2N2605 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: * Noise-level amplifier circuits * Low power * PNP silicon transistor * Screening and processing per MIL-PRF-19500 * JAN level (2N2605J) * JANTX level (2N2605JX) * JANTXV level (2N2605JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/354 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 60 Collector-Base Voltage VCBO 70 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 30 mA Power Dissipation, TA = 25C Derate linearly above 25C PT 400 2.28 Thermal Resistance RJA 437 mW mW/C C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 C Copyright 2010 Rev. H SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2605 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Collector-Base Cutoff Current ICBO1 ICBO2 Collector-Emitter Cutoff Current ICES IC = 10 mA VCB = 70 Volts VCB = 50 Volts VCB = xx Volts, TA = xxxC VCE = 50 Volts Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 6 Volts VEB = 5 Volts On Characteristics Min Typ Max Units Volts 10 10 A nA 10 nA 10 2 A nA 60 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Test Conditions IC = 10 A, VCE = 5 Volts IC = 500 A, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C Min 100 150 100 30 300 450 400 0.7 0.9 Volts 0.3 Volts Max Units Base-Emitter Saturation Voltage VBEsat1 IC = 10 mA, IB = 500 A Collector-Emitter Saturation Voltage VCEsat1 IC = 10 mA, IB = 500 A Typ Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance COBO Noise Figure NF1 NF2 NF3 hie hoe Test Conditions VCE = 5 Volts, IC = 0.5 mA, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz hre VCB = 5V, IC = 1mA, f = 1kHz Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio Copyright 2002 Rev. H Symbol |hFE| hFE Min Typ 1 8 150 450 2 6 pF 5 3 3 20 60 dB K mhos 10x10-4 SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2