1
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
1
23
tab
I²-PAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
OptiMOSª5Power-Transistor,150V
Features
Package
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 150 V
RDS(on),max(TO262) 5.1 mΩ
ID120 A
Type/OrderingCode Package Marking RelatedLinks
IPI051N15N5 PG-TO262-3 051N15N5 -
1) J-STD20 and JESD22
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OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
120
115 ATC=25°C
TC=100°C
Pulsed drain current1) ID,pulse - - 480 A TC=25°C
Avalanche energy, single pulse2) EAS - - 230 mJ ID=100A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 300 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.3 0.5 K/W -
Thermal resistance, junction - ambient,
minimal footprint RthJA - - 62 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=264µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
4.0
4.3
5.1
5.7 mΩVGS=10V,ID=60A
VGS=8V,ID=30A
Gate resistance3) RG- 1.1 1.6 Ω-
Transconductance gfs 59 117 - S |VDS|>2|ID|RDS(on)max,ID=60A
1) See Diagram 3
2) See Diagram 13
3) Defined by design. Not subject to production test.
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OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 6000 7800 pF VGS=0V,VDS=75V,f=1MHz
Output capacitance1) Coss - 1500 1950 pF VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance1) Crss - 34 60 pF VGS=0V,VDS=75V,f=1MHz
Turn-on delay time td(on) - 19.6 - ns VDD=75V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Rise time tr- 5.3 - ns VDD=75V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 4.5 - ns VDD=75V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Fall time tf- 37 - ns VDD=75V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 33 - nC VDD=75V,ID=60A,VGS=0to10V
Gate to drain charge1) Qgd - 16 24 nC VDD=75V,ID=60A,VGS=0to10V
Switching charge Qsw - 31 - nC VDD=75V,ID=60A,VGS=0to10V
Gate charge total1) Qg- 80 100 nC VDD=75V,ID=60A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=75V,ID=60A,VGS=0to10V
Output charge1) Qoss - 225 299 nC VDD=75V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS- - 120 A TC=25°C
Diode pulse current IS,pulse - - 480 A TC=25°C
Diode forward voltage VSD - 0.87 1.1 V VGS=0V,IF=60A,Tj=25°C
Reverse recovery time1) trr - 72 144 ns VR=75V,IF=60A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 106 212 nC VR=75V,IF=60A,diF/dt=100A/µs
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
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OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 50 100 150 200
0
40
80
120
160
200
240
280
320
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 50 100 150 200
0
20
40
60
80
100
120
140
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102103
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
012345
0
50
100
150
200
250
300
350
400
450
500
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 50 100 150 200 250 300 350 400 450 500
0
1
2
3
4
5
6
7
8
9
10
5.5 V
6 V
7 V
8 V
10 V
8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
50
100
150
200
250
300
350
175 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120
0
20
40
60
80
100
120
140
160
180
200
gfs=f(ID);Tj=25°C
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OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
2
4
6
8
10
12
max
typ
RDS(on)=f(Tj);ID=60A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2640 µA
264 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60 80 100 120
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
175 °C
25°C max
175°C max
IF=f(VSD);parameter:Tj
8
OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS[A]
100101102103
100
101
102
103
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 20 40 60 80 100
0
2
4
6
8
10
120 V
75 V
30 V
VGS=f(Qgate);ID=60Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
135
140
145
150
155
160
165
170
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
9
OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TO262-3,dimensionsinmm/inches
10
OptiMOSª5Power-Transistor,150V
IPI051N15N5
Rev.2.0,2016-02-01Final Data Sheet
RevisionHistory
IPI051N15N5
Revision:2016-02-01,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-02-01 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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