TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 1
October 2008
TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
Medium Power Linear Switching Applications
Complementary to TIP125/126/127
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
VCEO Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP Collector Current (Pulse) 8 A
IB Base Current (DC) 120 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R 1 8 kW@
R 2 0.12k W@
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
IC = 100mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current
: TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
ICBO Collector Cut-off Current
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
1000
1000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
2.0
4.0
V
V
VBE(on) * Base-Emitter On Voltage VCE = 3V, IC = 3A 2.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f =
0.1MHz
200 pF
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 3
Typical characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
Cob
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF], CAPACITANCE
Cib
1 10 100
0.01
0.1
1
10
TIP121
TIP122
TIP120
DC
5ms
100ms
500ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP120/TIP121/TIP122 NPN Epitaxial Darlington TransistorTIP120/TIP121/TIP122
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. A1 5
Rev. I31
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