A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 1 Copyright Vincotech
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
VINcoDUAL E3 1200 V / 300 A
● A0-VS122PA300M7-L757F70
● A0-VP122PA300M7-L757F70T
● IGBT M7 technology with low V
CEsat
and improved EMC behavior
● New SoLid Cover Technology for higher reliability
● Industrial Drives
● UPS
● Industry standard housing
● Pressfit pin and preapplied phasechange
VINco E3 housing
Schematic
Features
Target applications
Types
● Power Supply
● Thermal Interface Material available
Half-Bridge Switch
Collector-emitter voltage V
CES
1200 V
Collector current I
C
T
j
= T
jmax
T
s
= 80 °C 315 A
Repetitive peak collector current I
CRM
t
p
limited by T
jmax
600 A
Total power dissipation P
tot
T
j
= T
jmax
T
s
= 80 °C 656 W
Gate-emitter voltage V
GES
±20 V
Maximum junction temperature T
jmax
175 °C
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 2 Copyright Vincotech
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
Half-Bridge Diode
Peak repetitive reverse voltage V
RRM
1200 V
Continuous (direct) forward current I
F
T
j
= T
jmax
T
s
= 80 °C 259 A
Repetitive peak forward current I
FRM
600 A
Total power dissipation P
tot
T
j
= T
jmax
T
s
= 80 °C 473 W
Maximum junction temperature T
jmax
175 °C
Module Properties
Thermal Properties
Storage temperature T
stg
-40…+125 °C
Operation temperature under switching condition T
jop
-40…(T
jmax
- 25) °C
Isolation Properties
Isolation voltage V
isol
DC Test Voltage* t
p
= 2 s 6000 V
AC Voltage t
p
= 1 min 2500 V
Creepage distance 18,1 mm
Clearance 16,2 mm
Comparative Tracking Index CTI > 200
*100 % tested in production
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 3 Copyright Vincotech
Characteristic Values
Parameter Symbol Conditions Value Unit
V
GE
[V]
V
GS
[V]
V
CE
[V]
V
DS
[V]
V
F
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C] Min Typ Max
Half-Bridge Switch
Static
Gate-emitter threshold voltage V
GE(th)
V
GE
= V
CE
0,03 25 5,4 6 6,6 V
Collector-emitter saturation voltage V
CEsat
15 300
25 1,61 2,05
V
125 1,82
150 1,91
Collector-emitter cut-off current I
CES
0 1200 25 330 A
Gate-emitter leakage current I
GES
20 0 25 1500 nA
Internal gate resistance r
g
none Ω
Input capacitance C
ies
0 10 25
63000
pF Output capacitance C
oes
2100
Reverse transfer capacitance C
res
840
Gate charge Q
g
±15 600 300 25 3800 nC
Thermal
Thermal resistance junction to sink R
th(j-s)
phase-change
material
λ = 3,4 W/mK
0,14 K/W
Dynamic
Turn-on delay time t
d(on)
R
goff
= 0,5 Ω
±15 600 307
25 193
ns
125 196
150 198
Rise time t
r
25 14
125 16
150 16
Turn-off delay time t
d(off)
R
gon
= 0,5 Ω 25 238
125 266
150 273
Fall time t
f
25 72
125 104
150 101
Turn-on energy (per pulse) E
on
Q
rFWD
= 35 µC 25 4,720
mWs
Q
rFWD
= 50 µC 125 6,736
Q
rFWD
= 56,3 µC 150 7,471
Turn-off energy (per pulse) E
off
25 19,246
125 26,994
150 29,955
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 4 Copyright Vincotech
Characteristic Values
Parameter Symbol Conditions Value Unit
V
GE
[V]
V
GS
[V]
V
CE
[V]
V
DS
[V]
V
F
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C] Min Typ Max
Half-Bridge Diode
Static
Forward voltage V
F
300
25 1,82 2,05
V 125 1,96
150 1,97
Reverse leakage current I
R
1200 25 180 A
Thermal
Thermal resistance junction to sink R
th(j-s)
phase-change
material
λ = 3,4 W/mK
0,20 K/W
Dynamic
Peak recovery current I
RRM
±15 600 307
25 519
A
125 540
150 557
Reverse recovery time t
rr
25 167
ns 125 222
150 232
Recovered charge Q
r
di/dt = 26488 A/µs
25 35,027
µC
di/dt = 21285 A/µs
125 49,997
di/dt = 20306 A/µs
150 56,250
Reverse recovered energy E
rec
25 18,021
mWs 125 25,987
150 29,947
Peak rate of fall of recovery current (di
rf
/dt)
max
25 8311
A/s
125 8859
150 8763
Thermistor
Rated resistance R 25 5 kΩ
Deviation of R
100
Δ
R/R
R
100
= 493 Ω 100 -5 +5 %
Power dissipation P 25 245 mW
Power dissipation constant 25 1,4 mW/K
B-value B
(25/50)
Tol. ±2 % 25 3375 K
B-value B
(25/100)
Tol. ±2 % 25 3437 K
Vincotech NTC Reference K
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 5 Copyright Vincotech
Half-Bridge Switch Characteristics
figure 1. IGBT figure 2. IGBT
Typical output characteristics Typical out put characteristics
I
C
= f(V
CE
) I
C
= f(V
CE
)
t
p
= 250 µs 25 °C t
p
= 250 µs
V
GE
= 15 V 125 °C T
j
= 150 °C
150 °C V
GE
from 7 V to 17 V in steps of 1 V
figure 3. IGBT figure 4. IGBT
Typical transf er charact eristics Transient t hermal impedance as f unction of pulse duration
I
C
= f(V
GE
) Z
th(j-s)
= f(t
p
)
t
p
= 100 µs 25 °C D = t
p
/ T
V
CE
= 10 V 125 °C R
th(j-s)
= 0,14 K/W
150 °C
R
(K/W)
τ
(s)
2,06E-02 6,07E+00
2,32E-02 1,29E+00
3,01E-02 2,03E-01
4,46E-02 4,88E-02
1,79E-02 1,30E-02
8,61E-03 4,01E-04
T
j
:
T
j
:
IGBT thermal model values
0
50
100
150
200
250
300
0 2 4 6 8 10 12
I
I
I
I
C
C
C
C
(A)
(A)
(A)
(A)
V
VV
V
G E
G E G E
G E
(V)
(V)(V)
(V)
0
200
400
600
800
1000
012345
I
I
I
I
C
C
C
C
(A)
V
VV
V
C E
C EC E
C E
(V)
0
200
400
600
800
1000
012345
I
I
I
I
C
C
C
C
(A)
V
VV
V
C E
C EC E
C E
(V)
7 V
8 V
9 V
10 V
11 V
16 V
17 V
V
GE
:
0,5
0,2
0,1
0,02
0,01
0,005
0
Z
Z
Z
Z
t h (j
t h (j
t h (j
t h (j-
-
-
-s)
s)
s)
s)
(K/W)
t
tt
t
p
pp
p
(s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 6 Copyright Vincotech
Half-Bridge Switch Characteristics
figure 5. IGBT figure 5. IGBT
Gate voltage vs gate charge Safe operating area
V
GE
= f(Q
G
)I
C
= f(V
CE
)
I
C
= 300 A D = single pulse
V
GE
= ±15 V T
s
= 80 ºC
V
CC
= 600 V V
GE
= ±15 V
T
j
=T
jmax
600 V
-15
-10
-5
0
5
10
15
20
-2000 -1000 0 1000 2000 3000 4000
V
V
V
V
G E
G E
G E
G E
(V)
Q
QQ
Q
G
GG
G
(nC)
0,01
0,1
1
10
100
1000
1 10 100 1000 10000
I
I
I
I
C
C
C
C
(A)
V
VV
V
C E
C EC E
C E
(V)
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 7 Copyright Vincotech
Half-Bridge Diode Characteristics
figure 1. FWD figure 2. FWD
Typical forward characterist ics Transient t hermal impedance as a f unct ion of pulse width
I
F
= f(V
F
)Z
th(j-s)
= f(t
p
)
t
p
= 250 µs 25 °C D = t
p
/ T
125 °C R
th(j-s)
= 0,20 K/W
150 °C FWD thermal model values
R (K/W)
τ
(s)
2,04E-02 5,59E+00
2,34E-02 1,13E+00
3,69E-02 2,01E-01
6,34E-02 4,50E-02
3,60E-02 1,31E-02
7,69E-03 1,56E-03
1,29E-02 3,42E-04
T
j
:
0
50
100
150
200
250
300
0 0,5 1 1,5 2
I
F
(A)
V
F
(V)
Z
Z
Z
Z
t h (j
t h (j
t h (j
t h (j
-
-
-
-
s)
s)
s)
s)
(K/W)
t
tt
t
p
pp
p
(s)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
Thermistor Characteristics
figure 1. Thermistor Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
0
1000
2000
3000
4000
5000
25 50 75 100 125
R (Ω)
T(°C)
NTC-typical temperature characteristic
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 8 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 1. IGBT figure 2. IGBT
Typical switching energy losses as a function of collector current Typical swit ching energy losses as a funct ion of gate resistor
E = f(I
C
)E = f(R
g
)
With an inductive load at 25 °C With an inductive load at 25 °C
V
CE
=600 V T
j
:125 °C V
CE
=600 V T
j
:125 °C
V
GE
=±15 V 150 °C V
GE
=±15 V 150 °C
R
gon
=0,5 Ω I
C
= 307 A
R
goff
= 0,5 Ω
figure 3. FWD figure 4. FWD
Typical reverse recovered energy loss as a function of collector current Typical reverse recovered energy loss as a function of gate resist or
E
rec
= f(I
c
)E
rec
= f(R
g
)
With an inductive load at 25 °C With an inductive load at 25 °C
V
CE
=600 V T
j
: 125 °C V
CE
=600 V T
j
:125 °C
V
GE
=±15 V 150 °C V
GE
=±15 V 150 °C
R
gon
=0,5 Ω I
C
=307 A
E
rec
E
rec
E
rec
0
5
10
15
20
25
30
35
40
0 100 200 300 400 500 600
E
E
E
E
(mWs)
(mWs)
(mWs)
(mWs)
I
II
I
C
C C
C
(A)
(A)(A)
(A)
E
rec
E
rec
E
rec
0
5
10
15
20
25
30
35
0 2 4 6 8 10
E
E
E
E
(mWs)
(mWs)
(mWs)
(mWs)
r
rr
r
g
g g
g
(
((
(
Ω)
Ω)Ω)
Ω)
E
EE
E
on
on on
on
E
on
E
on
E
EE
E
off
off off
off
E
off
E
off
0
10
20
30
40
0 100 200 300 400 500 600
E
E
E
E
(mWs)
(mWs)
(mWs)
(mWs)
I
II
I
C
C C
C
(A)
(A)(A)
(A)
E
off
E
on
E
on
on o n
on
E
off
E
on
E
off
offo ff
off
0
20
40
60
80
0 2 4 6 8 10
E
E
E
E
(mWs)
(mWs)
(mWs)
(mWs)
R
RR
R
g
g g
g
(
((
(
Ω)
Ω)Ω)
Ω)
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 9 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 5. IGBT figure 6. IGBT
Typical switching t imes as a funct ion of collector current Typical swit ching times as a f unction of gate resistor
t = f(I
C
)t = f(R
g
)
With an inductive load at With an inductive load at
T
j
= 150 °C T
j
= 150 °C
V
CE
=600 V V
CE
=600 V
V
GE
=±15 V V
GE
=±15 V
R
gon
=0,5 Ω I
C
= 307 A
R
goff
= 0,5 Ω
figure 7. FWD figure 8. FWD
Typical reverse recovery time as a f unction of collector current Typical reverse recovery time as a funct ion of IGBT turn on gate resistor
t
rr
= f(I
C
)t
rr
= f(R
gon
)
At V
CE
=
600 V 25 °C At V
CE
=
600 V 25 °C
V
GE
=±15 V T
j
:125 °C V
GE
=±15 V T
j
:125 °C
R
gon
=0,5 Ω 150 °C I
C
=307 A 150 °C
t
d(off )
t
f
t
d(on)
t
r
0,001
0,01
0,1
1
0 100 200 300 400 500 600
t
t
t
t
(
(
(
(
μ
μ
μ
μ
s)
s)
s)
s)
I
II
I
C
C C
C
(A
(A(A
(A
)
))
)
t
d( off )
t
f
t
d(on)
t
r
0,01
0,1
1
0246810
t
t
t
t
(
(
(
(
μ
μ
μ
μ
s)
s)
s)
s)
r
rr
r
g
g g
g
(
((
(
Ω)
Ω)Ω)
Ω)
t
rr
t
rr
t
rr
0
0,2
0,4
0,6
0,8
0 2 4 6 8 10
t
t
t
t
rr
rr
rr
rr
(
(
(
(
μ
μ
μ
μ
s)
s)
s)
s)
R
RR
R
g o n
g o n g o n
g o n
(
((
(
Ω)
Ω)Ω)
Ω)
t
rr
t
rr
t
rr
0
0,1
0,2
0,3
0 100 200 300 400 500 600
t
t
t
t
rr
rr
rr
rr
(
(
(
(
μ
μ
μ
μ
s)
s)
s)
s)
I
II
I
C
CC
C
(A)
(A)(A)
(A)
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 10 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 9. FWD figure 10. FWD
Typical recovered charge as a function of collector current Typical recoved charge as a function of IGBT turn on gate resistor
Q
r
= f(I
C
)Q
r
= f(R
gon
)
At
At V
CE
=
600 V 25 °C At V
CE
=
600 V 25 °C
V
GE
=±15 V T
j
:125 °C V
GE
= ±15 V T
j
:125 °C
R
gon
=0,5 Ω 150 °C I
C
=307 A 150 °C
figure 11. FWD figure 12. FWD
Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a function of IGBT turn on gate resist or
I
RM
= f(I
C
)I
RM
= f(R
gon
)
At V
CE
=
600 V 25 °C At V
CE
=
600 V 25 °C
V
GE
=±15 V T
j
:125 °C V
GE
= ±15 V T
j
:125 °C
R
gon
=0,5 Ω 150 °C I
C
=307 A 150 °C
I
RM
I
RM
I
RM
0
100
200
300
400
500
600
700
0246810
I
I
I
I
R M
R M
R M
R M
(A)
(A)
(A)
(A)
R
RR
R
go n
go n g o n
go n
(
((
(
Ω)
Ω)Ω)
Ω)
Q
QQ
Q
r
r r
r
Q
r
Q
r
0
10
20
30
40
50
60
0 2 4 6 8 10
Q
Q
Q
Q
r
r
r
r
(µC)
(µC)
(µC)
(µC)
R
RR
R
go n
go n go n
go n
(
((
(
Ω)
Ω)Ω)
Ω)
I
II
I
RM
RMR M
RM
I
RM
I
RM
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
I
I
I
I
R M
R M
R M
R M
(A)
(A)
(A)
(A)
I
II
I
C
C C
C
(A)
(A)(A)
(A)
Q
r
Q
r
Q
r
0
20
40
60
80
0 100 200 300 400 500 600
Q
Q
Q
Q
r
r
r
r
(
(
(
(
μ
μ
μ
μ
C)
C)
C)
C)
I
II
I
C
C C
C
(A)
(A)(A)
(A)
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 11 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 13. FWD figure 14. FWD
Typical rate of fall of f orward and reverse recovery current as a function of collector current Typical rate of f all of f orward and reverse recovery current as a function of IGBT turn on gate resist or
di
F
/dt,di
rr
/dt = f(Ic) di
F
/dt,di
rr
/dt = f(Rg)
At V
CE
=
600 V 25 °C At V
CE
=
600 V 25 °C
V
GE
=±15 V T
j
:125 °C V
GE
= ±15 V T
j
:125 °C
R
gon
=0,5 Ω 150 °C I
C
=307 A 150 °C
0
5000
10000
15000
20000
25000
30000
35000
0 2 4 6 8 10
d
d
d
d
i
i
i
i
/d
/d
/d
/d
t
t
t
t
(A/
(A/
(A/
(A/
µ
µ
µ
µ
s)
s)
s)
s)
R
RR
R
g o n
g o n g on
g o n
(
((
(
Ω)
Ω)Ω)
Ω)
d
i
ii
i
F
FF
F
/
//
/
d
t
tt
t
d
i
ii
i
r r
r rr r
r r
/
//
/
d
t
tt
t
0
3000
6000
9000
12000
0 100 200 300 400 500 600
d
d
d
d
i
i
i
i
/d
/d
/d
/d
t
t
t
t
(A/
(A/
(A/
(A/
µ
s)
s)
s)
s)
I
II
I
C
C C
C
(A)
(A)(A)
(A)
d
i
ii
i
F
FF
F
/
//
/
d
t
tt
t
d
i
ii
i
r r
r rr r
r r
/
//
/
d
t
tt
t
figure 15. IGBT
Reverse bias safe operat ing area
I
C
= f(V
CE
)
At
T
j
= 175 °C
Rgon = 0,5 Ω
Rgoff = 0,5 Ω
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
I
I
I
I
C
C
C
C
(A)
(A)
(A)
(A)
V
VV
V
C E
C E C E
C E
(V)
(V)(V)
(V)
I
II
I
C MAX
C MAXC MAX
C MAX
V
V
V
V
CE
CE
CE
CE
MAX
MAX
MAX
MAX
I
I
I
I
c
c
c
cMODULE
MODULE
MODULE
MODULE
I
I
I
I
c
c
c
c
CHIP
CHIP
CHIP
CHIP
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 12 Copyright Vincotech
Half-Bridge Switching Definitions
T
j
125 °C
R
gon
0,5 Ω
R
goff
0,5 Ω
figure 1. IGBT figure 2. IGBT
Turn-off Switching W avef orms & def inition of t dof f , tEof f (tEof f = integrating time for Eoff ) Turn-on Switching Wavef orms & definition of t don, tEon (tEon = integrating time for Eon)
V
GE
(0%) = -15 V V
GE
(0%) = -15 V
V
GE
(100%) = 15 V V
GE
(100%) = 15 V
V
C
(100%) = 600 V V
C
(100%) = 600 V
I
C
(100%) = 303 A I
C
(100%) = 303 A
t
doff
= 0,266 µs t
don
= 0,196 µs
t
Eoff
=0,907 µs t
Eon
=0,280 µs
figure 3. IGBT figure 4. IGBT
Turn-off Switching W avef orms & def inition of t f Turn-on Switching Wavef orms & definition of t r
V
C
(100%) = 600 V V
C
(100%) = 600 V
I
C
(100%) = 303 A I
C
(100%) = 303 A
t
f
=0,104 µst
r
=0,016 µs
=
General conditions
=
=
I
C 1%
V
CE 90%
V
GE 90%
-25
0
25
50
75
100
125
-0,1 0,2 0,5 0,8 1,1 1,4
%
t
tt
t
(µs)
(µs)(µs)
(µs)
t
doff
t
Eoff
V
CE
I
C
V
GE
I
C 10%
V
GE 10%
t
don
V
CE 3%
-50
0
50
100
150
200
250
300
3,9 4,1 4,3 4,5 4,7
%
t
tt
t
(µs)
(µs)(µs)
(µs)
I
C
V
CE
t
Eon
V
GE
fitted
I
C10%
I
C 90%
I
C 60%
I
C 40%
-25
0
25
50
75
100
125
0,2 0,3 0,4 0,5 0,6 0,7 0,8
%
t
tt
t
(µs)
(µs)(µs)
(µs)
V
CE
I
C
t
f
I
C 10%
I
C 90%
-25
0
25
50
75
100
125
150
175
4,18 4,19 4,2 4,21 4,22 4,23
%
t
tt
t
(µs)
(µs)(µs)
(µs)
t
r
V
CE
I
C
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 13 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 5. IGBT figure 6. IGBT
Turn-off Switching W avef orms & def inition of t Eoff Turn-on Switching Wavef orms & definition of t Eon
P
off
(100%) = 181,55 kW P
on
(100%) = 181,55 kW
E
off
(100%) = 26,99 mJ E
on
(100%) = 6,74 mJ
t
Eoff
=0,91 µs t
Eon
=0,28 µs
figure 7. FWD
Turn-off Switching W avef orms & definition of t rr
V
F
(100%) = 600 V
I
F
(100%) = 303 A
I
RRM
(100%) = -540 A
t
rr
= 0,222 µs
I
C 1%
V
GE 90%
-25
0
25
50
75
100
125
0 0,3 0,6 0,9 1,2
%
t
tt
t
(µs)
(µs)(µs)
(µs)
P
off
E
off
t
Eoff
V
CE 3%
V
GE 10%
-25
0
25
50
75
100
125
150
3,9 4,1 4,3 4,5 4,7
%
t
tt
t
(µs)
(µs)(µs)
(µs)
P
on
E
on
t
Eon
I
RRM
10%
I
RRM
90%
I
RRM
100%
t
rr
-200
-150
-100
-50
0
50
100
150
4,1 4,2 4,3 4,4 4,5 4,6 4,7
%
t
tt
t
(µs)
(µs)(µs)
(µs)
I
F
V
F
fitted
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 14 Copyright Vincotech
Half-Bridge Switching Characteristics
figure 8. FWD figure 9. FWD
Turn-on Switching Wavef orms & def inition of t
Qr
(t
Qr
= integrating time for Q
r
) Turn-on Switching Wavef orms & definition of t
Erec
(t
Erec
= integrating time for E
rec
)
I
F
(100%) = 303 A P
rec
(100%) = 181,55 kW
Q
r
(100%) = 49,99 µC E
rec
(100%) = 25,98 mJ
t
Qr
=0,44 µs t
Erec
= 0,44 µs
160
t
Qr
-200
-150
-100
-50
0
50
100
150
4,1 4,2 4,3 4,4 4,5 4,6 4,7 4,8
%
t
tt
t
(µs)
(µs)(µs)
(µs)
I
F
Q
r
-25
0
25
50
75
100
125
150
175
4,2 4,3 4,4 4,5 4,6 4,7 4,8
%
t
tt
t
(µs)
(µs)(µs)
(µs)
P
rec
E
rec
t
Erec
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 15 Copyright Vincotech
Date code UL & VIN Lot Serial
WWYY UL VIN LLLLL SSSS
Type&Ver Lot number Serial Date code
TTTTTTTVV LLLLL SSSS WWYY
Pin X Y Function
1 7,24 -0,45 Therm1
2 11,06 -0,45 Therm2
3 60,58 -0,45 G12
4 64,4 -0,45 S12
5 87,26 -0,45 C12
6 - - Ph
7 - - Ph
8 37,72 57,95 G11
9 33,92 57,95 S11
10 - - DC-
11 - - DC+
Ordering Code & Marking
with thermal paste with solder pins
without thermal paste with Press-fit
Pin table [mm]
Name
NN-NNNNNNNNNNNNNN-TTTTTTVV
Outline
Text
Datamatrix
A0-VP122PA300M7-L757F70T-/3/
Version
with thermal paste with Press-fit pins
Ordering Code
A0-VS122PA300M7-L757F70
A0-VS122PA300M7-L757F70-/3/
A0-VP122PA300M7-L757F70T
without thermal paste with solder pins
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 16 Copyright Vincotech
300 A
Rt Thermistor Thermistor
ID
IGBT
FWD
Component
T11 , T12
D11 , D12 1200 V
Pinout
Half-Bridge Diode
Identification
Comment
Half-Bridge Switch
300 A
1200 V
Voltage Current Function
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
06 Apr. 2017 / Revision 1 17 Copyright Vincotech
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Packaging instruction
Standard packaging quantity (SPQ) 24 >SPQ Standard <SPQ Sample
Handling instruction
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.: Date: Modification: Pages
A0-VS122PA300M7-L757F70-D1-14 06 Apr. 2017