BAV23 series Dual high-voltage switching diodes Rev. 06 -- 3 March 2008 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package Configuration NXP JEDEC BAV23A/DG SOT23 TO-236AB dual common anode BAV23C/DG SOT23 TO-236AB dual common cathode BAV23S SOT23 TO-236AB dual series SOT143B - dual isolated BAV23S/DG BAV23 BAV23/DG [1] /DG: halogen free 1.2 Features n High switching speed: trr 50 ns n Low leakage current n Repetitive peak reverse voltage: VRRM 250 V n Low capacitance: Cd 2 pF n Small SMD plastic package 1.3 Applications n High-speed switching at high voltage n High-voltage general-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 200 V - - 100 nA VR reverse voltage - - 200 V trr reverse recovery time - - 50 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV23 series NXP Semiconductors Dual high-voltage switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV23A/DG 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 3 1 2 1 2 006aab099 BAV23C/DG 1 anode (diode 1) 2 anode (diode 2) 3 common cathode 3 3 1 2 1 2 006aab034 BAV23S; BAV23S/DG 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 3 3 1 2 1 2 006aaa763 BAV23; BAV23/DG 1 cathode (diode 1) 2 cathode (diode 2) 3 anode (diode 2) 4 anode (diode 1) 4 1 3 4 3 2 1 2 006aab100 BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 2 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 3. Ordering information Table 4. Ordering information Type number BAV23A/DG Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 - plastic surface-mounted package; 4 leads SOT143B BAV23C/DG BAV23S BAV23S/DG BAV23 BAV23/DG 4. Marking Table 5. Marking codes Type number Marking code[1] BAV23A/DG ZY* BAV23C/DG ZX* BAV23S *V5 BAV23S/DG YD* BAV23 L30 BAV23/DG *N1 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 250 V - 200 V - 225 mA Per diode VRRM repetitive peak reverse voltage VR reverse voltage IF [1] forward current [2] IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave 125 mA 625 mA [3] tp = 1 s - 9 A tp = 100 s - 3 A tp = 10 ms - 1.7 A BAV23_SER_6 Product data sheet - (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 3 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tamb 25 C - 250 mW Tj Tamb junction temperature - 150 C ambient temperature -65 +150 C Tstg storage temperature -65 +150 C Per device [4] [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - - 500 K/W - - 360 K/W Per device [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF IR forward voltage reverse current Cd diode capacitance trr reverse recovery time [1] IF = 100 mA - - 1.0 V IF = 200 mA - - 1.25 V VR = 200 V - - 100 nA VR = 200 V; Tj = 150 C - - 100 A - - 2 pF - - 50 ns f = 1 MHz; VR = 0 V When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV23_SER_6 Product data sheet [1] (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 4 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 006aab212 600 mbg703 102 IFSM (A) IF (mA) 10 400 (2) 200 (1) 1 (3) (4) 10-1 0 0 0.4 0.8 1.2 1 1.6 10 102 103 104 tp (s) VF (V) (1) Tamb = 150 C Based on square wave currents. (2) Tamb = 85 C Tj = 25 C; prior to surge (3) Tamb = 25 C (4) Tamb = -40 C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 006aab213 102 IR (A) 10 (1) (2) 1 10-1 (3) 10-2 10-3 10-4 10-5 0 (4) 50 100 150 200 250 VR (V) (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = -40 C Fig 3. Reverse current as a function of reverse voltage; typical values BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 5 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes mbg447 1.0 006aab214 300 Cd (pF) IF (mA) (1) 0.8 200 0.6 (2) 100 0.4 0.2 0 2 4 6 VR (V) 0 8 0 f = 1 MHz; Tamb = 25 C 50 100 150 200 Tamb (C) FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curve 8. Test information tr t D.U.T. RS = 50 V = VR + IF x RS tp 10 % + IF IF SAMPLING OSCILLOSCOPE trr t Ri = 50 VR (1) 90 % mga881 input signal output signal (1) IR = 3 mA Fig 6. Reverse recovery time test circuit and waveforms BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 6 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 9. Package outline 3.0 2.8 3.0 2.8 1.1 0.9 1.1 0.9 1.9 3 4 3 0.45 0.15 2.5 1.4 2.1 1.2 2.5 2.1 1 1 2 0.48 0.38 1.9 2 0.88 0.78 0.15 0.09 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig 7. 0.45 0.15 1.4 1.2 04-11-04 Package outline SOT23 (TO-236AB) Dimensions in mm Fig 8. 04-11-16 Package outline SOT143B 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV23A/DG Package Description Packing quantity 3000 10000 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235 BAV23C/DG BAV23S BAV23S/DG BAV23 BAV23/DG [1] For further information and the availability of packing methods, see Section 14. BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 7 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 11. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.85 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 Fig 9. sot023 Reflow soldering footprint SOT23 (TO-236AB) 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 10. Wave soldering footprint SOT23 (TO-236AB) BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 8 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 3.25 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) solder resist 4 3 2.70 occupied area 1.30 3.00 1 2 solder paste msa441 0.90 1.00 2.50 Dimensions in mm Fig 11. Reflow soldering footprint SOT143B 4.45 1.20 (3x) 4 3 1.15 4.00 4.60 solder lands 1 solder resist 2 occupied area Dimensions in mm 1.00 3.40 preferred transport direction during soldering msa422 Fig 12. Wave soldering footprint SOT143B BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 9 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV23_SER_6 20080303 Product data sheet - BAV23S_5 BAV23_2 Modifications: * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. * * * * * * * * * * Legal texts have been adapted to the new company name where appropriate. Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG added Table 1 "Product overview": added Table 2 "Quick reference data": added Table 5 "Marking codes": amended Table 8: for BAV23 and BAV23S maximum value for Cd diode capacitance amended to 2 pF Figure 7 and 8: superseded by minimized package outline drawings Section 10 "Packing information": added Section 11 "Soldering": added Section 13 "Legal information": updated BAV23S_5 20011012 Product specification - BAV23S_4 BAV23_2 19960917 Product specification - BAV23_1 BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 10 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAV23_SER_6 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 06 -- 3 March 2008 11 of 12 BAV23 series NXP Semiconductors Dual high-voltage switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2008 Document identifier: BAV23_SER_6