""~y-q.j iDARLINGTOV COMPLEMENTARY SILICON POWER TRANSISTORS 7 yy',"Q `yvJ /^ . 1 ;;`,/I" .. designed for generalbpurpose amplifier and low-speed switching applications. l High DC Current Gain hFE=3OOO(Typi@lC=4.0Adc . Collector-Emitter Sustaining Voltage - @ 100 mA VCE~(~~~I = 60 Vdc IMinI - 2N6053. 2N6055, 2N6298. 2N6300 = 80 Vdc (Min) 2N6054. 2N6056. 2N6299. 2N6301 l Low Collector-Emitter Saturation Voltage vCE(rat) = 2.0 Vdc (Maxi @ IC = 4.0 Adc = 3.0 Vdc (Max) @ ly: = 8.0 Adc Range THERMAL C&SE 11 TO1 CHARACTERlSTlCd `- L I --`:,":p ,-, CASE 80 02 TO 66 ~ :,:`: *E LECTR ICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol I Min I Max I Unit OFF CHARACTERISTICS Collector-Emitter (l C=l Sustaining OOmAdc, Collector Cutoff Voltage (1) lB=O) 2N6055, 2N6298, 2N6300 60 -- 2N6054, 2N6056, 2N6299, 2N6301 80 -- Current ICEO (VCE=30VdC, lB=O) 2N6053, 2N6055, 2N6298, 2N6300 -- (vcE=40vdC, lB=O) 2N6054, 2N6056, 2N6299, 2N6301 -- Collector Cutoff Current = 1.5 Vdc) -- (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C -- Cutoff (VgE .{;, "'~~y$:o ,.*., ~.< ,,. .,, t:y\...t,::} ..\''4.~,\ ,::&\ ,>{?.. ,, ,..".>"::. "..**,,::L~.. 2.0 !!,, ~~ ~:,,{?.:' lEgO Current = 5.0 Vdc, Ic=O) Collector-Emitter Saturation IB = 16mAdc) (1c = 8. OAdc, Ii Base-Emitter Saturation (Ic = 8.0 Adc, Base-Emitter ,<,). I ,+{, .,, .d\?i.\, ~.~.".. .l~+::.:." .. VBE(sat) .;.': ~.3.< ,. . :. ~%t..,, , ~,'$;:: .*\\> i\>N ,,,...,.,,,.. . `~ *3-;........i,:,.).. :{<,,. VgE(on) .,, .,:, mAdc) Voltage mAdc) 16 =80 O n Voltage (IC = 4.0 Adc, VCE = 3.0 Vdc) DYNAMIC Magnitude Emitter Small-Signal Short Cir+@$.rent Capacitance (VCB = 10 Vdc,l E= O, f=O.l 4 3.0 Transfer Ratio MHz) `~~~%, 2N6056, `.:,,, , . >.>,tt,,' +,~~;-,b,y.., Small-Signal Current Gain <,. (IC = 3.0 Adc, VCE = 3.0 Vdc, f .='?$%~,$~z) .$,i~,.$.e s,,\ < .,! !., Vd C 4,0 Vdc 2.8 -- Ihfel (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output .}y$~,:~~i.,"" # , .*&? ~p ;; J;+,~, ~>$ ,.., ., 2-;ZN6054, mAdc 2.0 ..., ,*<.~':\, > ./t, , .... `* CHARACTERISTICS of Common I *J ;t.@p'~5at) Voltage (l C=4.0Adc, =80 0.5 ,?s" "''!+t. Ohk :$:+-* `q, ..,, ,>,,::~:> ...... .,~: ,.,,~'. ,,:., mAdc .,,~f~.;t$? `<$;? .,>+< .>$, ~:& ICEX (VCE = Rated VCB, VBE(off) Emitter Vd% .~~;~,k+ ~~>., ${~?$xk.M5:. ...,. ..,,, L*? ,+,? ?$,,. ~< `l:., .. \,\~~ht $`, $$tkm,gc VCEO(SUS) 2N6053, 4.0 -- Cob pF 2N6298, 2N6299 -- 300 2N6300, 2N6301 -- 200 300 -- -- hfe FIGURE 3 - SWITCHING TIMES 5.0 3.0 2,0 1.0 = 0.7 : b 0.5 ; 0.3 0.2 for td and t,, D1 is disconnected `B'Ov M25 tr, tfGIOns OUTY CYCLE= 8ndv2=o 0.1 1,0% 0.07 0.05 0.1 For N PN test circuit reverse diode, polarities and input 0.2 0,3 0.5 0.7 1.0 2,0 3,0 pulses. Ic, coLLEcTo R CURRENT (AMP) MOTOROLA Semiconductor Produces Inc. @ 5.0 7.0 10 PNP N PN 2N6053, 2N6054, 2N6298, 2N6299 2N6055, 2N6056, 2N6300, 2N6301 FIGURE 0.1 0.2 0,3 0,5 Ic, COLLECTOR 1.0 2.0 CURRENT 3.0 I 12 - TEMPERATURE 5.0 7.0 COEFFICIENTS 10 (AMP) FIGURE 13 - COLLECTOR CUT-atFFti~GION IF" I I I F -[ I ,, I x I /! -FORWARn 1/ II [ [ /! J ,.:.,: I : 0 k u ]02 ~ 101. w. I TI=1500cl I I , 1 / I u .-1 ,"-, I r I A I I I I I 1 1 1 1 I +0.4 I tO.6 I tO.8 I I tl.2 ,{ # r / I / I J y I , -0.6 -0.4 8 -0.2 0 -1 to.2 VBE, BASE EMITTER 14 - DARLINGTON I , / , 25QC j I , n J 0 IOOQC I r J I , J --~ 100-- II 1, / r , 1 VOLTAGE tl,o (VO LTS) SCHEMATIC NPN 2N6055 2N6056 2N6300 2N6301 Collector ~------------ -- 1 I I Base w / I I I =8.0 k =60 I L- 6 Emitter .---- -- ------ --- `3; Emitter J I tl.4 ~ NPN PN P 2N6053, 2N6054, 2N6298, 2N6299 FIGURE 2N6055, 2N6056,2N6300, [ DC CURRENT 9- 2N6301 GAIN 20,000 ..-. 1U,uuu 7000 = I [ I [ I I I I 1 I I I I Ixl 5000 -T.I= = HI 1 1 I I I I I I I I I I A 1 I I I I I I 150Cn 2000 w 1 1 1 I 1 1 1 I 1 1 1 I 1 1 1 1 1 LUU r I I I 0,1 0.2 I I 0.5 0.3 I I I I I 0.7 I 1,0 IC, COLLECTOR I I 3.0 2.0 CURRENT I I I 5.0 I I Wllll YI I I j,2 013 1 300 300 -." I I I I I 7.0 10 200 I I :* ,... L, I 1 I 1 2.0 3.0 1 1 ji*~;7Fl,la 0.1 5.0 7.0 la (AMP) FIGURE 10 - COLLECT( I , d I 0.3 i 0.5 I I I 0.7 1.0 I II ~ t , I I I ) 1111111 1.0 0.3 0.5 0,7 1.0 2,0 3.0 IB, BASE CURRENT 5.0 7,0 10 2a 30 (mA) H FIGURE 11 - "ON" VOLTAGES 3,0 2.5 p 1 0 = u ~ : > >. 2.0 1.5 1.0 0,5 0.1 Ic, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 Ic, COLLECTOR 1.0 2.0 CURRENT (AMP} 3.0 5.0 7.0 10 FIGURE 4 - THERMAL RESPONSE 0.1 0.05 ! ! ! I 1 , 1 2,0 , 1 3.0 1.0 are wo limitations on ~~~~~,~r handling ability I I I !11 -. .----, ------- I r ! 2N6299,2N6301 1 I I 1 1 1 I 11 20 30 5.0 7.0 10 I \ Iv I , 50 70 100 VCE, COLLECTOR-EMITTERVOLTAGE (VOLTS) VCE, COLLECTOR-EMITT~@Wdi;@$ (VOLTS) ,... There ! , I Of a transistor: average junction tems~ra~re and second breakdown. Safe operating area curves indicate"~~ -~VCE iiMitS Of the transistor that must be observed for ~@~&~J~-~$Peration; i.e., the transistor must not be subjected to grea~ di~lpation than tha curves indicate. The data of Figures ~.and ~@ based on TJ(Dk) = 200C; T= is ,,., variable depending on conditions. Second breakdown pulse limits are valid for dutv cvcles to IOY. provided TJ(pk) = 200C. TJ(pk) mav ba calculated from tha data in Figure 4. At high case temperatures, thermal limitations will reducetha power that can be handled to values less than the limitations imposed bv second breakdown. (See AN-415). FIGURE 8 - CAPACITANCE 300 200 -- 0.1 -f, FREQUENCY(kHz) MOTOROLA @ 0.2 2N6053, 2N6054, 2N6298, 2N6299(PNP) 2N6055, 2N6056, 2N6300, 2N6301(NPN) 0.5 1.0 2.0 5.0 10 20 VR, REVERSEVOLTAGE (VOLTS) 50 100 o @ -@ BOX 20912 7269PRINTED IN USA2-72 IMPERIAL LITHOBDO~] PHOENIX, MOTOROLA INC., 1972 ARIzoNA 85036 0 A SUBSIDIARY OF MOTOROLA INC. IN DS3231