CPT-290 SurfaceMountableChipPhoto-transistorCPT-290Series Features 1. DevelopedasachiptypeSMDphoto- 1. 2. 2.2(L)x1.45(W)x1.1 (H)mm transistorforbothreverseandtop surfacemounting 2. Smallandsquaresize,dimensions 2.2(L)x1.45(W)x1.1(H)mm Application /Outlinedrawing 1. 2. 1. Opticaltouchpanel 2. Positiondetectingofotherequipment Position of die /Electro-opticalcharacteristics Symbol (1.4) 2.2 /Item /Lightcurrent /Collectordarkcurrent Conditions Min Typ Max V CE=5V 1EV=0.1mW/cm 2 55 VCE =5V - VCE(Sat) IC=100A 1E V=0.1mW/cm2 Saturatedvoltagebetweencollector&emitter /Peaksensitivewavelength p 2 - (0.55) 1.1 Resin Soldering terminal /Spectralefficiency / /Risetime ResponseTime /Falltime 2 Tr Tf VCE=5VI C=2mA R L=100 /Spectralwidthofhalfvalue 1/2 - 0.3 - 126 197 5 100 A nA 0.15 0.4 V - 940 - 8601060 6 6 - Unit 75 nm nm SEC SEC - deg. 1EV =950nmlR/1EV =Infraredirradianceat950nm C 1.6 IC ICEO (Ta25) 2C/2StandardforCtype Polarity E 0.3 (0.3) 1.0 1.45 Emitter mark P.C.board /Unit:mm Characteristics Ic-VCE Ic-E Ic-E Characteristics VCE=3V Ta=25C 175 Ta=25C Ic (A) 300 40 1000 250 20 200 0.3 900 1000 1100 1200 1.0 0 2 4 6 8 1000 10 12 14 -50 50 -25 VCE (V) VCC=5V R=100 Ta=25C tr tf (S) Ta=25C :VCE=5V 75 100 1 3 10 30 100 f (KHz) Directive Characteristics 40 100 LED:CL-201IR RL Output R d 30 20 10 0 10 20 30 40 50 50 60 60 70 70 50 tr 100 50 T a (C) VCC Input 5V 10 25 tf 1 1 0 Measuring circuit for response time 20mW/Sr 10 0.1 RL=1K Vcc=5V Ta=25C =CL-201IR Lighting source of CL-201IR tr/tf-RL Characteristics 100 10mW/Sr RL=510 -30 tr/rf-RL CL-201IR Combined Characteristics with CL-201IR Ic (mA) 75 0.1 E (mW/cm2) nm Wave length 100 -20 -40 0 10 120 0.2 50 100 800 RL=100 -10 0.4 100 0.1 VCE=5V 150 0.5mW/cm2 150 0 Frequency response 0 80 60 IRC-Ta IRC-Ta Characteristics Ic-VCE Characteristics (dB) 10000 Ic (A) Relative efficiency 100 IRC(%) Ta=25 Special EfficiencyCharacteristics 2 tf 10 1 5 10 RL(K) 100 Input pulse 90% 10% tr Output pulse 80 80 90 90 100 0 100 83