NPN SILICON
SWITCHING TRANSISTOR
2N5785N1
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8788
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CER
(1)
Collector-Emitter
Breakdown Voltage IC = 100µA RBE = 100Ω 65
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA 50
V
VCE = 50V 10 µA
ICER Collector Cut-Off Current RBE = 100Ω TC = 150°C 1.0 mA
VBE = -1.5V VCE = 60V 10 µA
ICEX Collector Cut-Off Current TC = 150°C 1.0 mA
ICEO Collector Cut-Off Current VCE = 35V IB = 0 100
IEBO Emitter Cut-Off Current VBE = -5V IC = 0 10 µA
IC = 1.2A 20 100
hFE
(1)
DC Forward-current transfer
ratio VCE = 2V IC = 3.2A 4 -
IC = 1.2A IB = 0.12A 0.75
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 3.2A IB = 0.8A 2
VBE Base-Emitter Voltage IC = 1.2A VCE = 2V 1.5
V
DYNAMIC CHARACTERISTICS
IC = 0.1A VCE = 2V
| hfe |
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio f = 4MHz 5 25 -
ton Turn-On Time IC = 1.0A VCC = 30V 5
toff Turn-Off Time IB1 = IB2 = 0.1A 15
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%