6357254 MOTOROLA SC (XSTRS/R, F) MAXIMUM RATINGS Se 7. BITRE 7 eT 96D 82061 - D- Feq-29 Rating Symboi Value Unit Collector-Emitter Voltage VcES 30 Vde M M BTA63 Callector-Base Voltage VcBo 30 Vde MMBTA64 Emitter-Base Voltage VeBo 10 Vde Collector Currant Continuous Io 500 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Collector 3 Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C Derate above 26C 1.8 mWwrc x 3 Thermal Resistance Junction to Ambient ReJA 556 CimW 1 NS = Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwrc Emitter 2 Thermal Resistance Junction to Ambient Raa 417 CimWw Junction and Storage Temperature . Ty. Tstq 150 a 9 DARLINGTON TRANSISTOR *FR-5 = 1,0 x 0.75 x 0.62 in. **Aiumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. PNP SILICON DEVICE MARKING | MMBTA63 = 2V; MMBTAG4 = 2U | Refer to MPSA75 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max | unit | OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage V(BRICES 30 _ Vde {I = 100 pAdc) Collector Cutoff Current IcBo ad 100 nAdc {Vcg = 30 Vde} Emitter Cutoff Current IEBO 100 nAdc (Vee = 10 Vdc} ON CHARACTERISTICS DC Current Gain(1) hee (Ic = 10 mAde, Vce = 5.0 Vde) MMBTA63 5,000 - (I = 10 mAde, Voce = 5.0 Vdc) MMBTAG4 10,000 _ (lc = 100 mAdc, Vee = 5.0 Vde) MMBTA63 10,000 _ (le = 100 mAde, Voge = 5.0 Vde) MMBTAG4 20,000 _ Collector-Emitter Saturation Voltage VcE(sat} - 15 Vde (I = 100 mAde, Ig = 0.1 mAdc) ' Base-Emitter On Voltage VBEton) _ 2.0 Vde (I = 100 mAdc, VcE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product tr 125 MHz (ic = 10 mAde, Vcg = 5.0 Vde, f = 100 MHz) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-126 qb DE Bpbae7e54 OO62ubs 4 aMOTOROLA SC IXSTRS/R FF 6357254 MOTOROLA SC MAXIMUM RATINGS SC CXSTRS/R F). Ib DE i 6367254 O0820be2 Rating Symbol Value Unit Collector-Emitter Voltage VcEO 40 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 28C Derate above 25C 1.8 mWPrc Therma! Resistance Junction to Ambient Raa 556 *CimwW Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwPC Thermal Resistance Junction to Ambient Resa 417 CimW Junction and Storage Temperature Ty. Tstg 160 C *FR-5 = 1,0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | MMBTA70 = 2c - 96D 82062. OD Tepes MMBTA70 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) Sy . 3 Collector 2 Emitter GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to 2N5086 for graphs. [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 40 Vde {l = 1.0 mAds, lg = 0) Emitter-Base Breakdown Voltage ViBRIEBO 4.0 _ Vde (IE = 100 wAds, Ic = 0) Collector Cutoff Current Icso0 _ 100 nAdc (VcR = 30 Vde, IF = 0) ON CHARACTERISTICS DC Current Gain fre 40 400 _ (ic = 5.0 mAdc, Vce = 10 Vde) Collector-Emitter Saturation Voltage VCE(sat) - 0.25 Vde {I = 10 mAde, Ip = 1,0 mAdc} SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product ft 125 ~ MHz {Ig = 6.0 mAde, Voge = 10 Vde, f = 100 MHz) Output Capacitance Cobo _ 4,0 pF (Vcp = 10 Vde, lz = 0, f = 100 kHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-127 rMOTOROLA SC IXSTRS/R FH Vb DE fu3e7es4 O04e0b3 1 i 6367254 MOTOROLA SC 96D 82063 OD MAXIMUM RATINGS T.. T Rg G aS Rating Symbol MMBTA92 MMBTAg93 Unit Collector-Emitter Voltage VcEO 300 200 Vde MMBTA92 Collector-Base Voltage VcBo 300 200 Vde MMBTA93 Emitter-Basa Voltage VEBO 5.0 5.0 Vdo Collector Current Continuous Ic 500 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Collector Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C 1 Derate above 26C * 1.8 mWPC Base Thermal Resistance Junction to Ambient RJA 556 CimW > Emitter Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 24 mwWwrec Thermal Resistance Junction to Ambient ReJA 417 CimW HIGH VOLTAGE Junction and Storage Temperature Ty. Tstg 160 cc TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. PNP SILICON DEVICE MARKING | MMBTAQ2 = 2D; MMBTAQ3 = 2E | Refer to MPSA92 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1)} V(BRICEO Vde (lc = 1.0 mAde, Ig = 0) MMBTA92 300 _ MMBTA93 200 = Collector-Base Breakdown Voltage VIBRICBO Vde (lc = 100 pAde, Ig = 0) MMBTA92 300 - MMBTAQ93 200 - Emitter-Base Breakdown Voltage VIBRIEBO 5.0 - Vde (ig = 100 pAde, I = 0) Collector Cutoff Current IcBo Adc (Vcog = 200 Vde, Iz = 0) MMBTAS2 _ 0.25 (Vcp = 160 Vde, Ie = 0) MMBTAS3 _ 0.25 Emitter Cutoff Current lEBO _ 0.1 pAdc (Vee = 3.0 Vdc, Ic = 0) ON CHARACTERISTICS(1} ! OC Current Gain hee (ig = 1.0 mAde, VcgE = 10 Vde) Both Types 25 (ic = 10 mAde, VcE = 10 Vde) Both Types 40 _- (Ic = 30 mAde, VoE = 10 Vdc) MMBTA92 25 _ MMBTAS3 25 _ Collector-Emitter Saturation Voltage VcE(sat} Vde (l = 20 mAde, Ig = 2.0 mAde} MMBTA92 0.5 MMBTAS3 - 0.5 Base-Emitter Saturation Voltage VBE\(sat} _ 0.9 Vde {i = 20 mAds, Ip = 2.0 mAdc} SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 50 _ MHz {ic = 10 mAdc, VcE = 20 Vde, f = 100 MHz) Collector-Base Capacitance Cob pF (Vcp = 20 Vde, Ig = 0, f = 1,0 MHz} MMBTAG2 6.0 . MMBTA&3 _ 8.0 (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-128 rere ae ricMOTOROLA SC IXSTRS/R FI qk DE Pfusu7esu OO820b4 3 I 6367254 MOTOROLA SC (XSTRS/R F) | ~= 96D 82064 ~OD | ' Tr Jl ls i MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 25 Vde MMBTH 10 Collector-Base Voltage Vcopo 30 Vde Emitter-Base Voltage VEBO 3.0 Vde CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3.Coltector Ta = 25C Derate above 25C 18 mwrc x 3 Thermal Resistance Junction to Ambient Raa 556 Cimw 1 oe Bose Total Device Dissipation Pp 300 mW 2 Alumina Substrate,** Ta = 25C 2 Emitter Derate above 26C 24 mWPrec Thermal Resistance Junction to Ambient Raa 417 Cimw Junction and Storage Temperature Ty, Tstg 150 C VHF/UHE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. NPN SILICON DEVICE MARKING | MMBTHIO = 3E | Refer to MPSH10 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbo! Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 25 _- Vde (lc = 1.0 mAdc, Ip = 0) Collector-Base Breakdown Voltage ViBRICBO 30 _ Vde (Ic = 100 pAde, te = 0) Emitter-Base Breakdown Voltage ViBRIEBO 3.0 _~ Vde {le = 10 pAds, tc = 9) Collector Cutoff Current lcBo 100 nAdc (Vcop = 25 Vde, Ie = 0} Emitter Cutoff Current lEBO _- 100 nAdc (Vee = 2.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain FE 60 _ - (Ig = 4.0 mAde, VcE = 10 Vdc) Collector-Emitter Saturation Voltage VcE(sat) _ 0.5 Vde (Ic = 4.0 mAde, Ig = 0.4 mAdc) Base-Emitter On Voltage VeE _ 0.95 Vde (I = 4.0 mAdc, VcE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 650 _ MHz (Ic = 4.0 mAdc, Voce = 10 Vdc, f = 100 MHz) Collector-Base Capacitance Cob _ 0.7 pF (Veg = 10 Vde, Ip = 0, f = 1.0 MHz) Common-Base Feedback Capacitance Crb _ 0.65 pF {Vep = 10 Vde, Ie = 0, f = 1,0 MHz} Collector Base Time Constant rbCy _ 9.0 ps (lg = 4.0 mAdc, Vcg = 10 Vde, f = 31.8 MHz) | | t MOTOROLA SMALL-SIGNAL SEMICONDUCTORS ; 3-129MOTOROLA SC {XSTRS/R FT Ib DE Pfesb7e54 OO8eO0bs 5 UT -- wet ae - = poe --= en me - 6367254 96D 82065 __ D MOTOROLA SC CXSTRS/R F) MAXIMUM RATINGS __- T-31-15 - Rating Symbol Value Unit Collactor-Emitter Voltage VcEO 30 Vde MMBTH24 Collector-Base Voltage VcBO 40 Vde Emitter-Base Voltage VEBO 4.0 Vde CASE 318-02/03, STYLE 6 Collector Current Continuous le 100 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3 Collector Ta = 25C 3 Derate above 26C 18 mwrc 1 Thermal Resistance Junction to Ambient Rasa 556 Cimw 1 > eo Base Total Device Dissipation Pp 300 mw 2 Emutter Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwrc Thermal Resistance Junction to Ambient Rea 417 c/mW Junction and Storage Temperature Ty. Tstg 150 C VHF MIXER TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, NPN SILICON DEVICE MARKING | MMBTH24 = 3A | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic [| symbot [min Typ Mex | unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage VIBRICEO 30 _ - Vde (ic = 1.0 mAde, Ig = 0) Collector-Bass Breakdown Voltage VIBRICBO 40 - _ Vde (Ic = 100 Ade, Ie = 0) Emitter-Base Breakdown Voltage V(BRIEBO 4.0 _ Vde (lg = 10 pAde, Io = 0} Collector Cutoff Current IcBo _ _- 50 nAdc (Vcp = 18 Vde, Ig = 0} ON CHARACTERISTICS DC Current Gain hee 30 _ _ {lc = 8.0 mAdc, Vcg = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(1) fT 400 620 - MHz (I = 8.0 mAdc, VcE = 10 Vdc, f = 100 MHz} 1 Collector-Base Capacitance Cob _- 0.25 0.36 pF {Vcop = 10 Vde, ig = 0, f = 1.0 MHz) Conversion Gain - dB (213 MHz to 45 MHz) (Ic = 8.0 mAdc, Voc = 20 Vde, Oscillator Injection = 180 mVrms} C 19 24 _- (60 MHz to 45 MHz) 6 {Ic = 8.0 mAdc, Voc = 20 Vde, Oscillator Injection = 150 mVrms) 24 29 _ (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. : MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-130