V
RRM
= 50 V - 400 V
I
O
= 35 A
Features
KBPC-T/W Package
Mechanical Data
KBPC35005T/W thru KBPC3504T/W
Maximum ratings at Tc
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Polarity: Marked on case
Single Phase Silicon
Brid
e Rectifier
• High efficiency
• Metal case
Case: Mounted in the bridge encapsulation
• Not ESD Sensitive
• Silicon junction
Mounting: Hole for #10 screw
• Types from 50 V to 400 V V
RRM
Parameter Symbol
KBPC35005T/
KBPC3501T/W
Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol
KBPC35005T/
KBPC3501T/W
Unit
Maximum average forward rectified
current I
O
35 35 A
Peak forward surge current I
FSM
400 400 A
Maximum instantaneous forward
voltage per leg 1.1 1.1
55
500 500
Typical junction capacitance
1
C
j
300 300 pF
Thermal characteristics
Typical thermal resistance
2
R
ΘJC
1.4 1.4 °C/W
1
- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.
2
- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
T
c
= 55 °C 35 35
8.3 ms half sine-wave
400 400
KBPC3504T/W
300 300
1.4 1.4
500
400
280
400200
T
c
= 25 °C
I
F
= 17.5 A
Conditions
KBPC3504T/W
200
140
KBPC3502T/W
-55 to 150
Maximum DC reverse current at
rated DC blocking voltage per leg I
R
T
c
= 100 °C μA
5
Conditions
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
500
-55 to 150 -55 to 150
-55 to 150
V
F
1.1 1.1
KBPC3502T/W
5
Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1