CDSOT23-SLVU2.8 — Surface Mount TVS Diode
Features
RoHS compliant*
Low capacitance - 2.5 pF
ESD protection
Surge protection
Applications
Personal Digital Assistants (PDAs)
Mobile phones & accessories
Memory card protection
SIM card port protection
Portable electronics
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The CDSOT23-SLVU2.8 device provides ESD, EFT and Surge protection for
high speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements. The Transient Voltage Suppressor Array offers a
Working Peak Reverse Voltage of 2.8 V and Minimum Breakdown Voltage of 3 V.
The SOT23 packaged device will mount directly onto the industry standard SOT23
footprint. Bourns®Chip Diodes conform to JEDEC standards, are easy to handle with
standard pick and place equipment and the flat configuration minimizes roll away.
Note:
1. See Peak Pulse Power vs. Pulse Time.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Symbol Value Unit
Peak Pulse Power (tp= 8/20 µs)1PPK 600 W
Peak Pulse Current (tp= 8/20 µs) IPPM 30 A
Storage Temperature TSTG -55 to +150 °C
Operating Temperature TOPR -55 to +150 °C
Minimum Breakdown Voltage @ 1 mA VBR 3.0 V
Minimum Snap Back Voltage @ 50 mA VBR 2.8 V
Maximum Working Peak Voltage VWM 2.8 V
Maximum Leakage Current @ VWM ID1.0 µA
(Pin 3 to Pin 1) or (Pin 2 to Pin 1)
Maximum Clamping Voltage @ IP= 2 A VC5.5 V
Maximum Clamping Voltage @ IP= 5 A VC7.0 V
(Pin 2 to in 1) 8.5
Maximum Clamping Voltage @ IP= 30 A VC21.0 V
Typical Junction Capacitance @ 0 V, 1 MHz
(Pin 3 to Pin 1 & Pin 2) CD20 pF
(Pin 2 to Pin 1 with Pin 3 NC) 2.5
Maximum Junction Capacitance @ 0 V, 1 MHz CD3pF
Maximum Peak Reverse Voltage @ I = 10 uA VRRM 40 V
Maximum Reverse Leakage Current @ VWM IDR 0.1 uA
Maximum Forward Voltage @ IF= 1 A, 120 µS VF2V