MITSUBISHI RF POWER TRANSISTOR 2SC3240 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 25C3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. FEATURES @ High gain: Gpe 211.5dB, Pp 2 100W @f = 30MHz, Voc = 12.5V, Pin = 7W @ High ruggedness: Ability to withstand 20:1 load VSWR when operated at f = 30MHz, Po = 100W, Vec = 15.2V. @ Emitter ballasted construction @ Low thermal resistance ceramic package with flange. input-output impedance Zin = 0.4 - j0.8 (22) Zout = 1.0 - j1.1 (22) @f = 30MHZz, Vee = 12.5V, Po = 100W APPLICATION Output stage of transmitter in HF band SSB mobile radio OUTLINE DRAWING Dimensions in mm : g : 1 18.4>0.15 24.6+0.6 sets. S + PIN: a @ COLLECTOR @ EMITTER @ BASE @ EMITTER FIN NOTE: EMITTER ELECTRODES ARE T-45E CONNECTED WITH FLANGE. ABSOLUTE MAXIMUM RATINGS (To = 25C unless otherwise specified) Symbol Parameter Conditions Ratings Unit Vcso Collector to base voltage 50 Vv VeBO Emitter to base voltage 5 Vv VcEO Collector to emitter voltage Ree =o 20 Vv Ic Callector current 25 A Ta =25C 8 Ww Po Collector dissipation To =25C 270 WwW Tj Junction temperature 175 C Tstg Storage temperature 55 to 175 C Rth-a Junction to ambient 18.7 C/W Thermal resistance Rth-c Junction to case 0.556 "Cc /W Note, Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1c. =285'c unless otherwise specified) Limits Symbol Parameter Test conditions Unit Min Typ Max VipaAyeBo| Emitter to base breakdown voltage le =20mMA, Ic=0 5 Vv V(pr)cBo| Collector to base breakdown voltage {o=20mA, Ie =0 50 Vv Vipr}ceo| Collector to emitter breakdown voltage lo=100mA, Reg =o 20 Vv logo Collector cutoff current Vop=15V, le =0 5 mA leBo Emitter cutoff current Vesp=3V, Io=0 5 mA Nee OC forward current gain * Voge =10V, Ig =1A 10 50 180 - Po Output power 100 110 Ww f=30MHZ, Voc =12.5V, Pin =7W 19 Collector efficiency 55 60 % Note. * Pulse test, Pw=150us, duty=5%. Above parameters, ratings, limits and conditions are subject to change. NOV. ' 97 MITSUBISHI ELECTRIC MITSUBISHI RF POWER TRANSISTOR 2SC3240 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT f=30MHz 10D,4T,5P Zout=50 2 10D, 6T ,3P Zin =50 2 to 110pF D,67.3 TR 2 LUG 7 At o rt Ly to 110pF 4T | 2T 8D 117 u re = Cy S QAFC 10 Ce to 100pF 160pF | 7 = 100 2 qT C 2P 4 160pF, 160pF, 82pF in parallel 82pF, 82pF, 82pF in parallel 100pF, 4700pF, 4700pF, 0.22uF,0.22uF, 33uF, 330uF in parallel RFC: 27 Turns 1 enameled wire 100pF, 220pF, 4700pF, 0.1uF, 330uF is parallel All coils but Ly are made from1.S5mm silver plated copper wire, L, is made fram 2.3@mm copper wire D: Inner diameter of coi! T. Turn number of coil P: Pitch of coil +Voc Dimension in milli-meter TYPICAL PERFORMANCE DATE COLLECTOR DISSIPATION VS. DC CURRENT GAIN VS. AMBIENT TEMPERATURE COLLECTOR CURRENT To = 25C = Voge =10V Ss Zz Zz z Zz K g = b 8 q a ra o D> Oo oO 8 8 3 Oo oO 8 50 100 150 200 0.1 05 1 25 10 20 SO 100 AMBIENT TEMPERATURE T 3 (PC) COLLECTOR CURRENT Ic (A} COLLECTOR OUTPUT CAPACITANCE OUTPUT POWER, COLLECTOR VS. COLLECTOR TO BASE VOLTAGE EFFICIENCY VS. INPUT POWER 40000 140 100 = 7000 To=25C To =25C S sooo f=1MHz f=30MHz z Ww 120FVcoo=12.5V 80 @ Q = Z 3000 = > Qo 5 2000 a 2 < x 100 60 a S 1000 it 5 700 5 80 40 & & $00 a BE 6 3 = 300 60 20 = 200 3 Ww > 100 40 9 8 + 2 3 5 710 20 30 50 70100 0 2 4 6 8 10 COLLECTOR TO BASE VOLTAGE Veg (V} INPUT POWER Pin (WI NOV. ' 97 MITSUBISHI ELECTRIC OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE MITSUBISHI RF POWER TRANSISTOR 2SC3240 NPN EPITAXIAL PLANAR TYPE COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. BASE TO EMITTER RESISTANCE ELECTRIC 160 Ww 100 = Q #=30MHz ss 7w < To=25C 140b To =25C 4 S =100 Voo=12.5V | ey aw > 30 gata = 1290p ADJUSTMENT $ S 8 a 9 S . 100 S269 y 3 = 80 x 2 a a 5 5 60 E > 40 & a 2 40 2 20 20 2 O wn o 0 5 0 8 10 12 14 16 18 5 10 203050 100 200 500 1k 2k 3k 5k 10k COLLECTOR SUPPLY VOLTAGE Ver (V) BASE TO EMITTER RESISTANCE Ree (2) COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 10 120mA To=25C 100mA <8 = 80mA 2 rn) ac ac > oO oc 4 oO IF oO w a 2 Oo oO 9 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE (V} NOV. 97