PDTC124XMB,315 - NXP Semiconductors

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA124XMB.

1.2 Features and benefits

100 mA output current capability

Reduces component count

Built-in bias resistors

Reduces pick and place costs

Simplifies circuit design

AEC-Q101 qualified

Leadless ultra small SMD plastic

package

Low package height of 0.37 mm

1.3 Applications

Low-current pe rip he r al dr iver

Control of IC inputs

Replaces general-purpose transistors

in digital applications

Mobile applications

1.4 Quick reference data

PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

Rev. 1 — 26 June 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) Tamb = 25 °C 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 1.7 2.1 2.6

Product data sheet Rev. 1 — 26 June 2012 2 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

2. Pinning information

3. Ordering information

4. Marking

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 I input (base)

DFN1006B-3 (SOT883B)

2 G GND (emitter)

3 O output (collector)

Transparent

top view

sym007

1R1

Table 3. Ordering information

Type number Package

Name Description Version

PDTC124XMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands;

body 1.0 x 0.6 x 0.37 mm SOT883B

Table 4. Marking codes

Type number Marking code

PDTC124XMB 0011 1001

Fig 1. DFN1006B-3 (SOT883B) binary marking code description

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac673

Product data sheet Rev. 1 — 26 June 2012 3 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 7 V

VIinput voltage positive - 40 V

negative - -7 V

IOoutput current - 100 mA

ICM peak collector current pulsed; tp≤1 ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C [1] - 250 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

FR4 PCB, standard footprint

Fig 2. Power derating curve for DFN1006B-3 (SOT883B)

Tamb (°C)

-75 17512525 75-25

006aad009

100

200

300

Ptot

(mW)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - - 500 K/W

Product data sheet Rev. 1 — 26 June 2012 4 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

7. Characteristics

[1] Characteristics of built-in transistor.

FR4 PCB, standard footprint

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05 0.02

0.01

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =50V; I

E=0A; T

amb = 25 °C - - 100 nA

ICEO collector-emitter cut-off

current VCE =30V; I

B=0A; T

amb =25°C --1µA

VCE =30V; I

B=0A; T

j=150°C --5µA

IEBO emitter-base cu t-off

current VEB =5V; I

C=0A; T

amb = 25 °C - - 120 µA

hFE DC current ga i n VCE =5V; I

C=5mA; T

amb =25°C 80 - -

VCEsat collector-emitter

saturati on voltage IC=10mA; I

B= 0.5 mA; Tamb = 25 °C - - 150 mV

VI(off) off-state input voltage VCE =5V; I

C= 100 µA; Tamb =25°C - 0.8 0.5 V

VI(on) on-state input voltage VCE =0.3V; I

C=2mA; T

amb =25°C 2 1.1 - V

R1 bias resistor 1 (input) Tamb = 25 °C 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 1.7 2.1 2.6

CCcollector capacitance VCB =10V; I

E=0A; i

e=0A;

f=1MHz; T

amb =25°C --2.5pF

fTtransition frequency VCE =5V; I

C=10mA; f=100MHz;

Tamb =25°C [1] - 230 - MHz

Product data sheet Rev. 1 — 26 June 2012 5 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Coll e cto r - em i tter saturation v oltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 6. On-state input voltage as a function of collector

current; typical values Fig 7. Off-state input voltage as a function of collector

current; typical values

IC (mA)

10−1102

101

006aaa174

102

103

hFE

(1)

(2)

(3)

IC (mA)

110

006aaa175

102

103

VCEsat

(mV)

(1)

(2)

(3)

006aaa176

IC (mA)

10−1102

101

VI(on)

(V)

10−1

(1)

(3)

(2)

006aaa177

IC (mA)

10−210110−1

VI(off)

(V)

10−1

(1)

(3)

(2)

Product data sheet Rev. 1 — 26 June 2012 6 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - St re ss te st qu alif ication for discrete semiconductors, and is

suitable for use in automotive applications.

f = 1 MHz; Tamb = 25 °C VCE = 5 V; Tamb = 25 °C

Fig 8. Col l e ctor capacita nce as a function of

collector-base voltage; typical values of built-in

transistor

Fig 9. Transition frequency as a function of collector

current; typical values of built-in transistor

VCB (V)

0504020 3010

006aad055

(pF)

006aac757

IC (mA)

10-1 102

101

102

103

(MHz)

Product data sheet Rev. 1 — 26 June 2012 7 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

9. Package outline

10. Soldering

Fig 10. DFN1006B-3 (SOT883B)

11-11-02Dimensions in mm

0.55

0.47

0.30

0.22

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95

Fig 11. Reflow soldering footprint for SOT883B (DFN1006 B-3)

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2x)

0.4

(2x)

0.25

(2x)

R0.05 (8x)

0.7

Footprint information for reflow soldering SOT883B

sot883b_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

Product data sheet Rev. 1 — 26 June 2012 8 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTC124XMB v.1 20120626 Product data sheet - -

Product data sheet Rev. 1 — 26 June 2012 9 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a de sign.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document ma y have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representati ons or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incide ntal,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless ot herwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 26 June 2012 10 of 11

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

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Export control — This document as well as the item(s) d escribed herein may

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12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 June 2012

Document identifier: PDTC124XMB

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

13 Contact information. . . . . . . . . . . . . . . . . . . . . .10

Mouser Electronics

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PDTC124XMB,315