AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT-23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter nger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buer, oscilla-
tor, or active mixer. Typical amplier designs at 900 MHz
yield 1.2 dB noise gures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good t for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
BASE EMITTER
EMITTER COLLECTOR
BASE EMITTER
COLLECTOR
320x
320x
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Note:
Top view. Package marking provides orientation
and identification. "x" is the date code.
2
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 11
VCEO Collector-Emitter Voltage V 5.5
IC Collector Current mA 32
PT Power Dissipation[2, 3] mW 200
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Electrical Specications, TA = 25°C
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
NF Noise Figure
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 1.0[1] 1.3[1] 1.0[2] 1.3[2]
GA Associated Gain
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5[1] 14[1] 11[2] 12.5[2]
hFE Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA – 70 300 70 300
ICBO Collector Cuto Current
VCB = 3 V µA 0.2 0.2
IEBO Emitter Cuto Current
VEB = 1 V µA 1.5 1.5
Notes:
1. Test circuit A, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
Thermal Resistance[2]:
θjc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 40°C.
AT-32011 fig 1
1000 pF V
BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
V
CC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
RF IN
W = 30
L = 60
CKT A: 25 Ω
CKT B: 5 Ω
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise gure, best gain, stability, and a practical synthesizable match.
3
Characterization Information, TA = 25°C
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Typ. Typ.
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 13
G1dB Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16.5 15
IP3 Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 24
|S21|E2 Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 13 11.5
AT-32011 fig 2
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1 1.5
2
1
0.5
0.5 2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 3
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 4
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
10
5
0.5 2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7 V.
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7 V.
AT-32011 fig 5
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
20
5
0
0.5 2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 6
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 7
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
4
AT-32011 fig 15
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
AT-31011 fig 14
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
AT-32011 fig 16
IP3 (dBm)
0
0
FREQUENCY (MHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
2 mA
5 mA
10 mA
20 mA
Figure 14. AT-32011 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
Figure 15. AT-32033 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
Figure 16. AT-32011 and AT-32033 Third Order In-
tercept vs. Frequency and Bias at VCE = 2.7 V, with
Optimal Tuning.
AT-32011 fig 11
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
10
0
-2.5
0.5 2.5
2.5
2.0
7.5
2 mA
5 mA
5
AT-32011 fig 12
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
AT-32011 fig 13
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 1 V.
Figure 12. AT-32011 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 1 V.
Figure 13. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 1 V.
Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 5 V.
Figure 9. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 5 V.
Figure 10. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 5 V.
AT-32011 fig 8
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
20
5
0
0.5 2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 9
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 10
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011, AT-32033 Typical Performance
5
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.59 172 -33.55 0.021 83 0.99 -5
0.5 0.88 -52 10.13 3.21 141 -20.85 0.091 59 0.92 -21
0.9 0.78 -86 8.67 2.71 117 -17.62 0.132 41 0.82 -32
1.0 0.75 -94 8.35 2.62 112 -17.27 0.137 37 0.79 -35
1.5 0.67 -127 6.35 2.08 89 -16.30 0.153 23 0.71 -45
1.8 0.63 -144 5.25 1.83 77 -16.28 0.154 16 0.67 -50
2.0 0.61 -155 4.75 1.73 70 -16.42 0.151 13 0.65 -53
2.4 0.59 -175 3.48 1.49 57 -16.86 0.144 9 0.62 -59
3.0 0.59 157 1.77 1.23 40 -17.89 0.128 8 0.61 -68
4.0 0.63 120 -0.39 0.96 18 -18.40 0.120 23 0.59 -84
5.0 0.69 94 -2.39 0.76 0 -15.60 0.166 35 0.59 -104
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.42 0.87 25 0.48
0.9 0.71 0.73 55 0.34
1.8 1.37 0.42 143 0.11
2.4 1.80 0.50 -162 0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32011 fig 18
GAIN (dB)
0
-5
FREQUENCY (GHz)
2 3
25
1 5
5
4
15 MSG
MAG
S21
MSG
Figure 18. AT-32033 Gains vs. Frequency at VCE = 1 V,
IC = 1 mA.
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.42 0.79 26 0.44
0.9 0.71 0.70 54 0.35
1.8 1.37 0.53 119 0.18
2.4 1.80 0.55 158 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
Figure 17. AT-32011 Gains vs. Frequency at VCE = 1
V, IC = 1 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V CE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.58 170 -32.75 0.023 83 0.99 -5
0.5 0.81 -52 9.88 3.12 134 -20.30 0.097 60 0.90 -22
0.9 0.61 -87 8.07 2.53 107 -17.57 0.132 46 0.78 -33
1.0 0.56 -95 7.65 2.41 101 -17.24 0.137 44 0.76 -35
1.5 0.41 -136 5.43 1.87 77 -16.61 0.148 39 0.68 -42
1.8 0.36 -160 4.30 1.64 66 -16.36 0.152 41 0.65 -46
2.0 0.34 -177 3.74 1.54 59 -16.05 0.158 44 0.63 -49
2.4 0.34 154 2.49 1.33 47 -15.10 0.176 49 0.61 -55
3.0 0.38 119 0.96 1.12 32 -12.77 0.230 55 0.59 -65
4.0 0.46 81 -0.84 0.91 15 -8.68 0.368 50 0.56 -87
5.0 0.51 56 -1.90 0.80 5 -5.68 0.520 37 0.51 -114
6
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.67 6.81 170 -35.25 0.017 82 0.99 -6
0.5 0.80 -60 15.10 5.69 136 -23.07 0.070 57 0.86 -24
0.9 0.67 -97 12.97 4.45 112 -20.34 0.096 41 0.73 -35
1.0 0.64 -104 12.48 4.21 107 -20.05 0.099 39 0.70 -37
1.5 0.55 -137 10.04 3.18 86 -19.21 0.110 30 0.61 -45
1.8 0.51 -154 8.77 2.75 76 -19.04 0.112 28 0.58 -49
2.0 0.50 -165 8.13 2.55 70 -18.99 0.112 27 0.56 -52
2.4 0.48 176 6.75 2.18 58 -18.84 0.114 27 0.54 -57
3.0 0.49 150 4.97 1.77 43 -18.52 0.119 30 0.52 -64
4.0 0.54 116 2.73 1.37 22 -16.98 0.142 36 0.50 -77
5.0 0.61 92 0.83 1.10 4 -14.50 0.188 37 0.50 -95
AT-32011 fig 19
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MSG
MAG
S21
Figure 19. AT-32011 Gains vs. Frequency at VCE = 2.7 V,
IC = 2 mA.
AT-32011 fig 20
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MSG
MAG
S21 MSG
Figure 20. AT-32033 Gains vs. Frequency at VCE = 2.7 V,
IC = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.93 -13 16.61 6.77 167 -34.89 0.018 82 0.99 -6
0.5 0.68 -56 14.29 5.18 127 -23.10 0.070 61 0.83 -22
0.9 0.44 -86 11.48 3.75 101 -20.35 0.096 55 0.71 -30
1.0 0.39 -93 10.88 3.50 96 -19.91 0.101 54 0.70 -31
1.5 0.23 -129 8.16 2.56 76 -17.99 0.126 55 0.64 -36
1.8 0.18 -156 6.89 2.21 66 -16.89 0.143 57 0.62 -39
2.0 0.16 -176 6.19 2.04 60 -16.14 0.156 57 0.61 -42
2.4 0.17 146 4.91 1.76 50 -14.70 0.184 58 0.60 -47
3.0 0.22 108 3.35 1.47 36 -12.51 0.237 57 0.58 -56
4.0 0.32 76 1.51 1.19 18 -9.19 0.347 51 0.55 -73
5.0 0.40 56 0.17 1.02 4 -6.54 0.471 40 0.51 -95
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.57 0.77 15 0.36
0.9 0.78 0.63 49 0.28
1.8 1.25 0.32 136 0.10
2.4 1.57 0.40 -159 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.57 0.69 22 0.30
0.9 0.78 0.60 51 0.25
1.8 1.25 0.42 117 0.14
2.4 1.57 0.44 159 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
7
AT-32011 fig 21
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MAG
S21 MSG
MSG
Figure 21. AT-32011 Gains vs. Frequency at VCE = 2.7
V, IC = 20 mA.
Figure 22. AT-32033 Gains vs. Frequency at VCE =
2.7 V, IC = 20 mA.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.52 -49 31.08 35.79 149 -37.78 0.013 72 0.83 -22
0.5 0.36 -138 22.96 14.06 102 -28.93 0.036 62 0.40 -42
0.9 0.34 -168 18.33 8.25 86 -25.15 0.055 64 0.31 -42
1.0 0.34 -174 17.46 7.47 83 -24.41 0.060 64 0.30 -42
1.5 0.34 165 14.13 5.09 71 -21.35 0.086 63 0.28 -45
1.8 0.34 155 12.61 4.27 64 -19.92 0.101 61 0.28 -49
2.0 0.35 148 11.74 3.86 60 -19.08 0.111 60 0.27 -52
2.4 0.36 136 10.23 3.25 52 -17.60 0.132 57 0.27 -58
3.0 0.39 120 8.38 2.62 40 -15.86 0.161 51 0.26 -67
4.0 0.45 98 6.00 2.00 23 -13.68 0.207 42 0.24 -84
5.0 0.52 82 4.25 1.63 7 -11.93 0.253 32 0.23 -106
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 1.39 0.15 45 0.28
0.9 1.51 0.12 100 0.22
1.8 1.78 0.28 -135 0.14
2.4 1.96 0.46 -107 0.22
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.50 -35 29.84 31.03 137 -37.08 0.014 77 0.79 -18
0.5 0.16 -52 19.58 9.53 94 -25.35 0.054 77 0.53 -20
0.9 0.08 -36 14.81 5.50 81 -20.63 0.093 75 0.50 -24
1.0 0.07 -31 13.96 4.99 78 -19.66 0.104 74 0.50 -25
1.5 0.06 12 10.71 3.43 66 -16.31 0.153 69 0.49 -31
1.8 0.07 31 9.31 2.92 60 -14.75 0.183 66 0.48 -35
2.0 0.08 40 8.50 2.66 56 -13.85 0.203 63 0.47 -38
2.4 0.11 48 7.16 2.28 48 -12.32 0.242 59 0.46 -44
3.0 0.15 53 5.62 1.91 37 -10.49 0.299 52 0.43 -54
4.0 0.21 52 3.86 1.56 20 -8.11 0.393 41 0.39 -71
5.0 0.26 48 2.61 1.35 6 -6.34 0.482 29 0.33 -91
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 1.39 0.15 65 0.16
0.9 1.51 0.14 105 0.13
1.8 1.78 0.28 -164 0.12
2.4 1.96 0.40 -142 0.13
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32011 fig 22
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
S21 MSG
MAG
MSG
8
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.52 0.73 20 0.34
0.9 0.75 0.63 49 0.28
1.8 1.26 0.44 111 0.16
2.4 1.60 0.45 153 0.09
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.56 6.73 167 -35.39 0.017 82 0.99 -5
0.5 0.69 -54 14.34 5.21 128 -23.74 0.065 62 0.85 -21
0.9 0.45 -82 11.62 3.81 102 -20.92 0.090 56 0.73 -28
1.0 0.40 -89 11.03 3.56 98 -20.35 0.096 55 0.72 -30
1.5 0.23 -121 8.33 2.61 77 -18.49 0.119 56 0.66 -35
1.8 0.17 -147 7.04 2.25 68 -17.39 0.135 58 0.65 -37
2.0 0.15 -167 6.36 2.08 62 -16.59 0.148 59 0.63 -40
2.4 0.14 151 5.06 1.79 51 -15.14 0.175 60 0.62 -44
3.0 0.20 109 3.52 1.50 37 -12.92 0.226 59 0.61 -53
4.0 0.31 76 1.66 1.21 19 -9.55 0.333 53 0.59 -70
5.0 0.38 55 0.26 1.03 5 -6.80 0.457 42 0.55 -90
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 0.52 0.79 15 0.42
0.9 0.75 0.65 48 0.30
1.8 1.26 0.33 127 0.11
2.4 1.60 0.39 -166 0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32011 fig 23
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MSG
MAG
S21
Figure 23. AT-32011 Gains vs. Frequency at VCE = 5 V,
IC = 2 mA.
AT-32011 fig 24
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MSG
MAG
S21 MSG
Figure 24. AT-32033 Gains vs. Frequency at VCE = 5 V,
IC = 2 mA.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -13 16.65 6.80 170 -35.84 0.016 82 0.99 -6
0.5 0.81 -57 15.18 5.74 137 -23.56 0.066 58 0.87 -23
0.9 0.68 -93 13.16 4.55 113 -20.72 0.092 43 0.74 -34
1.0 0.64 -100 12.69 4.31 109 -20.42 0.095 40 0.72 -36
1.5 0.55 -133 10.31 3.28 88 -19.49 0.106 32 0.63 -43
1.8 0.51 -150 9.05 2.84 78 -19.29 0.109 29 0.60 -47
2.0 0.49 -161 8.43 2.64 71 -19.22 0.109 28 0.58 -50
2.4 0.47 180 7.06 2.25 60 -19.03 0.112 29 0.55 -55
3.0 0.47 153 5.29 1.84 45 -18.72 0.116 31 0.54 -62
4.0 0.52 118 3.07 1.42 24 -17.19 0.138 37 0.52 -75
5.0 0.59 94 1.17 1.14 6 -14.73 0.183 38 0.51 -92
9
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 1.38 0.18 50 0.20
0.9 1.50 0.15 88 0.16
1.8 1.78 0.23 176 0.13
2.4 1.96 0.34 -156 0.12
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32011 fig 25
GAIN (dB)
0
0
FREQUENCY (GHz)
2 3
30
1 5
10
4
20
MAG
S21
MSG
MSG
Figure 25. AT-32011 Gains vs. Frequency at VCE = 5 V, IC =
20 mA.
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Freq. Fmin         Rn
GHz dB Mag Ang –
0.5[1] 1.38 0.25 35 0.30
0.9 1.50 0.19 85 0.23
1.8 1.78 0.21 -150 0.14
2.4 1.96 0.39 -114 0.19
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
Figure 26. AT-32033 Gains vs. Frequency at VCE = 5
V, IC = 20 mA.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.58 -43 31.28 36.64 151 -38.13 0.012 72 0.83 -21
0.5 0.35 -128 23.51 14.99 103 -29.05 0.035 62 0.42 -40
0.9 0.31 -161 18.93 8.84 87 -25.30 0.054 64 0.33 -40
1.0 0.30 -167 18.06 8.00 84 -24.57 0.059 64 0.32 -40
1.5 0.29 170 14.74 5.46 72 -21.50 0.084 63 0.30 -44
1.8 0.30 158 13.22 4.58 65 -20.06 0.099 61 0.29 -47
2.0 0.30 151 12.35 4.15 61 -19.23 0.109 60 0.29 -50
2.4 0.32 138 10.85 3.49 53 -17.77 0.129 57 0.28 -56
3.0 0.35 121 8.99 2.82 42 -16.03 0.158 52 0.27 -64
4.0 0.41 98 6.64 2.15 25 -13.85 0.203 42 0.25 -80
5.0 0.48 83 4.90 1.76 9 -12.12 0.248 33 0.24 -100
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.55 -31 30.00 31.61 138 -37.72 0.013 78 0.81 -16
0.5 0.20 -44 19.91 9.90 95 -25.85 0.051 77 0.56 -19
0.9 0.13 -31 15.15 5.72 82 -21.01 0.089 75 0.53 -22
1.0 0.12 -28 14.30 5.19 79 -20.18 0.098 74 0.53 -23
1.5 0.10 -7 11.03 3.56 68 -16.77 0.145 69 0.52 -30
1.8 0.09 5 9.63 3.03 61 -15.19 0.174 66 0.51 -33
2.0 0.10 13 8.82 2.76 57 -14.33 0.192 64 0.50 -36
2.4 0.11 25 7.49 2.37 50 -12.77 0.230 60 0.49 -42
3.0 0.13 36 5.93 1.98 39 -10.90 0.285 54 0.47 -51
4.0 0.18 42 4.19 1.62 23 -8.50 0.376 43 0.42 -67
5.0 0.22 43 2.98 1.41 8 -6.65 0.465 31 0.37 -86
Ordering Information
Part Numbers No. of Devices Comments
AT-32011-BLKG AT-32033-BLKG 100 Bulk
AT-32011-TR1G AT-32033-TR1G 3000 7" Reel
AT-32011-TR2G AT-32033-TR2G 10000 13" Reel
SOT-143 Plastic Package
Package Dimensions
eB
e2
B1
e1
E1
C
EXXX
L
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
DIMENSIONS (mm)
MIN.
0.79
0.013
0.36
0.76
0.086
2.80
1.20
0.89
1.78
0.45
2.10
0.45
MAX.
1.097
0.10
0.54
0.92
0.152
3.06
1.40
1.02
2.04
0.60
2.65
0.69
SYMBOL
A
A1
B
B1
C
D
E1
e
e1
e2
E
L
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved.
Obsoletes 5989-2643EN
AV02-0796EN - June 9, 2009
SOT-23 Plastic Package
e
B
e2
e1
E1
C
EXXX
L
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
DIMENSIONS (mm)
MIN.
0.79
0.000
0.30
0.08
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.20
3.13
1.50
1.02
2.04
0.60
2.70
0.69
SYMBOL
A
A1
B
C
D
E1
e
e1
e2
E
L