
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA260N055T2-7
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 55 94 S
Ciss 10.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1460 pF
Crss 215 pF
td(on) 20 ns
tr 27 ns
td(off) 36 ns
tf 24 ns
Qg(on) 140 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC
Qgd 32 nC
RthJC 0.31 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 260 A
ISM Repetitive, Pulse width limited by TJM 1000 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 60 ns
IRM 3.4 A
QRM 102 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
IF = 130A, VGS = 0V
-di/dt = 100A/μs
VR = 27V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA..7) Outline