COMMERCIAL LASERS
Key Features • 0.5, 1.2, 2.0 and 4.0 W CW power
• 50, 100, 200 and 500 µm apertures
• High-efficiency MOCVD quantum well design
• Open heatsink package
• High reliability
The 2300 series diode lasers offer high continuous wave (CW) optical power and
high brightness with unsurpassed reliability. The small emitting aperture,
combined with low beam divergence, makes the 2300 series one of the highest-
brightness CW diode lasers available in the industry today.
The 2300 series consists of partially coherent broad-area emitters with relatively
uniform emission over the emitting aperture. Operation is multi longitudinal
mode with a spectral envelope width of approximately 2 nm FWHM. The far field
beam divergence in the plane perpendicular to the P/N junction is nearly
Gaussian, while the lateral beam profile exhibits a multiple-transverse mode
pattern typical of broad-area emitters. Emitting apertures for 2300 variants range
from 50 to 500 µm, giving CW power output capability of up to 4 W with
superlative reliability. For higher-power 100 and 200 µm aperture devices, JDSU’s
2400 Series diode lasers are ideal.
The high efficiency of the quantum well structure, combined with low thermal
resistance epi-down chip mounting, provides minimum junction temperature at
high optical power. Low junction temperature and low thermal resistance
packages extend lifetime and increase reliability.
These diodes come mounted on conventional open heatsink packages that allow
easy integration into user systems.
Applications
• Solid-state laser pumping
• Medical/ophthalmic applications
• Free-space communication
• Beacons/illumination
Diode Lasers, 0.5 to 4.0 W, 8xx nm
2300 Series
NORTH AMERICA:800 498-JDSU (5378) WEBSITE:www.jdsu.comWORLDWIDE:+800 5378-JDSU
2
2300 SERIES DIODE LASERS
Dimensions Diagram (Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02 mm: x.x = ±0.5
x.xxx = ±0.010 x.xx = ±0.25
0.086 (2.18)
0.40 Nom. (10.00)
Protective Tab
0.157
(3.98)
0.110 (2.80)
0.020
(0.51)
0.31
(8.00)
0.125
(3.18)
0.25 (6.4)
0.03
(0.70)
Cathode
Lead ( - )
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
Insulator
Stand-off
Laser
Output
Case is
anode ( + )
θ
θ
0.06
(1.40)
or for 2380-A
A-block Open Heatsink Package
3
2300 SERIES DIODE LASERS
Typical Optical Characteristics
CW Output Power (W)
1.2
0.4 0.8 1.2 1.60
0.7
Current (A)
2.0
1.0 2.0 3.0 4.00
1.2
Current (A)
805 810 815
30 15 0 15 30
FWHM
= 32o
Far Field Energy
Distribution
Far Field Energy
Distribution
2360
Light vs. Current
2370
Light vs. Current
Typical Emission
Spectrum
θ(degrees) θ(degrees)
0.5
0
Current (A)
2350
Light vs. Current
0.3
0.80.60.2
Wavelength (nm)
0
Current (A)
2380
Light vs. Current
4.0
2.0
2.0 4.0 6.0 8.00.4
θ(degrees)
20 0 20 20 10 0 10 20
θ(degrees)
40 40
Far Field Energy
Distribution
Far Field Energy
Distribution
FWHM
= 34o
FWHM
= 12o
10 5 0 5 10
FWHM
= 12o
2350, 2360 and 2370 Laser Emission 2380 Laser Emission
4
2300 SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2350 Series 2360 Series Unit
Min. Typ. Max. Min. Typ. Max.
Laser Characteristics
CW output power2Po– – 0.5 – – 1.2 W
Center wavelength λc– (note1) – – (note1)– nm
Spectral width Δλ – 2 – – 2 – nm
Slope efficiency ηD = Po/(Iop–Ith) 0.7 0.9 – 0.7 0.9 – W/A
Conversion efficiency η = Po/(IopVop) – 30 – – 30 – %
Emitting dimensions W x H – 50 x 1 – – 100 x 1 – µm
FWHM beam divergence
Parallel to junction θ// –12– –12– degrees
Perpendicular to junction θ⊥–32– –32– degrees
Threshold current Ith – 0.2 0.25 – 0.4 0.6 A
Operating current Iop – 0.8 0.85 – 1.6 1.8 A
Operating voltage Vop – (note5) – – (note5)–
Series resistance Rs– 0.5 0.7 – 0.25 0.5 Ω
Thermal resistance Rth – 12 – – 10 – °C/W
Recommended case temperature Tc-20 – 30 -20 – 30 °C
Absolute Maximum Ratings
Reverse voltage Vrl ––3 –– 3 V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
1. Consult table on page 6 for the particular wavelength ranges that are available.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to these products include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.27 to 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
ITH2 = ITH1 exp [(T2– T1)/T0]
where T0is a device constant of about 160° K.
d. Temperature coefficient of operating current is approximately 1% per °C.
4. Modulation bandwidth of CW diode lasers is approximately 1 GHz though the effective rep rates are dependent on drive signals and use conditions.
5. Forward voltage is typically:
Vf= 1.5 V + Iop x Rs.
Available Configurations 2350 Series 2360 Series 2370 Series 2380 Series
2350-A 2360-A 2370-A 2380-A
5
2300 SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2370 Series 2380 Series Unit
Min. Typ. Max. Min. Typ. Max.
Laser Characteristics
CW output power2Po––2 –– 4 W
Center wavelength λc– (note1) – – (note1)– nm
Spectral width Δλ – 2 – – 2 – nm
Slope efficiency ηD = Po/(Iop–Ith) 0.7 0.9 – 0.7 0.9 – W/A
Conversion efficiency η = Po/(IopVop) – 30 – – 30 – %
Emitting dimensions (note6) W x H – 200 x 1 – – 500 x 1 – µm
FWHM beam divergence
Parallel to junction θ// –12– –12– degrees
Perpendicular to junction θ⊥–32– –32– degrees
Threshold current Ith – 0.9 1.2 – 2.0 2.5 A
Operating current Iop – 3.1 3.4 – 6.3 6.8 A
Operating voltage Vop – (note5) – – (note5)–
Series resistance Rs– 0.12 0.2 – 0.08 0.1 Ω
Thermal resistance Rth – 8 – – 4 – °C/W
Recommended case temperature Tc-20 – 30 -20 – 30 °C
Absolute Maximum Ratings
Reverse voltage Vrl ––3 –– 3 V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
1. Consult table on page 6 for the particular wavelength ranges that are available.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to these products include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.27 to 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
ITH2 = ITH1 exp [(T2– T1)/T0]
where T0is a device constant of about 160 °K.
d.Temperature coefficient of operating current is approximately 1% per °C.
4. Modulation bandwidth of CW diode lasers is approximately 1 GHz though the effective rep rates are dependent on drive signals and use conditions.
5. Forward voltage is typically:
Vf= 1.5 V + Iop x Rs.
6. The 2380 series near field consists of two active segments separated by an isolation space to produce specified aperture.
Continued
6
2300 SERIES DIODE LASERS
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
customer.service@jdsu.com.
Sample: 23-00379
Part Number Wavelength Power
23-00379 808 ± 3 nm0.5 W
23-00380 810 ± 3 nm0.5 W
Laser Chip: 50 µm Stripe
Package Style: "A-block" Open Heat Sink
Part Number Wavelength Power
23-00381 799 ± 3 nm1.2 W
23-00384 808 ± 2 nm1.2 W
23-00382 808 ± 3 nm1.2 W
23-00383 810 ± 5 nm1.2 W
Laser Chip: 100 µm Stripe
Package Style: "A-block" Open Heat Sink
Part Number Wavelength Power
23-00385 799 ± 3 nm2.0 W
23-00386 808 ± 3 nm2.0 W
23-00390 810 ± 3 nm1.0 W
23-00388 810 ± 2.5 nm1.4 W
23-00389 810 ± 2 nm2.0 W
23-00387 810 ± 5 nm2.0 W
Laser Chip: 200 µm Stripe
Package Style: "A-block" Open Heat Sink
Part Number Wavelength Power
23-00391 799 ± 3 nm4.0 W
23-00392 808 ± 3 nm4.0 W
23-00393 810 ± 5 nm4.0 W
Laser Chip: 500 µm Stripe
Package Style: "A-block" Open Heat Sink
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER Laser
Radiation
3011
2300 SERIES DIODE LASERS
NORTH AMERICA:800 498-JDSU (5378) WEBSITE:www.jdsu.comWORLDWIDE:+800 5378-JDSU
Labeling
21 CFR 1040.10 Compliance
Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are
illustrated here to comply with 21 CFR 1040.10 as applicable under the Radiation Control for Health and Safety Act of 1968.
Package Aperture Labels
A-block Package Diodes
User Safety
Safety and Operating Considerations
The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the
diode laser or into the collimated beam along its optical axis when the device is in operation.
CAUTION: THE USE OF OPTICAL INSTRUMENTS WITH THIS PRODUCT WILL INCREASE EYE HAZARD.
Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used
with the component must be employed such that the maximum peak optical power cannot be exceeded.
CW diode lasers may be damaged by excessive drive current or switching transients. When using power supplies, connect the
diode laser with the main power on and the output voltage at zero. The current should be increased slowly while the diode
laser output power and the drive current are monitored.
Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature
is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50 °C rather than 30 °C.
A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator
with a thermal impedance of less than 0.5 °C/W for increased reliability.
ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected diode laser failure. Take extreme precaution
to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers.
JDS Uniphase Corporation
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH: I op:
S/N:
Serial Number Identification Label Output Power Danger Labels
2350 2360,2370,2380
Product specifications and descriptions in this document subject to change without notice. © 2007 JDS Uniphase Corporation 10127809 Rev. 005 10/07 2300DIODELASER.DS.CL.AE October 2007
*SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
DANGER
GaAlAs Diode CW 8 W max.
CLASS IV LASER PRODUCT
3110
*SEE MANUAL
INVISIBLE LASER RADIATION*
GaAlAs Diode 1W Avg**
CLASS III B LASER PRODUCT
**Over a 40¡ Divergence Angle 3037
AVOID DIRECT
EXPOSURE TO BEAM
DANGER
