2848793 DIODES INCORPORATED SILICON RECTIFIERS DIODES INCORPORATED 4 DE Besyara3 o000e81 3 i , OPERATING AND STORAGE TEMPERATURE -65C to +175C Maximum. fon Average : Maximum Forward. |- Maximum Reverse / d 5 : Peak. tectified Current - > Peak Surge Current. :| ~~ - Current Maximum Forward ? Lap. pe: Sop @ Half-Wave : am ce tee . . Voltage |= Reverses fF Rosistive Loed 2S @8.3ms p>. J@ PRY SCT fo Voltage pe mupheiaeis o Superimposed 2} @2ECT,~ 5]. @25CTp PRV lo@ To lem (Surge) IR , lem Vem VeK Aav Cc ApK HAdc ApK VPK 3.0 AMPERES/DO-201AD ea = N54000 = 50 3.0 75 200 5.0 3.0 0.95 4N5401. --> 100 3.0 75 200 5.0 3.0 0.95 = NB5402 - 200 3.0 75 200 5.0 3.0 0.95 Po N6404 6: 400 3.0 75 200 5.0 3.0 0.95 Ps. NS406 600 3.0 75 200 5.0 3.0 0.95 s1N5407.. 800 3.0 75 200 5.0 3.0 0.95 - f-1N6408 1000 3.0 75 200 5.0 3.0 | 3.0 AMPERES / DO-201AD eas DIR500 . 50 3.0 95 100 5.0 9.4 11 DIR5O1 100 3.0 95 . 100 5.0 9.4 11 - DIR6OZ ~ 200 3.0 95 100 5.0 9.4 1.1 * DIR5O4 ~ 400 3.0 95 100 5.0 9.4 1.1 DIR506 600 3.0 95 100 5.0 9.4 11 -. DIR5OB 800 3.0 95 100 5.0 9.4 14 DIR5IO 1000 3.0 95 100 5.0 9.4 7 6.0 AMPERES/R-6 _ BACB: =. 50 6.0 76 400 10 6.0 0.9 6AL 400 6.0 75 400 10 6.0 0.9 GA2 200 6.0 75 400 10 6.0 0.9 6A4 400 6.0 75 400 10 6.0 0.9 GAB. 600 6.0 75 400 10 6.0 0.9 BAB 800 6.0 75 400 10 6.0 0.9 - 6A10- ~~ 1000 6.0 75 400 10 6.0 0.9 30 AMPERES /TO-3P NSP8139. 72 50 30 *100 300 10 15 1.2 : WNSP8140 9 > 100 30 =100 300 10 15 1.2 NSP8141 |. 200 30 *100 300 10 15 1.2 NSP8142 > 400 30 *100 300 10 15 1.2 NSP8143- 600 30 *100 300 10 15 1.2 NSP 81447 800 30 *100 300 10 - 15 1.2 NOTE: 1. Common Cathode = Siffix A, Doubler Connection = Suffix D. 2, *" Case Temperature. 34