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Is Now Part of
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2002 Fairchild Semiconductor Corporation Rev. B, October 2002
KSB772
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
* PW10ms, Duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW350µs, Duty Cycle2%
hFE Classificntion
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 40 V
VCEO Collector-Emitter Voltage - 30 V
VEBO Emitter-Base Voltage - 5 V
ICCollector Current (DC) - 3 A
ICP *Collector Current (Pulse) - 7 A
IBBase Current (DC) - 0.6 A
PCCollector Dissipation ( TC=25°C) 10 W
Collector Dissipation ( Ta=25°C) 1W
Rθja Junction to Ambient 132 °C/W
Rθjc Junction to Case 13.5 °C/W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ . Max. Units
ICBO Collector Cut-of f Current VCB = - 30V, IE = 0 - 1 µA
IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA
hFE1
hFE2
* DC Current Gain VCE = - 2V, IC = - 20mA
VCE = - 2V, IC = - 1A 30
60 220
160 400
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.5 V
VBE(sat) * Base-Emitter Satur ation Volt age IC = - 2A, IB = - 0.2A - 1.0 - 2.0 V
fT Current Gain Bandwidth Product VCE = - 5V, IE = - 0.1A 80 MHz
Cob Output Capacitance VCB = - 10V, IE = 0
f = 1MH z 55 pF
Classification R O Y G
hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
KSB772
Audio Frequency Power Amplifier
Low Speed Switching
Complement to KSD882
1TO-126
1. Emitter 2.Collector 3.Base
©2002 Fairchild Semiconductor Corporation
KSB772
Rev. B, October 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
0 -4 -8 -12 -16 -20
-0.4
-0.8
-1.2
-1.6
-2.0
IB = -2mA
IB = -10mA
IB = -5mA
IB = -3mA
IB = -8mA
IB = -9mA
IB = -6mA
IB = -1mA
IB = -7mA
IB = -4mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-1
-10
-100
-1000
-10000
VCE(sat)
VBE(sat)
IC = 10·IB
VCE(sat),VBE(sat)[mV] SATURATIO N VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100
1
10
100
1000 IE = 0
f=1MHz
Cob[pF], CA PA CIT AN C E
VCB[V], COLLECTOR-BASE VOLTAGE
-0.01 -0.1 -1
1
10
100
1000 VCE=5V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
IC MAX(D C )
IC MAX(Pulse)
10ms
1ms
100us
VCEOMAX
s/b Limited
Dissipation
Limited
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSB772
Rev. B, October 2002
Typical Characteristics (Continued)
Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating
25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
s/b Limited
dT[%], Ic DERATING
TC[oC], CASE TEMPERATURE
25 50 75 100 125 150 175 200
0
2
4
6
8
10
12
14
16
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
2.29
1.35
1.70
1.50
0.85
0.65
3X
14.20 MAX
D
3.20
8.30
7.70
4.00
3.80
#1
0.60
0.45
3X
E
1.00
1.95
1.55
3.45
3.05
11.20
10.80
TOP VIEW
FRONT VIEW
SIDE VIEW
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
E
FOR TERMINAL LENGTH "E", REFER TO TABLE
F. DRAWING FILENAME: MKT-TO126AArev2
0.254
M
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
3.45 - 4.05
6.45-7.45
TSTU
2.36 - 2.96
5.36-6.36
NONE
(STD LENGTH)
12.76 - 13.36
15.76-16.76
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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