Rev.4.00 Mar 17, 2005 page 1 of 5
1N4148
Silicon Epitaxial Planar Diode for Various Detector,
Modulator, Demodulator
REJ03G0556-0400
(Previous: ADE-208-147C)
Rev.4.00
Mar 17, 2005
Features
Low capacitance. (C = 4.0 pF max)
Short reverse recovery time. (trr = 4.0 ns max)
High reliability with glass seal.
Ordering Information
Type No.
Cathode band
Mark
Package Name
Package Code
(Previous Code)
1N4148 Black H48 DO-35 GRZZ0002ZB-A
(DO-35)
Pin Arrangement
1. Cathode
2. Anode
Cathode band
12
H
48
1N4148
Rev.4.00 Mar 17, 2004 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 100 V
Reverse voltage VR 75 V
Average rectified current IO 150 mA
Peak forward current IFM 450 mA
Non-Repetitive peak forward surge current IFSM * 1 A
Power dissipation Pd 500 mW
Junction temperature Tj 200 °C
Storage temperature Tstg 65 to +200 °C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF1.0 V IF = 10 mA
Reverse current IR 25 nA VR = 20 V
Capacitance C 4.0 pF VR = 0 V, f = 1 MHz
Reverse recovery time trr *14.0 ns IF = 10 mA, VR = 6 V, Irr = 1 mA,
RL = 100
Note: 1. Reverse recovery time test circuit
0.1 µF
DC
Supply
Pulse
Generator
Ro = 50 Rin = 50
Sampling
Oscilloscope
3 k
Trigger
1N4148
Rev.4.00 Mar 17, 2004 page 3 of 5
Main Characteristic
0 0.2 0.80.6 1.00.4 1.2
Ta = -25°C
Ta = 25
°
C
Ta = 125°C
Ta = 75°C
020 608040 100
Ta = 75°C
Ta = 125°C
Ta = 25°C
1.0 10
10
1.0
10
2
f = 1MHz
10
–4
10
–3
10
–2
10
–1
10
–1
10
–5
10
–6
10
–4
10
–7
10
–8
10
–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage V
R
(V)
Reverse current I
R
(A)
Fig.1 Forward current vs. Forward voltage
Forward voltage V
F
(V)
Forward current I
F
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
1N4148
Rev.4.00 Mar 17, 2004 page 4 of 5
Ammo Pack Taping (TA TYPE)
gf
a
b
c
d
e
f
g
h
| L1–L2 |
64.0 ± 1.5
52.4 ± 1.2
6.0 ± 0.5
± 0.5
3.2 min
5.00 ± 0.38
± 1.0
1.0max
1.0max
h
White tape
Colored tape b/2 b/2
dd
e
c
L2
L1
b
a
Unit: mm
JEITA CODE TA21 (R)
Taping appearance
( ):Reference only.
Logistic code
Device name
Trace code
Quantity
System No.
Dete of Label issuance
Country of Origin
JapanMADE IN JAPAN
MalaysiaMADE IN MALAYSIA
1
Box
1N4148TA
5000PCS
MADE IN JAPAN
(75)
(255)
(80)
Unit: mm
T/C 5D4 ML31001-20 QTY:5000
H 5D4 5000 ML310001-20
MADE IN JAPAN
ML31001-20
1N4148TA
0S10
05/04/01
Label
Label indication example
(
For adapted Lead free )
5000PCS
MADE IN JAPAN
T/C 5D4 ML31001-20 QTY:5000
H 5D4 5000 ML310001-20
MADE IN JAPAN
ML31001-20
1N4148TA - E
0S10
05/04/01
Pb-Free T.
1N4148TA - E
2
3
4
5
6
7
1
2
34
5
6
7
1N4148
Rev.4.00 Mar 17, 2004 page 5 of 5
Package Dimensions
LEL
Min Nom Max
φb-0.5
φD-2.0
E--4.2
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
SC-40 0.13g
MASS[Typ.]
DO-35 / DO-35VGRZZ0002ZB-A
RENESAS CodeJEITA Package Code Previous Code
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0