SCH2808 - Sanyo Semiconductor

SCH2808

No.8360-1/6

Features

•Composite type with an N-channel sillicon MOSFET (SCH1412) and a schottky barrier diode (SS0503)

contained in one package facilitating high-density mounting.

•[MOSFET]

• Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

•[SBD]

• Short reverse recovery time.

• Low forward voltage.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

[MOSFET]

Drain-to-Source Voltage VDSS 30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID1.4 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 5.6 A

Allowable Power Dissipation PD

Mounted on a ceramic board (900mm2✕0.8mm) 1unit

0.6 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +125 °C

[SBD]

Repetitive Peak Reverse Voltage VRRM 30 V

Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V

Average Output Current IO0.5 A

Surge Forward Current IFSM 50Hz sine wave, 1 cycle 3 A

Junction Temperature Tj --55 to +125 °C

Storage Temperature Tstg --55 to +125 °C

Marking : QH

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN8360

62005PE MS IM TB-00001448

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SCH2808 MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

General-Purpose Switching Device

Applications

SCH2808

No.8360-2/6

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

[MOSFET]

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V

Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V

Forward T ransfer Admittance yfsVDS=10V, ID=700mA 0.66 1.1 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=700mA, VGS=10V 230 300 mΩ

RDS(on)2 ID=400mA, VGS=4V 400 560 mΩ

Input Capacitance Ciss VDS=10V, f=1MHz 65 pF

Output Capacitance Coss VDS=10V, f=1MHz 14 pF

Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 8 pF

Turn-ON Delay Time td(on) See specified Test Circuit. 5.0 ns

Rise T ime trSee specified Test Circuit. 4.0 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 11 ns

Fall T ime tfSee specified Test Circuit. 3.0 ns

Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 2.5 nC

Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.4A 0.6 nC

Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.4A 0.3 nC

Diode Forward Voltage VSD IS=1.4A, VGS=0V 0.87 1.2 V

[SBD]

Reverse Voltage VRIR=0.5mA 30 V

Forward Voltage VFIF=0.5A 0.42 0.47 V

Reverse Current IRVR=15V 120 µA

Interterminal Capacitance C VR=10V, f=1MHz 13 pF

Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns

Package Dimensions Electrical Connection

unit : mm

7028-003

1.6

1.5

0.05

0.5

0.05

0.56

0.25

0.2 0.2

645

1 : Gate

2 : Source

3 : Anode

4 : Cathode

5 : Drain

6 : Drain

SANYO : SCH6

12 3

1 : Gate

2 : Source

3 : Anode

4 : Cathode

5 : Drain

6 : Drain

Top view

SCH2808

No.8360-3/6

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

Duty≤10%

50Ω100Ω10Ω

--5V

trr

100mA100mA

10mA

10µs

PW=10µs

D.C.≤1%

P.G 50Ω

ID=700mA

RL=21.4Ω

VDD=15V

VOUT

SCH2808

VIN

10V

VIN

0.2

0.4

0.6

0.8

1.0

1.2

1.4

--60 --40 --20 0 20 40 60 80 100 120 140 160

234 6785910

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

IT03296

0.5

1.0

2.0

0.2

1.5

100

200

300

400

500

600

700

800

0.4 0.6 0.8 1.0

Drain-to-Source Voltage, VDS -- V

ID -- VDS

Drain Current, ID -- A

IT03294

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source Voltage, VGS -- V

ID -- VGS

Drain Current, ID -- A

IT03295

Ambient Temperature, Ta -- °C

RDS(on) -- Ta

IT03297

100

200

300

400

500

600

700

800

ID=0.7A, VGS=10V

ID=0.4A, VGS=4V

VGS=3V

10V

VDS=10V

--25°C

Ta=75°C

Ta= --25°C

ID=0.4A 0.7A

Ta=25°C

25°C

75°C

25°C

[MOSFET] [MOSFET]

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

SCH2808

No.8360-4/6

0.1

1.0

0.01 23 57 2

0.01 0.1 357 2

1.0 5

IDP=5.6A

ID=1.4A

Operation in this

area is limited by RDS(on).

100ms

100µs

DC operation (Ta=25°C)

1ms

10ms

<10µs

32357

0 0.5 1.0 1.5 2.0 2.5

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Source Voltage, VGS -- V

IT03302

50.1 1.0

2735723

1.0

Drain Current, ID -- A

SW Time -- ID

Switching Time, SW Time -- ns

VDD=15V

VGS=10V

td(on)

td(off)

IT03300

Ciss, Coss, Crss -- VDS

Drain Current, ID -- A

IT03298

0.01 0.1

23 57 2 2357

1.0 3

1.0

0.1

Forward T ransfer Admittance, 

fs -- S



fs -- ID

VDS=10V

--25°C

Ta=75°C

IT03299

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.01

0.1

1.0

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

IS -- VSD

VGS=0V

--25

25°C

Ta=75°C

0 5 10 15 20 25 30

100

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- pF

IT03301

Ciss

Coss

Crss

f=1MHz

IT09716

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

0.2

0.4

0.6

0.8

00 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

IT09717

[MOSFET] [MOSFET]

[MOSFET]

Ta=25°C

Single pulse

Mounted on a ceramic board (900mm

✕0.8mm) 1unit

VDS=10V

ID=1.4A

Mounted on a ceramic board (900mm

✕0.8mm) 1unit

SCH2808

No.8360-5/6

100

0.1 1.0

23 57 10

23 5 23 577

C -- VR

00.1 0.2

0.30

0.35

0.25

0.15

0.10

0.05

0.20

0.3 0.4 0.5 0.6

PF(AV) -- IO

IT08187 IT07891

(2) (4) (3)(1)

f=1MHz

1.0

0.1

0.01 0.3 0.40.1 0.2

0.60.5

IF -- VF

Ta=125°C

100°C

75°C

50°C

25°C

IT07927 IT07928

1.0

100

1000

100000

10000

510 3015 20 25

IR -- VR

Ta=125°C

25°C

100

20ms

70.01 23 7

0.1

05237

1.0

523

3.0

3.5

2.0

1.0

2.5

1.5

0.5

ID00338

IFSM -- t

[SBD] [SBD]

[SBD][SBD]

[SBD]

Forward Voltage, VF -- V

Forward Current, IF -- A

Reverse Voltage, VR -- V

Reverse Current, IR -- µA

Average Output Current, IO -- A

(1) Rectangular wave θ=60°

(2) Rectangular wave θ=120°

(3) Rectangular wave θ=180°

(4) Sine wave θ=180°

Average Forward Power Dissipation, PF(AV) -- W

180°

360°

Sine wave

360°

Rectangular wave

20ms

Time, t -- s

Surge Forward Current, IFSM(Peak) -- A

Reverse Voltage, VR -- V

Interterminal Capacitance, C -- pF

Current waveform 50Hz sine wave

SCH2808

No.8360-6/6

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of June, 2005. Specifications and information herein are subject

to change without notice.

Note on usage : Since the SCH2808 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.