1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes input prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. 55LT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 39 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 50 Volts 3.5 Volts 5.0 A Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to +150 oC +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance c VSWR1 BVces BVebo Icbo hFE Cob jc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS F = 1000-1400 MHz Vcc = 28 Volts Pin = 2.5 Watts As Above F = 1.4 GHz, Pin = 2.5 W MIN TYP MAX 12 2.5 6.8 40 UNITS Watt Watt dB % 30:1 Ic = 5 mA Ie = 5 mA Vcb = 28 Volts 50 3.5 Vce = 5 V, Ic = 200mA F =1 MHz, Vcb = 28 V 10 3.0 12.0 4.5 Volts Volts mA pF C/W o Issue June 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120