 236 5.91 SIEMENS BAS 116 Electrical Characteristics at Ts = 25 C, unless otherwise specified. Parameter Symbol! Values Unit min. | typ. | max. DC characteristics Breakdown voltage Vary 75 - - Vv Ter) = 100 pA Forward voltage Vr mV IkF= 1mA - - 900 Ir= 10mA ~ - 1000 le= 50mA - ~ 1100 Ie = 150mA - - 1250 Reverse current Tr nA Va=75V - - 5 Va=75V, Ta= 150C - ~ 80 AC characteristics Diode capacitance Co - 2 _ pF Va =0V, f= 1 MHz Reverse recovery time tr ~ 0.5 3 us Ip=10mA, In=10mA, R= 100 2 measured at /;h=1mMA Test circuit for reverse recovery time O.WT. WT t, Cscillograph BHNONEZ Pulse generator: tp=5 us, D=0.05 Oscillograph: R= 502 t= 0.6 ns, Rj = 502 tr = 0.35 ns Cs1pF Semiconductor Group 237 SIEMENS BAS 116 Forward current /r = f (Ta*; Ts) Reverse current /r = f (Ta) * Package mounted on epoxy BAS 116 EHBO00S2 BAS 116 EHBOOOS3 300 102 i nA mA N 1, 1 \ \\ | 10 200 N N 10 N\ 5 NN ANN 1 4 10 100 \ 107 % 50 Too *C 150 10-8 Ik Forward current /r = (Vr) Ta = 25C BAS 116 EHBOOOS4 150 50 0 0.5 1.0 Vo145 Semiconductor Group 0 50 100C 150 N Peak forward current rw = f () 10 1078 1074 107% 107? 107's 10 } 238 SIEMENS BAS 116 Forward voltage Ve = f (7a) BAS 116 EHBO00SS 5 I 0.5 0 50 100 = C150 wT, Semiconductor Group 239