LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 1 of 6
2N3439U A thru 2N3440U A
Availa ble on
commercial
versions
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, JANT X,
JANTXV and JANS
DESCRIPTION
This family of 2N3439UA through 2N3 440U A high-frequency, epitaxial planar transistors
feature low saturation voltage. The UA package is hermetically sealed and provides a low
profile for minimizing board height. These devices are also available in U4, TO-5 and TO-39
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
UA Package
Also available in:
U4 package
(surface mount)
2N3439U4 – 2N3440U4
TO-5 package
(long leaded)
2N3439L – 2N3440L
TO-39 package
(leaded)
2N3439 – 2N3440
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3439UA through 2N3440UA series.
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.5 V @ IC = 50 mA.
• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.
• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliabi lity applications .
MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3439UA 2N3440UA Unit
Collector-Emitter Voltage VCEO 350 250 V
Collector-Base Voltage
V
CBO
450
300
V
Emitter-Base Voltage
V
EBO
V
Collector Current
I
C
A
Total Power Dissipation
UA
@ T
A
= +25 °C (1)
@ TC = +25 °C (2)
@ TSP = +25 oC (3) PD
5.0
2.0 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
°C
Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.
2. Derate linearly @ 28.5 mW/°C for TC > +25 °C.
3. Derate linearly @ 14 mW/°C for TSP > +25 °C.
LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 2 of 6
2N3439U A thru 2N3440U A
MECHANICAL and PACKAGING
• CASE: Hermetically sealed ceramic package.
• TERMINALS: Gold plate over nickel.
• MARKING: Manufacturer's ID, date code, part number.
• POLARITY: NPN (see package outline).
• TAPE & REEL option: Per EIA-481. Consult factory for quantities.
• WEIGHT: 0.12 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3439 UA (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package type
SYMBOLS & DEFINITIONS
Symbol
Definition
Cibo
Common-base open-circuit input capacitance.
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cutoff current, circuit between base and em itter .
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VBE
Base-emitter voltage, dc .
VCE
Collector-emitter voltage, dc.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEB
Emitter-base voltage, dc .
VEBO
Emitter-base voltage, collector open.
LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 3 of 6
2N3439U A thru 2N3440U A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
350
250
V
I
C
= 10 mA
RBB1 = 470 Ω; VBB1 = 6 V
L = 25 mH (min); f = 30 – 60 Hz
2N3439UA
2N3440UA
Collector-Emitter Cutoff Current
ICEO
2.0
2.0 µA
V
CE
= 300 V
VCE = 200 V
2N3439UA
2N3440UA
Emitter-Base Cutoff Current
VEB = 7.0 V
IEBO 10 µA
Collector-Emitter Cutoff Current
ICEX
5.0
5.0
µA
V
CE
= 450 V, V
BE
= -1.5 V
VCE = 300 V, VBE = -1.5 V
2N3439UA
2N3440UA
Collector-Base Cutoff Current
ICBO
2.0
2.0
5.0
5.0
µA
V
CB
= 360 V
VCB = 250 V
VCB = 450 V
VCB = 300 V
2N3439UA
2N3440UA
2N3439UA
2N3440UA
ON CHARACTERISTICS (1)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 20 mA, VCE = 10 V
IC = 2.0 mA, VCE = 10 V
IC = 0.2 mA, VCE = 10 V
hFE
40
30
10
160
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA VCE(sat) 0.5 V
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 4.0 mA VBE(sat) 1.3 V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 5.0 MHz |hfe| 3.0 15
Forward Current Transfer Ratio
I
C
= 5.0 mA, V
CE
= 10 V, f = 1.0 kHz hfe 25
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo 10 pF
Input Capacitance
VCB = 5.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 4 of 6
2N3439U A thru 2N3440U A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton
1.0 µs
Turn-Off Time
VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff
10 µs
SAFE OPERATING AREA (See graph belo w and also ref er ence test method 3053 of
MIL-STD-750.)
DC Tests
TC = +25 °C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 V, IC = 1.0 A
Both Types
Test 2
VCE = 350 V, IC = 14 mA
2N3439UA
Test 3
VCE = 250 V, IC = 20 mA
2N3440UA
VCE – Collector to Emitter Voltage (V)
Maximum Safe Operating graph (continuous dc)
I
C
– Collector Current (mA)
LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 5 of 6
2N3439U A thru 2N3440U A
GRAPHS
TSP (oC) (Solder Pad)
FIGURE 1
Temperature-Power Derating Curve
NOTES: Thermal Resistance Junc ti on t o Solder Pad = 70.0 oC/W
Max Finish-Alloy Temp = 175.0 oC
.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100
TIME (s)
FIGURE 2
Maximum Thermal Impedance
NOTE: TC = +25 °C, Thermal Resistance RθJSP = 70.0 °C /W, Pdi ss = 2 W.
DC Operation Maximum Rating (W)
THETA (oC/W)
LDS-0022-3, Rev. 1 (111683) ©2011 Microsemi Corporation Page 6 of 6
2N3439U A thru 2N3440U A
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension "CH" controls the overall package thickness. When a
window lid is used, dimension "CH" must increase by a minimum
of .010 inch (0.254 mm) and a maximum of .040 inch (1.020
mm).
4. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer's option, from that shown on the drawing.
5. Dimensions " L W2" minimu m and "L3" minim um and the
appropriate castellation length define an unobstructed three-
dimensional space traversing all of the ceramic layers in which a
castellation was designed. (Castellations are required on bottom
two layers, optional on top ceramic layer.) Dimension " LW2"
maximum and "L3" maximum define the maximum width and
depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder
dipping.
6. The co-planarity deviation of all terminal contact points, as
defined by the device seating plane, shall not exceed .006 inch
(0.15mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to
Φx symbology.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
BL
.215
.225
5.46
5.71
BL2
.225
5.71
BW
.145
.155
3.68
3.93
BW2
.155
3.93
CH
.061
.075
1.55
1.90
3
L3
.003
.007
0.08
0.18
5
LH
.029
.042
0.74
1.07
LL1
.032
.048
0.81
1.22
LL2
.072
.088
1.83
2.23
LS
.045
.055
1.14
1.39
LW
.022
.028
0.56
0.71
LW2
.006
.022
0.15
0.56
5
Pin no.
1
2
3
4
Transistor
Collector
Emitter
Base
N/C