Microsemi – PPG reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
GENERAL DESCRIPTION
The MS2473 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the 1090MHz frequency band. The device has
gold thin-film metallization for proven highest MTTF. Low thermal resistance
packagin g reduces the j unction temperatur e and exten ds device li feti me.
CASE OUTLINE
M112
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 2300 Watts
Maximum Voltage and Current
BVcbo Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 46 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
ηη
ηc
RLIN
Power Out
Power Input = 150W
Power Gain
Collector Efficiency
Input Return Loss
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
600
6.0
35
10
150
Watts
Watts
dB
%
dB
BVebo
BVcbo
Ices
hFE
Θjc2
Emitter to Base Breakdown
Collector to Base Breakdown
Collector to Emitter Leakage
DC - Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 25 mA
Vce = 50V
Vce = 5V, Ic = 1A
3.5
65
5
0.06
35
200
Volts
Volts
mA
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial , January 2007
MS2473
600 Watts, 50 Volts, Pulsed
Avionics 1090 MHz
Microsemi – PPG reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
