SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
* Excellent hFE characterisristics up to IC=50mA
* Low Saturation voltages
PARTMARKING DETAIL – 560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -500 V
Collector-Emitter Voltage VCEO -500 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -500 mA
Continuous Collector Current IC-150 mA
Power Dissipation Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500 V IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -500 V IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO
; ICES -100 nA VCB
=-500V; VCE=-500V
Emitter Cut-Off Current IEBO -100 nA VEB
=-5V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.2
-0.5
V
V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-10mA *
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 V IC=-50mA, IB=-10mA *
Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE
=-10V *
Static Forward Current Transfer
Ratio
hFE 100
80
15 typ
300
300
IC=-1mA, VCE
=-10V
IC=-50mA, VCE
=-10V *
IC=-100mA, VCE
=-10V*
Transition Frequency fT60 MHz VCE
=-20V, IC=-10mA,
f=50MHz
Output Capacitance Cobo 8pFV
CB
=-20V, f=1MHz
Switching times ton
toff
110 typ.
1.5 typ.
ns
µs
VCE
=-100V, IC=-50mA,
IB1=-5mA, IB2
=10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
FMMT560