(INTERSIL FEATURES * fds(on) < 30 ohms (2N4391) * Ipcoty < 100 pA * Switches +10 VAC with + 15V Supplies (2N4392, 2N4393) ABSOLUTE MAXIMUM RATINGS (25C unless otherwise noted) @ 25C (unless otherwise noted) Maximum Temperatures ITE4391-ITE4393 2N4391-2N4393 N-Channel JFET PIN CHIP CONFIGURATIONS TOPOGRAPHY TO-18 TO-92 50018 oes { r 9 0123 023 Q127 . a t 0045, 0036, 0035, 0026 _ 014 ~ {SOURCE) Gc i Oe o Ss $s 0G 00135 F JLt RADIUS 00175 (DRAIN) 0072 NOTE. SUBSTRATE 1S GATE Storage Temperatures 65C to + 200C Operating Junction Temperature TO 18 + 200C TO 92 + 125 Lead Temperature (Soldering, 10 sec) + 300C Maximum Power Dissipation Device Dissipation @ Free Air Temperature 300 mw ORDERING INFORMATION Linear Derating TO 18 1.7 mW/C : TO 92 3.0 mW/C TO-92 | TO-18 | WAFER | DICE Maximum Voltages & Current ITE 4391 | 2N4391 | 2N4391/W | 2N4391/D Vgg Gate to Source Voltage ~40V ne 4392 | 2N4392 | 2N4392/W/2N4392/D VgpGate to Drain Voltage ~A0 E 4393 | 2N4393 | 2N4393/W/2N4393/D ig Gate Current 50 mA ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 4391 4392 4393 CHARACTERISTIC MIN MAX | MIN MAX | MIN MAX UNIT. TEST CONDITIONS / -100 -100 -100 pA a - : Igss Gate Reverse Current =200 300 00 nA VGS= -20V, Vps = 0 eS BVGss Gate-Source Breakdown Voltage ~40 -40 40 Vv tg = 1A, Vos = 0 100 | pA os 200.1 nA Vos=~5V [ys0%c . 100 A !D(off} Drain Cutoff Current 300 eS Vos= 20V |(Vqs=-7V 150C 100 pA . . 200 nA Vas *-12 VF 760% Vosif) Gate-Source Forward Voltage 1 1 1 v ig = 1 mA, Vpg=0 VGS{ott} _Gate-Source Cutoff Voltage -4 -10 -2 -5 | -0.5 -3 Vos=20V.IDp=1nA toss (Nae th Drain Current 50 | 150 | 25 75 5 30 | mA | Vos=20V, Veg =0 0.4 Ip=3mA VDS(on) _ Drain Source ON Voltage 0.4 v V@570 Ip = 6mA 04 Ip =12mA DS(on) Static Drain-Source ON Resistance 30 60 100 Q VGs=9, lp=i1maA Fdston) Drain-Source ON Resistance 30 60 100 Q Vgs.= 9, Ip =0 f=1 kHz Ciss Common-Source Input Capacitance 14 14 14 Vos = 20 V, Vgs = 0 : Common-Source Reverse Transt 38 [Was = 8 Crss Conacitan ource Reverse Transfer 35 pF Vos = 0 VGS =1MHz apacitance 35 VGs7-12V td Turn-ON Delay Time 16 15 18 Vop = 19 V, VGs{on) = 9 tr Rise Time 5 5 5 a 'D(on) VGS(off} tott Turn-OF F Delay Time 20 35 50 S 4391 12 mA ~12V tf Fall Time 18 20 30 4392 6 7 4393 3 -5 NOTE: INPUT PULSE SAMPLING SCOPE 1. Pulse test required, pulse width = 300 us, duty cycle < 3% ~ RISE TIME < 0.5ns FALL TIME < 0.505 PULSE DUTY CYCLE 1% RISE TIME 0.4ns INPUT RESISTANCE 50 22