MBR20200CTTU - ON SEMICONDUCTOR

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MBR20200CT — Dual High Voltage Schottky Rectifier

MBR20200CT Re v. 1.1.0

July 2014

MBR20200CT

Dual High Voltage Schottky Rectifier

Features

• Low Forward Voltage Drop

• Low Power Loss and High Efficiency

• High Surge Capability

• RoHS Compliant

• Matte Tin (Sn) Lead Finish

• Terminal Leads Surface is Corrosion Resistant and

and able to Withstand to 260°C

• Wave Soldering or per MIL-STD-750 Method 2026.

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

MBR20200CTTU MBR20200CT TO-220 3L Rail

Symbol Parameter Value Unit

VRRM Maximum Repetitive Reverse Voltage 200 V

VRMaximum DC Reverse Voltage 200 V

IF(AV) Average Rectified Forward Current, at TC = 115°C per Leg 10 A

per Device 20

IFSM Peak Forward Surge Current, 8.3 ms Half-Sine Wave 150 A

TSTG Storage Temperature Range -50 to +150 °C

TJOperating Junction Temperature 150 °C

3. Anode

1. Anode

2. and Tap Cathode

1TO-220

MBR20200CT — Dual High Voltage Schottky Rectifier

MBR20200CT Re v. 1.1.0 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. MIL standard 883-1012 and JESD51-10.

Electrical Characteristics(2)

Values are at TA = 25°C unless otherwise noted.

Note:

2. DC Item are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Value Unit

RθJC Thermal Resistance, Junction-to-Case per Leg 1.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient per Leg 62.5 °C/W

Symbol Parameter Conditions Min. Max. Unit

IRReverse Current VR = 200 V, TC = 25°C0.2

VR = 200 V, TC = 125°C2.0

VFForward Voltage

IF = 10 A, TC = 25°C0.9

IF = 10 A, TC = 125°C0.8

IF = 20 A, TC = 25°C1.0

IF = 20 A, TC = 125°C0.9

MBR20200CT — Dual High Voltage Schottky Rectifier

MBR20200CT Re v. 1.1.0 3

Typical Performance Characteristics

Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current

Figure 3. Junction Capacitance Figure 4. Power Derating

0.01

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TJ=125 oC

TJ=75 oC

TJ=25 oC

Forward Voltage Drop, VF[V]

Forward Current, IF[A]

50 100 150 200

1E-3

0.01

0.1

100

1000

TJ=125 oC

TJ=25 oC

Reverse Current, IR[μA]

Reverse Voltage, VR[V]

TJ=75 oC

0246810

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

f=1mhz

Juntion Capacitance, CJ[nF]

Reverse Voltage, VR[V]

0 25 50 75 100 125 150

Average Forward Current, I F(AV)[A]

Case Temp erature, TC[oC]

MBR20200CT — Dual High Voltage Schottky Rectifier

MBR20200CT Rev. 1.1.0 4

Physical Dimensions

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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changes at any time without notice to improve the design.

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The datasheet is for reference information only.

Rev. I69

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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

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