A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet 1200 V / 300 A VINcoDUAL E3 Features VINco E3 housing IGBT M7 technology with low V CEsat and improved EMC behavior New SoLid Cover Technology for higher reliability Industry standard housing Pressfit pin and preapplied phasechange Thermal Interface Material available Schematic Target applications Industrial Drives Power Supply UPS Types A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 315 A 600 A 656 W Half-Bridge Switch Collector-emitter voltage Collector current VCES IC Tj = Tjmax Ts = 80 C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES 20 V Maximum junction temperature Tjmax 175 C Copyright Vincotech Ts = 80 C 1 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 259 A 600 A 473 W Half-Bridge Diode Peak repetitive reverse voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80 C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum junction temperature Tjmax 175 C Storage temperature Tstg -40...+125 C Operation temperature under switching condition Tjop -40...(Tjmax - 25) C tp = 2 s 6000 V tp = 1 min 2500 V Creepage distance 18,1 mm Clearance 16,2 mm Tj = Tjmax Ts = 80 C Module Properties Thermal Properties Isolation Properties DC Test Voltage* Isolation voltage Visol AC Voltage Comparative Tracking Index CTI > 200 *100 % tested in production Copyright Vincotech 2 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [C] Min Typ Unit Max Half-Bridge Switch Static Gate-emitter threshold voltage Collector-emitter saturation voltage VGE(th) VGE = VCE 0,03 15 VCEsat 300 6 6,6 25 25 5,4 1,61 2,05 125 1,82 150 1,91 V V Collector-emitter cut-off current ICES 0 1200 25 330 A Gate-emitter leakage current IGES 20 0 25 1500 nA Internal gate resistance rg none Input capacitance Cies 63000 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg 0 10 25 2100 pF 840 15 600 300 25 3800 nC 0,14 K/W Thermal Thermal resistance junction to sink Rth(j-s) phase-change material = 3,4 W/mK Dynamic Turn-on delay time Rise time td(on) tr Rgoff = 0,5 Rgon = 0,5 Turn-off delay time td(off) 15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf Eon QrFWD = 35 C QrFWD = 50 C QrFWD = 56,3 C Eoff 3 600 307 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 193 196 198 14 16 16 238 266 273 72 104 101 4,720 6,736 7,471 19,246 26,994 29,955 ns mWs 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [C] Min Unit Typ Max 25 1,82 2,05 125 1,96 150 1,97 Half-Bridge Diode Static Forward voltage Reverse leakage current 300 VF 1200 IR 25 V 180 A Thermal Thermal resistance junction to sink Rth(j-s) phase-change material = 3,4 W/mK 0,20 K/W Dynamic Peak recovery current IRRM Reverse recovery time trr Recovered charge Qr Reverse recovered energy Erec Peak rate of fall of recovery current di/dt = 26488 A/s di/dt = 21285 A/s 15 di/dt = 20306 A/s (dirf/dt)max 600 307 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 519 540 557 167 222 232 35,027 49,997 56,250 18,021 25,987 29,947 8311 8859 8763 A ns C mWs A/s Thermistor Rated resistance R Deviation of R100 R/R Power dissipation 25 R100 = 493 100 P Power dissipation constant 5 -5 k +5 % 25 245 mW 25 1,4 mW/K B-value B(25/50) Tol. 2 % 25 3375 K B-value B(25/100) Tol. 2 % 25 3437 K Vincotech NTC Reference Copyright Vincotech K 4 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switch Characteristics figure 1. IGBT figure 2. IGBT Typical output characteristics Typical out put charact eristics I C = f(V CE) I C = f(V CE) 1000 I C (A) I C (A) 1000 VGE : 7V 8V 9V 800 800 10 V 11 V 12 V 13 V 14 V 15 V 600 600 16 V 17 V 400 400 200 200 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 s V GE = 15 V 25 T j: C tp = 250 125 C Tj = 150 150 C V GE from 7 V to 17 V in steps of 1 V figure 3. IGBT s C figure 4. IGBT Typical transf er charact erist ics Transient t hermal impedance as f unction of pulse duration I C = f(V GE) Z th(j-s) = f(t p) 300 Z t h(j h(j--s)(K/W) I C (A) 100 250 10-1 200 150 0,5 10-2 100 0,2 0,1 0,05 0,02 50 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 s V CE = 10 V 25 T j: C D = 125 C Copyright Vincotech 100 101 t p (s) 102 tp / T R th(j-s) = 150 C 10-1 0,14 K/W IGBT thermal model values 5 R (K/W) 2,06E-02 (s) 6,07E+00 2,32E-02 1,29E+00 3,01E-02 2,03E-01 4,46E-02 4,88E-02 1,79E-02 1,30E-02 8,61E-03 4,01E-04 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switch Characteristics figure 5. IGBT figure 5. IGBT Gate volt age vs gate charge Saf e operating area V GE = f(Q G) I C = f(V CE) 1000 I C (A) V G E (V) 20 15 600 V 100 10 10 5 0 1 -5 0,1 -10 -15 -2000 0,01 -1000 0 1000 2000 3000 1 4000 10 100 Q G (nC) 10000 V C E (V) I C= 300 A D = single pulse V GE = 15 V Ts = 80 C V CC = 600 V V GE = Tj = 15 T jmax V Copyright Vincotech 1000 6 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Diode Characteristics figure 1. FWD figure 2. FWD Typical f orward charact erist ics Transient t hermal impedance as a f unct ion of pulse widt h I F = f(V F) Z th(j-s) = f(t p) 300 Z t h(j h(j--s) (K/W) IF (A) 100 250 200 10-1 150 0.5 100 0.2 0.1 0.05 0.02 50 0.01 0.005 0 10-2 0 0 0,5 1 1,5 10-4 2 10-3 10-2 VF (V) tp = 250 s 25 T j: 10-1 100 101 102 t p (s) D = tp / T 125 C C R th(j-s) = 0,20 150 C FWD thermal model values R (K/W) K/W 2,04E-02 (s) 5,59E+00 2,34E-02 1,13E+00 3,69E-02 2,01E-01 6,34E-02 4,50E-02 3,60E-02 1,31E-02 7,69E-03 1,56E-03 1,29E-02 3,42E-04 Thermistor Characteristics figure 1. Typical Thermistor resistance values Thermistor Typical NTC characteristic as a function of temperature R = f(T ) NTC-typical temperature characteristic R () 5000 4000 3000 2000 1000 0 25 50 75 100 125 T (C) Copyright Vincotech 7 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 1. IGBT figure 2. Typical swit ching energy losses as a f unction of collector current E = f(R g) E = f(I C) 40 E ( mWs) E (mWs) IGBT Typical swit ching energy losses as a f unct ion of gate resistor Eoff Eoff 30 80 Eon Eon 60 Eo n E o ff 20 40 Eoff Eoff Eo ff Eon 10 20 Eon Eo n 0 0 0 100 200 300 400 500 600 0 I C (A) 25 With an induc tive load at 600 V V CE = V GE = 15 V R gon = 0,5 R goff = 0,5 C 125 C T j: 2 4 150 C figure 3. FWD V GE = 15 V IC = 307 A 6 figure 4. FWD E rec = f(R g) E ( mWs) E rec = f(I c) Erec 35 Erec 30 10 150 C Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) R g ( ) C 125 C T j: Typical reverse recovered energy loss as a f unction of collector current 40 8 25 With an inductive load at 600 V V CE = 35 30 25 Erec 25 20 20 15 Erec 15 Erec 10 10 Erec 5 5 0 0 0 100 200 With an induc tive load at 600 V V CE = 15 V V GE = R gon = 0,5 Copyright Vincotech 300 400 25 T j: 500 I C (A) 0 600 C 2 4 With an inductive load at 600 V V CE = 15 V V GE = 125 C 150 C IC= 8 307 6 8 25 T j: r g () 10 C 125 C 150 C A 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 5. IGBT figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(R g) 1 td(on) t ( s) t ( s) 1 td(off ) d(on) ttd(off ) 0,1 tr tf tf 0,1 tr 0,01 0,01 0,001 0 100 200 300 400 500 600 0 I C (A) (A) With an induc tive load at 150 C Tj= 600 V V CE = 2 4 6 8 r g () 10 With an inductive load at 150 C Tj= 600 V V CE = V GE = 15 V V GE = 15 V R gon = 0,5 IC = 307 A R goff = 0,5 figure 7. FWD figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,3 0,8 t rr (s) t rr (s) Typical reverse recovery t ime as a f unction of collector current trr trr 0,6 trr trr trr 0,2 trr 0,4 0,1 0,2 0 0 0 100 200 300 400 500 600 0 I C (A) At 600 V V GE = 15 V R gon = 0,5 V CE= Copyright Vincotech 25 T j: 2 4 6 8 10 R g on () 600 V 125 C C V GE = 15 V 150 C IC= 307 A At 9 V CE = 25 T j: C 125 C 150 C 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 9. FWD figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 80 Q r (C) Q r ( C) Typical recovered charge as a f unction of collector current Qr 60 50 Qr 60 Qr 40 Qr 40 Qr 30 Qr 20 20 10 At 0 0 0 100 200 300 400 500 600 0 2 4 6 8 I C (A) 600 V V GE = 15 V R gon = 0,5 At V CE = 25 T j: 600 V 125 C C V GE = 15 V 150 C I C= 307 A At figure 11. FWD VCE= 25 C 125 C T j: 150 C figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 700 10 R g o n () I R M (A) I R M (A) 700 I RM 600 600 I RM IRM 500 500 400 400 300 300 200 200 100 100 0 0 IRM 0 At I RM IRM 100 200 600 V V GE = 15 V R gon = 0,5 V CE = Copyright Vincotech 300 400 25 T j: 500 I C (A) 0 600 2 4 6 8 10 R g o n () C At V CE = 600 V 125 C V GE = 15 V 150 C IC= 307 A 10 25 T j: C 125 C 150 C 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 13. FWD figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /d t (A/ (A/ s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current 12000 d i /dt (A/ (A/s) s) di F / dt dir r /dt 9000 35000 di F / dt di r r/ dt 30000 25000 20000 6000 15000 10000 3000 5000 0 0 0 100 200 300 400 500 0 600 2 4 6 8 I C (A) 600 V V GE = 15 V R gon = 0,5 At V CE = 25 T j: 600 V 125 C C V GE = 15 V 150 C I C= 307 A At figure 15. V CE = 25 T j: 10 R g o n () C 125 C 150 C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 700 I C MAX I c CHIP 600 500 MODULE 400 Ic 300 V CE MAX 200 100 0 0 200 400 600 800 1000 1200 1400 V C E (V) At Tj = 175 C R gon = 0,5 R goff = 0,5 Copyright Vincotech 11 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Definitions General conditions = 125 C = 0,5 Tj R gon = R goff figure 1. IGBT 0,5 figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 300 125 tdoff % % IC 250 100 VCE 90% VGE 90% VGE 75 200 150 IC 50 tEoff VCE VGE 100 tdon 25 IC 1% 50 VCE VGE 10% 0 ICV10% CE 3% tEon 0 -25 -0,1 -50 0,2 0,5 0,8 1,1 1,4 3,9 4,1 4,3 4,5 4,7 t (s) t (s) V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 303 A I C (100%) = 303 A t doff = t Eoff = 0,266 0,907 s s t don = t Eon = 0,196 0,280 s s figure 3. IGBT figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 175 125 fitted % % IC 150 100 IC 90% IC 125 75 100 VCE IC 60% IC 90% 50 75 tr IC 40% 50 25 IC10% VCE 0 25 tf IC 10% 0 -25 0,2 0,3 0,4 0,5 0,6 0,7 -25 4,18 0,8 t ( s) 4,19 4,2 4,21 4,23 t (s) V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 303 A I C (100%) = 303 A tf= 0,104 s tr = 0,016 s Copyright Vincotech 4,22 12 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 5. IGBT figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 150 % Poff 100 % IC 1% Pon 125 Eoff Eon 100 75 75 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -25 -25 0 0,3 0,6 0,9 3,9 1,2 4,1 4,3 P off (100%) = 181,55 kW P on (100%) = 181,55 kW E off (100%) = 26,99 mJ E on (100%) = 6,74 mJ t Eoff = 0,91 s t Eon = 0,28 s figure 7. 4,5 4,7 t ( s) t (s) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % IF 100 trr 50 VF 0 IRRM 10% -50 fitted -100 -150 IRRM 90% IRRM 100% -200 4,1 4,2 4,3 4,4 4,5 4,6 4,7 t (s) V F (100%) = 600 I F (100%) = 303 A I RRM (100%) = -540 A t rr = 0,222 s Copyright Vincotech V 13 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Half-Bridge Switching Characteristics figure 8. FWD figure 9. Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr) FWD Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec ) 175 150 % IF % Qr 150 100 tQr 50 125 Erec 100 0 75 tErec -50 50 Prec -100 25 -150 0 -200 4,1 4,2 4,3 4,4 4,5 4,6 4,7 -25 4,8 4,2 t (s) 4,3 4,4 4,5 4,6 4,7 4,8 t (s) I F (100%) = 303 A P rec (100%) = 181,55 kW Q r (100%) = 49,99 C E rec (100%) = 25,98 mJ t Qr = 0,44 s t Erec = 0,44 s 160 Copyright Vincotech 14 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Ordering Code & Marking Version without thermal paste with solder pins with thermal paste with solder pins Ordering Code A0-VS122PA300M7-L757F70 A0-VS122PA300M7-L757F70-/3/ without thermal paste with Press-fit with thermal paste with Press-fit pins A0-VP122PA300M7-L757F70T A0-VP122PA300M7-L757F70T-/3/ Text NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV W WYY UL VIN LLLLL SSSS Datamatrix Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS W WYY Outline Pin table [mm] Pin X Y 1 7,24 -0,45 Function Therm1 2 11,06 -0,45 Therm2 3 60,58 -0,45 G12 4 64,4 -0,45 S12 5 87,26 -0,45 C12 6 - - Ph 7 - - Ph 8 37,72 57,95 G11 9 33,92 57,95 S11 10 - - DC- 11 - - DC+ Copyright Vincotech 15 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Pinout Identification ID Component Voltage Current Function T11 , T12 IGBT 1200 V 300 A Half-Bridge Switch D11 , D12 FWD 1200 V 300 A Half-Bridge Diode Rt Thermistor Copyright Vincotech Comment Thermistor 16 06 Apr. 2017 / Revision 1 A0-VS122PA300M7-L757F70 A0-VP122PA300M7-L757F70T datasheet Packaging instruction Standard packaging quantity (SPQ) 24 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for VINco E3 packages see vincotech.com website. Package data Package data for VINco E3 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: A0-VS122PA300M7-L757F70-D1-14 06 Apr. 2017 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together "information") are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader's sole responsibility to test and determine the suitability of the information and the product for reader's intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 06 Apr. 2017 / Revision 1