© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C55 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ55 V
VGSM Transient ± 20 V
ID25 TC= 25°C 260 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25°C, pulse width limited by TJM 780 A
IATC= 25°C 100 A
EAS TC= 25°C 600 mJ
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Tsold Plastic body for 10 seconds 260 °C
Weight 3 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 55 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 150 μA
RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 3.3 mΩ
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA260N055T2-7 VDSS = 55V
ID25 = 260A
RDS(on)
3.3mΩΩ
ΩΩ
Ω
DS100071(11/08)
Features
zInternational standard package
z175°C Operating Temperature
zHigh current handling capability
zAvalanche rated
zLow RDS(on)
Advantages
zEasy to mount
zSpace savings
zHigh power density
pplications
zAutomotive
- Motor Drives
- 12V Battery
- ABS Systems
zDC/DC Converters and Off-line UPS
zPrimary- Side Switch
zHigh Current Switching Applications
Preliminary Technical Information
TO-263 (7-lead)
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
1
7
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA260N055T2-7
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 55 94 S
Ciss 10.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1460 pF
Crss 215 pF
td(on) 20 ns
tr 27 ns
td(off) 36 ns
tf 24 ns
Qg(on) 140 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC
Qgd 32 nC
RthJC 0.31 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 260 A
ISM Repetitive, Pulse width limited by TJM 1000 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 60 ns
IRM 3.4 A
QRM 102 nC
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
IF = 130A, VGS = 0V
-di/dt = 100A/μs
VR = 27V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA..7) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXTA260N055T2-7
Fi g . 1. Ou tp u t C h ar acter isti cs
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
DS
- Volts
I
D
- A mpere s
V
GS
= 15V
10V
9V 8V
5V
6V
7V
Fi g . 3. Ou tp u t Ch ar acterist i cs
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- A mpe res
V
GS
= 15V
10V
9V
8V
7
V
5
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 130A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 260A
I
D
= 130A
Fig. 5. R
DS(on)
Normalized to I
D
= 130A Valu e
vs. Drain Current
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
0 50 100 150 200 250 300 350
I
D
- Amp eres
R
DS(on)
- N orm a lize d
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fi g. 6. D r ain C u r ren t vs. C ase Temp er atur e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175 200
T
C
- Degrees Centig ra de
I
D
- Am peres
Ext er nal Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA260N055T2-7
IXYS REF: T_260N055T2(V6)11-10-08-A
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- A mpe res
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s - S iem ens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
In tri n sic D i od e
0
40
80
120
160
200
240
280
320
360
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- A m p e res
T
J
= 150ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Q
G
- NanoCoulombs
V
GS
- V o lt s
V
DS
= 28V
I
D
= 130A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Vo lts
I
D
- Am peres
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
100ms
R
DS(
on
)
Limit
DC
External Lead Current Limit
© 2008 IXYS CORPORATION, All rights reserved
IXTA260N055T2-7
Fig. 1. Output Characteristics
@ 25º C
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
DS
- Volts
I
D
- A m p e res
V
GS
= 15V
10V
9V 8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 15V
10V
9V
8V
7
V
5
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 130A Value
vs. Jun cti o n Temp er atur e
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 260A
I
D
= 130A
Fig. 5. R
DS(on)
Normalized to I
D
= 130A Value
vs. Drain Current
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
0 50 100 150 200 250 300 350
I
D
- Ampe res
R
DS(on)
- N or m a liz ed
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case T emperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175 200
T
C
- Degrees Centigrade
I
D
- A m p e res
Exter nal Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA260N055T2-7
IXYS REF: T_260N055T2(V6)11-10-08-A
Fi g . 19. Maxi mu m Tr an sien t Th er mal Imp ed ance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W