1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
[1] /DG: halogen free
1.2 Features
1.3 Applications
nHigh-speed switching at high voltage
nHigh-voltage general-purpose switching
1.4 Quick reference data
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
BAV23 series
Dual high-voltage switching diodes
Rev. 06 — 3 March 2008 Product data sheet
Table 1. Product overview
Type number[1] Package Configuration
NXP JEDEC
BAV23A/DG SOT23 TO-236AB dual common anode
BAV23C/DG SOT23 TO-236AB dual common cathode
BAV23S SOT23 TO-236AB dual series
BAV23S/DG
BAV23 SOT143B - dual isolated
BAV23/DG
nHigh switching speed: trr ≤50 ns nLow capacitance: Cd≤2pF
nLow leakage current nSmall SMD plastic package
nRepetitive peak reverse voltage:
VRRM ≤250 V
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IRreverse current VR= 200 V - - 100 nA
VRreverse voltage - - 200 V
trr reverse recovery time [1] --50ns
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 2 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAV23A/DG
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
BAV23C/DG
1 anode (diode 1)
2 anode (diode 2)
3 common cathode
BAV23S; BAV23S/DG
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),
anode (diode 2)
BAV23; BAV23/DG
1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)
12
3
006aab099
12
3
12
3
006aab034
12
3
12
3
006aaa763
12
3
21
34
006aab100
12
43
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 3 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 4. Ordering information
Type number Package
Name Description Version
BAV23A/DG - plastic surface-mounted package; 3 leads SOT23
BAV23C/DG
BAV23S
BAV23S/DG
BAV23 - plastic surface-mounted package; 4 leads SOT143B
BAV23/DG
Table 5. Marking codes
Type number Marking code[1]
BAV23A/DG ZY*
BAV23C/DG ZX*
BAV23S *V5
BAV23S/DG YD*
BAV23 L30
BAV23/DG *N1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage - 250 V
VRreverse voltage - 200 V
IFforward current [1] - 225 mA
[2] - 125 mA
IFRM repetitive peak forward
current - 625 mA
IFSM non-repetitive peak forward
current square wave [3]
tp=1µs-9A
tp= 100 µs-3A
tp=10ms - 1.7 A
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 4 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
Per device
Ptot total power dissipation Tamb ≤25 °C[4] - 250 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 360 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF= 100 mA - - 1.0 V
IF= 200 mA - - 1.25 V
IRreverse current VR= 200 V - - 100 nA
VR= 200 V; Tj= 150 °C - - 100 µA
Cddiode capacitance f = 1 MHz; VR=0V - - 2 pF
trr reverse recovery time [1] --50ns
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 5 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =−40 °C
Based on square wave currents.
Tj=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =−40 °C
Fig 3. Reverse current as a function of reverse voltage; typical values
VF (V)
0 1.61.20.4 0.8
006aab212
200
400
600
IF
(mA)
0
(1) (3)
(4)
(2)
mbg703
10
1
102
IFSM
(A)
10−1
tp (µs)
110
4
103
10 102
006aab213
102
IR
(µA)
VR (V)
0 250200100 15050
10
1
10−1
10−2
10−3
10−4
10−5
(4)
(1)
(2)
(3)
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 6 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
8. Test information
f = 1 MHz; Tamb =25°C FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4. Diode capacitance as a function of reverse
voltage; typical values Fig 5. Forward current as a function of ambient
temperature; derating curve
mbg447
04862 VR (V)
1.0
0.8
0.2
0.6
0.4
Cd
(pF)
Tamb (°C)
0 20015050 100
006aab214
100
200
300
IF
(mA)
0
(2)
(1)
(1) IR=3mA
Fig 6. Reverse recovery time test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 7 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 7. Package outline SOT23 (TO-236AB) Fig 8. Package outline SOT143B
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1 1.4
1.2
1.7
1.9
0.48
0.38 0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BAV23A/DG SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BAV23C/DG
BAV23S
BAV23S/DG
BAV23 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BAV23/DG
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 8 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
11. Soldering
Fig 9. Reflow soldering footprint SOT23 (TO-236AB)
Fig 10. Wave soldering footprint SOT23 (TO-236AB)
solder resist
occupied area
solder lands
solder paste
Dimensions in mm
sot023
1.00
0.60
(3x)
1.30
12
3
2.50
3.00
0.85
2.70
2.90
0.50 (3x)
0.60 (3x)
3.30
0.85
sot023
4.004.60
2.80
4.50
1.20
3.40
3
21
1.20 (2x)
preferred transport direction during soldering
Dimensions in mm
solder resist
occupied area
solder lands
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 9 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
Dimensions in mm
Fig 11. Reflow soldering footprint SOT143B
Fig 12. Wave soldering footprint SOT143B
msa441
0.60
(4x)
1.30
2.50
3.00
2.70
0.50 (3x)
0.60 (3x)
3.25
43
21
0.90
1.00
solder lands
solder resist
occupied area
solder paste
msa422
4.00 4.60
1.20 (3×)
4.45
12
34
1.15
3.40 1.00 preferred transport direction during soldering
solder lands
solder resist
occupied area
Dimensions in mm
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 10 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAV23_SER_6 20080303 Product data sheet - BAV23S_5
BAV23_2
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG added
•Table 1 “Product overview”: added
•Table 2 “Quick reference data”: added
•Table 5 “Marking codes”: amended
•Table 8: for BAV23 and BAV23S maximum value for Cddiode capacitance amended to 2 pF
•Figure 7 and 8: superseded by minimized package outline drawings
•Section 10 “Packing information”: added
•Section 11 “Soldering”: added
•Section 13 “Legal information”: updated
BAV23S_5 20011012 Product specification - BAV23S_4
BAV23_2 19960917 Product specification - BAV23_1
BAV23_SER_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 3 March 2008 11 of 12
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BAV23 series
Dual high-voltage switching diodes
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 March 2008
Document identifier: BAV23_SER_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
