SEEQ Technology, Incorporated 2816A/2816AH 5516A/5516AH Timer E? 16K Electrically Erasable PROMs August 1992 Features B Military and Extended Temperature Range 55C to + 125C, Operation (Military) -40C to +85C, Operation (Extended) * OC to +70C, Operation (Commercial) End of Write Detection + Optional DATA Polling Feature @ High Endurance Write Cycles 2816A: 10,000 Cycies/Byte Minimum 5516A: 100K, 400K and 1 Milllon Cycles/Byte On-Chip Timer Automatic Erase and Write Time Out All inputs Latched by Write or Chip Enable 5 V+ 10% Power Supply Power Up/Down Protection Circuitry 150 ns max. Access Time Low Power Operation * 100 mA max. Active Current 40mA max. Standby Current JEDEC Approved Byte-Wide Pinout @ MIL-STD-883 Class B Compliant Block Diagram COLUMN ADDRESS DECODE oa Row ADDRESS OECODE As sol) ce We >] VO BUFFERS Rl re Q Cell is a trademark of SEEQ Technology, Inc. Description SEEQ's 2816A/5516A are 5V only, 2K x 8 electrically eras- able programmable read only memories (EEPROMs). EEPROMs are ideal for applications which require non- volatility andin-system data modification. The endurance, the minimum number of times that a byte may be written, is 10 thousand (K) for the 2816A, and 100K, 400K or 1 million cycles for the 5516A. The 5516As high endurance was accomplished using SEEQ's proprietary oxyntride EEPROM process and its innovative Q Cell design. The 2816A/5516A is ideal for systems that require fre- quent updates. There is an internal timer that automatically times out the write time. A separate erase cycle is not required and the minimum write enable (WE) pulse width needs to be as little as 100 ns depending on device address access time. Pin Configuration PLASTIC LEADED CHIP CARRIER TOP VIEW DUAL-IN-LINE TOP VIEW NOTE: For PLCC - Ready/Busy pin option is always connected unless otherwise specified. Pin Names A,-A,, | ADDRESSES CE CHIP ENABLE OE OUTPUT ENABLE E WRITE ENABLE DATA INPUT (WRITE OR ERASE) DATA OUTPUT (READ) SEEQ Technetegy, noerperated MD400102/A SEEQ The on-chip timer, along with the inputs being latched by a write or chip enable signal edge, frees the microcom- puter system for other tasks during the write time. The standard 2816A/5516A's write time is 10 ms, while the 2816AH/5516AH write time is a fast 2ms. Once a byte is written, itcan be read in a maximum of 150 ns. The inputs are TTL for both the byte write and read mode. Device Operation There are five operational modes (see Table 1) and, except for the chip erase mode |"), only TTL inputs are required. To write into a particular location, a TTL low is applied to write enable (WE) pin of a selected (CE low) device. This, combined with output enable (OE) being high, initiates a write cycle. During a byte write cycle, addresses are latched on the last falling edge of CE or WE. and data is latchedon the first rising edge of CE or WE. An internal timer times out the required byte write time. An automatic byte erase is performed internally in the byte write mode. DATA Polling (Optional Feature) DATA polling is a method of minimizing write times by de- termining the actual end-point of a write cycle. If areadis performed to any address while the device is still writing, itwill present the ones-complement of the last byte written. When the device has completedits write cycle, aread from the last address written will result in valid data. Thus, software can simply read from the part until the last data byte written is read correctly. Timing for a DATA polling read is the same as a normal read. Recommended Operating Conditions 2816A/2816AH 5516A/5516AH Mode Selection (Table 1) Mode CE | OF | WE vO Read Vi Vu Vin Dour Standby Via X x High Z Byte Write | V, | Vy Vie Dw Write X Vi xX High 2/D,.,, Inhibit xX X Via High Z/D oy, X: any TTL levei Absolute Maximum Stress Ratings* Temperature SHOLEQO oessecsescscassssssssessscsrssesesseatentene 68C to +150C Under Bias Military/Extended ...0cccccccceteseeseeee -65C to +135C COMMEFCIAL woe cecececeessetseeeseeseteestees -10C to +80C D.C. Voltage applied to all Inputs or Outputs with respect 0 QrOUNC .......cccceseseeseee +6.0 V to -0.5 V Undershoot/Overshoot pulse of less then 10 ns (measured at 50% point) applied to all inputs or outputs with respect to ground ..... (undershoot) -1.0 V (overshoot) + 7.0V COMMENT: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the op- erational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2816A/2816AH-150 | 2816A/2816AH-200 | 2816A/2816AH-250 | 2816A/2816AH-300 SS16A/SS16AH-150 | 5516A/5516AH-200 | 5516A/5516AH-250 | 5516A/5516AH-300 Temperature Commercial 0C to +70C 0C to +70C 0C to +70C 0C to +70C Range Extended 40C to +85C | 40C to +85C | 40C to +85C | -40C to +85C Military 55C to +125C | 55C to +4125C | -55C to +125C | ~55C to +125C Voc Supply Voltage 5V410% 5V+10% 5V410% 5V+410% Endurance and Data Retention Symbol Parameter Vaiue Units Condition N Minimum Endurance MIL-STD 883 Test 2816A 10,000 Cycles/Byte Method 1033 5516A hoo'o00 Cycles/Byte MIL-STD 883 Test , Method 1033 1,000,000 Tor Data Retention >10 Years MIL-STD 883 Test Method 1033 Notes: 1. Chip Erase is an optional mode. 2. Characterized. Not tested. Techn elegy, incerpersind MD400102/A2816A/2816AH 5516A/5516AH Power Up/Down Considerations The 2816A/55164 has internal circuitry to minimize a false write during system V,,. power up or down. This circuitry prevents writing under any one of the following conditions. 1. V,, is less than 3V 71 2. A negative Write Enable (WE) transition has not occured when V,,, is between 3 V and 5 V. Writing will also be prevented if CE or OE are in a logical state other than that specified for a byte write in the Mode Selection table. DC Operating Characteristics (Over the operating Veg and temperature range) Limits Symbol Parameter Min, Max. Units Test Condition lee Active V.,. Current 100 mA CE = OE =V,; All /O Open; Other Inputs = 5.5 V CE = OE =V,,; All YO Open; Other Inputs = 5.5 V gp Standby V,,. Current 40 mA CE = V,,, OE = V,,; All /O's Open; Other Inputs = 5.5 V 1, Input Leakage Current 10 pA Viy = 5.5 V lo Output Leakage Current -. 10 pA Voy = 5.5 V Vi Input Low Voltage -0.1 0.8 Vv Vin Input High Voltage 2.0 v Vor Output Low Voltage 0.4 V 5, = 2.1 mA Von Output High Voltage 2.4 V lou = 400 pA Capacitance |! T, = 25C, f = 1 MHz Equivalent A.C. Test Conditions Symbol | Parameter Max | Conditions Output Load: 1 TTL gate and C, = 100 pF C Input G it 6 oF VocoV Input Rise and Fall Times: < 20 ns IN put Vapacitance p IN Input Pulse Levels: 0.45 V to 2.4 V - Cour Data (I/O) Capacitance 10pF | V,,=0V Timing Measurement Reference Level: Inputs 1 Vand 2V NOTES: 1. This parameter measured only for the initial qualification and after Outputs 0.8 Vand 2 V process or design changes which may affect capacitance. SEEQ Technology, inoarperates 1-17 MD400102/A2816A/2816AH DATA OUT f ADDRESS SEEQ Read Cycle Timing 5516A/5516AH AC Characteristics Read Operation (Over the operating V,,, and temperature range) Limits 2816A/2816AH-150 | 2816A/2816AH-200 | 2816A/2816AH-250 | 2616A/2816AH-300 5516A/5516AH-150 | 5516A/5516AH-200 | 5516A/5516AH-250 | 5516A/5516AH-300 Symbo! | Parameter Min. | Max. | Min. | Max. Min. | Max.| Min.| Max. | Units tac Read Cycle Time 150 200 250 300 ns toe Chip Enable Access Time 150 200 250 300 ns tas Address Access Time 150 200 250 300 | ns fog Output Enable Access Time 70 90 90 100 ns ty CE to Output in Low Z 10 10 10 10 ns tas CE to Output in High Z 100 100 100 100 | ns torz OE to Output in Low Z 50 50 50 50 ns tonz OE to Output in High Z 100 100 100 100 | ns tol! Output Hold from Addr Change} 20 20 20 20 ns toy! CE to Power-up Time 0 0 0 0 ns tppl'! | CE to Power Down Time 50 50 50 50 | ns NOTES: 1. This parameter measured only for the initial qualification and after process or design changes which may affect capacitance. X |} t 4, >| / 2! HIGH Z Technology, incerpersied MD400102/A <3 bet 1 Op j<at yz >| tou x -_{ xX DATA VALIO x x DATA VALID } a F- i t_z pad | loc tt pp 1-182816A/2816AH 5516A/5516AH AC Characteristics Write Operation (Over the operating V,, and temperature range) Limits 2816A/AH-150 | 2816A/AH-200 | 2816A/AH-250 | 2816A/AH-300 S516A/AH-150 | 5516A/AH-200 | 5516A/AH-250| 5516A/AH-300 Symbol | Parameter Min. | Max.) Min. | Max. | Min. | Max. | Min. | Max. | Units twe Write Cycle Time 2816AH/5516AH 2 2 2 2 ms 2816A/5516A 10 10 10 10 ms tas Address Set Up Time 10 10 10 10 ns tau Address Hold Time 50 50 50 70 ns tes Write Set Up Time 0 0 0 0 ns toy Write Hold Time 0 0 0 0 ns tow CE to End of Write Input 150 150 150 150 ns toss | OE Set Up Time 10 10 10 10 ns toey | OE Hold Time 10 10 10 10 ns tye! | WE Write Pulse Width 100 150 150 150 ns tor Data Latch Time 50 50 50 50 ns toy! | Data Valid Time 1 1 1 1 us tos Data Set Up Time 50 50 50 50 ns toy Data Hold Time 0 0 0 0 ns NOTES: 1. WE is noise protected. Less than a 20 ns write pulse will not activate a write cycle. 2. Data must be valid within 1 4s maximum after the initiation of a write cycle. TTL Byte Write Cycle WE CONTROLLED WRITE CYCLE CE CONTROLLED WRITE CYCLE fad. ty __> jt two L a ZTTLTD | KZ/ pt tas m| pee tay toy tase tan tor \ ~ 7 SF \ F t _ _ tow4 CE 6 cE N / fy al a A SY wre We N KN /\ | toys he toy a . +> DATA IN x DATA VALID X DATA IN xX DATA VALID x ! . Jy Sal Fd boli, eo ton SEEQ manos erred 1-19 MD400102/AOrdering Information PACKAGE TYPE D ~Ceramic DIP N- PLCC P Plastic DIP UX - Unencapeulated Die SEEQ Technetegy, incorperated MD400102/A TEMPERATURE RANGE M--55C to +125C (Military) E -- 40 C to +85C (Extended) Q- 0 CS to +70C (Commercial) 2816A/2816AH 5516A/5516AH D M 2816 H 150 /B PART TYPE EEPROM BYTE ACCESS TIME SCREENING OPTION WRITE TIME 2K x 8 EEPROM (Biank) - 10ms 150 = 150 ns 7B ~MIL 883 CLASS B 2816A - 10K Endurance H-2ms 200 = 200 ns Screened 5516A - >10K Endurance 250 = 250 ns. (May be specified as 300 = 300 ns 100K, 400K or 1 Million Cycles of Endurance) 1-20