R.A.063099
GHz TECHNOLOGY INC. RE SERVE S THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE P RODUCT ( S ) DESCRI BE D HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Te chnology In c. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel . 408 / 986- 8031 Fax 408 / 986-81 20
DME375A
375 Watts, 50 Volts, Pulsed
Avionics 1025-1150 MHz
GENERAL DESCRIPTION
The DME375A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissi pation
Device Dissipation @2 5 !C2 875 W
Maximum Voltage and Current
Collector to B a se Vo ltage (B Vces)55V
Emitter to Base Voltage (BVebo)4.0 V
Collector Current (Ic)30A
Maximu m T e mpe r a t u r e s
Storage Temperature -65 to +200 !C
Ope rating Junct ion Temperatur e +200 !C
ELECTRICAL CHARACTERISTICS @ 25!
!!
!C
SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Out F = 1025 – 1150 MHz 375 W
Pin Power Input 85 W
PgPower Gain 6.5 dB
"cCollector Efficiency
Vcc = 50 Volts
PW = 10 #sec
DF = 1% 40 %
VSWR1Load Mismatch Tolerance F = 1090 MHz !:1
FUNCTIONAL CHARACTERISTICS @ 25!
!!
!C
BVebo Emitter to Base Breakdown Ie = 20 mA 4.0 V
BVces Collector to Emitter Breakdown Ic = 25 mA 55 V
hFE DC – Current Gain Vce = 5V, Ic = 300 mA 10
$jc2Thermal Resista nce 0.2 !C/W
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Initial Issue June 1994
DME 375A
