LMK00101SQE/NOPB - TEXAS INSTRUMENTS

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PN2907 / MMBT2907 — PNP General-Purpose Transistor

PN2907 / MMBT2907 Rev. 1.1.0 1

January 2014

PN2907 / MMBT2907

PNP General-Purpose Transistor

Ordering Information

Part Number Top Mark Package Packing Method

PN2907BU PN2907 TO-92 3L Bulk

MMBT2907_D87Z 2B SOT-23 3L Tape and Reel

PN2907 MMBT2907

EBC TO-92 SOT-23

Mark:2B

Description

This device is designed for use with general-purpose

amplifiers and switches requiring collector currents to

500 mA. Sourced from process 63.

PN2907 / MMBT2907 — PNP General-Purpose Transistor

PN2907 / MMBT2907 Rev. 1.1.0 2

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -40 V

VCBO Collector-Base Voltage -60 V

VEBO Emitter-Base Voltage -5.0 V

ICCollector Current - Continuous -800 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Max. Unit

PN2907(3) MMBT2907(4)

Total Device Dissipation 625 350 mW

Derate Above 25°C5.02.8mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

PN2907 / MMBT2907 — PNP General-Purpose Transistor

PN2907 / MMBT2907 Rev. 1.1.0 3

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 -40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V

ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA

IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA

ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -20 nA

VCB = -50 V, IE = 0, TA = 150°C -20 μA

On Characteristics(5)

hFE DC Current Gain

VCE = -10 V, IC = -0.1 mA 35

VCE = -10 V, IC = -1.0 mA 50

VCE = -10 V, IC = -10 mA 70

VCE = -10 V, IC = -150 mA 100 300

VCE = -10 V, IC = -500 mA 30

VCE(sat) Collector-Emitter Saturation Voltage IC = -150 mA, IB = -15 mA -0.4 V

IC = -500 mA, IB = -50 mA -1.6

VBE(sat) Base-Emitter Saturation Voltage IC = -150 mA, IB = -15 mA -1.3 V

IC = -500 mA, IB = -50 mA -2.6

Small Signal Characteristics

Cob Output Capacitance VCB = -10 V, f = 1.0 MHz 8 pF

Cib Input Capacitance VEB = -2.0 V, f = 1.0 MHz 30 pF

hfe Small-Signal Current Gain IC = -50 mA, VCE = -20 V,

f = 100 MHz 2

Switching Characteristics

ton Turn-On Time

VCC = -30 V, IC = -150 mA,

IB1 = -15 mA

45 ns

tdDelay Time 10 ns

trRise Time 40 ns

toff Turn-Off Time

VCC = -6.0 V, IC = -150 mA,

IB1 = IB2 = -15mA

100 ns

tsStorage Time 80 ns

tfFall Time 30 ns

PN2907 / MMBT2907 — PNP General-Purpose Transistor

PN2907 / MMBT2907 Rev. 1.1.0 4

Physical Dimensions

Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.

TO-92 (Bulk)

PN2907 / MMBT2907 — PNP General-Purpose Transistor

PN2907 / MMBT2907 Rev. 1.1.0 5

Physical Dimensions (Continued)

Figure 2. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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Datasheet contains the design specifications for product development. Specifications may change

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changes at any time without notice to improve the design.

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The datasheet is for reference information only.

Rev. I66

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

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