APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
www.microsemi.com 1
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Q1
S1
OUT
0/VBUS
CR2
VB US
G1
OUT
G1
S1
0/VBUSVBUS
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 372
ID Continuous Drain Current Tc = 80°C 278
IDM Pulsed Drain current 1488
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 5 mΩ
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 200V
RDSon = 4mΩ typ @ Tj = 25°C
ID = 372A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstandi ng perfor mance at hi gh freque nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
B
uc
k
choppe
r
MOSFET Power Module
APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C 500
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 186A 4 5
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 28.9
Coss Output Capacitance 9.32
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.58
nF
Qg Total gate Charge 560
Qgs Gate – Source Charge 212
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 372A 268
nC
Td(on) Tur n-on Delay Ti me 32
Tr Rise Time 64
Td(off) Turn-off Delay Time 88
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 372A
RG = 1.2Ω 116
ns
Eon Turn-on Switching Energy 3396
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 133V
ID = 372A, RG = 1.2Ω 3716
µJ
Eon Turn-on Switching Energy 3744
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 133V
ID = 372A, RG = 1.2Ω 3944
µJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 750 µA
IF DC Forward Current Tc = 80°C 300 A
IF = 300A 1 1.1
IF = 600A 1.4 VF Diode Forward Voltage
IF = 300A Tj = 125°C 0.9
V
Tj = 25°C 60
trr Reverse Recovery Time
Tj = 125°C 110
ns
Tj = 25°C 600
Qrr Reverse Recovery Charge
IF = 300A
VR = 133V
di/dt = 600A/µs
Tj = 125°C 2520
nC
APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
www.microsemi.com 3
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.1
RthJC Junction to Case Thermal Resistance Diode 0.2
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
VGS=15V
9V
0
500
1000
1500
2000
2500
3000
0 4 8 1216202428
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
012345678910
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS (on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0 100 200 300 400 500 600
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 186A
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20SKM04G
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Rev 2 July, 2006
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0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 186A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
1
10
100
1000
10000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
Single pulse
TJ=150°C
TC=25°C
limited by
RD
So
n
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
14
0 80 160 240 320 400 480 560 640
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=372A
TJ=25°C
APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0 100 200 300 400 500 600
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600
ID, Drain Current (A)
tr and tf (ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
Eoff
0
2
4
6
8
0 100 200 300 400 500 600
ID, Drain Current (A)
Eon and Eoff (mJ)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
2
4
6
8
10
12
0 2.5 5 7.5 10 12.5
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=372A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
50 100 150 200 250 300 350
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
M icros e mi re serves the right to c ha nge , without notice , t he s pe cifications and info rma tio n co nta i ne d he re in
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APTM20SKM04G
APTM20SKM04G
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Rev 2 July, 2006
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