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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1014 - 12
12 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts
of Class C, RF output power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
input prematching and utilizes gold metalization and diffused ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 39 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 5.0 A
Ma ximum Temperatures
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature +200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1000-1400 MHz
Vcc = 28 Volts
Pin = 2.5 Watts
As Above
F = 1.4 GHz, Pin = 2.5 W
12
6.8 40
2.5
30:1
Watt
Watt
dB
%
BVces
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Cu rrent
Current Gain
Output Capacitance
Thermal Resistance
Ic = 5 mA
Ie = 5 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 200mA
F =1 MHz, Vcb = 28 V
50
3.5
10 12.0
3.0
4.5
Volts
Volts
mA
pF
C/W
o
Issue June 1996
