NPN SILICON SWITCHING TRANSISTOR 2N5785N1 * Hermetic SMD0.5 Metal package. * Ideally Suited for Linear Amplifier and Switching Applications. * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 65V 50V 5V 3.5A 1.0A 25W 0.2W/C -65 to +150C -65 to +150C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 5 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8788 Issue 1 Page 1 of 3 NPN SILICON SWITCHING TRANSISTOR 2N5785N1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions IC = 100A V(BR)CEO Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage ICER Collector Cut-Off Current ICEX Collector Cut-Off Current ICEO Collector Cut-Off Current IEBO V(BR)CER (1) (1) hFE (1) RBE = 100 IC = 10mA Typ Max. Units 65 V 50 VCE = 50V 10 A RBE = 100 TC = 150C 1.0 mA VBE = -1.5V VCE = 60V 10 A TC = 150C 1.0 mA VCE = 35V IB = 0 100 Emitter Cut-Off Current VBE = -5V IC = 0 10 DC Forward-current transfer ratio VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage VBE Base-Emitter Voltage (1) Min. IC = 1.2A 20 IC = 3.2A 4 100 IC = 1.2A IB = 0.12A 0.75 IC = 3.2A IB = 0.8A 2 IC = 1.2A VCE = 2V 1.5 IC = 0.1A VCE = 2V A - V DYNAMIC CHARACTERISTICS | hfe | Magnitude of CommonEmitter Small-Signal ShortCircuit forward Current, Transfer Ratio ton Turn-On Time 5 f = 4MHz IC = 1.0A VCC = 30V 25 - 5 s toff Turn-Off Time IB1 = IB2 = 0.1A 15 Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8788 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR 2N5785N1 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 1 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 3.05 (0.120) 0.127 (0.005) 2 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) (TO-276AA) Underside View Pad 1 - Base Pad 2 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Pad 3 - Emitter Website: http://www.semelab-tt.com Document Number 8788 Issue 1 Page 3 of 3