DARLINGTOV COMPLEMENTARY
SILICON POWER TRANSISTORS
designed for generalbpurpose amplifier and low-speed switching
applications.
l High DC Current Gain -
hFE=3OOO(Typi@lC=4.0Adc
. Collector-Emitter Sustaining Voltage - @ 100 mA
VCE~(~~~I = 60 Vdc IMinI - 2N6053. 2N6055, 2N6298. 2N6300
= 80 Vdc (Min) 2N6054. 2N6056. 2N6299. 2N6301
l Low Collector-Emitter Saturation Voltage -
vCE(rat) = 2.0 Vdc (Maxi @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ ly: = 8.0 Adc
i-
““~y-q.j yy’,“Q
7 ‘yvJ /^ 1 ;;‘,/I”
. . .
Range C&SE 11
THERMAL CHARACTERlSTlCd TO1
‘-
L I --‘:,“:p ,-, ~ :,:‘:
CASE 80 02
TO 66
*E LECTR ICAL CHARACTERISTICS (Tc =25°C unless otherwise noted)
Characteristic ISymbol IMin IMax Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) VCEO(SUS)
(l C=l OOmAdc, lB=O) Vd%
2N6053, 2N6055, 2N6298, 2N6300 60 .~~;~,k+
—${~?$xk.M5:....
~~>.,,.
2N6054, 2N6056, 2N6299, 2N6301 80 ..,,, L*?
—,+,??$
,,. ~<‘l:.,
Collector Cutoff Current .. \,\~~ht
ICEO
(VCE=30VdC, lB=O) $‘, $$tkm,gc
2N6053, 2N6055, 2N6298, 2N6300 0.5 ,?s” “’’!+t.
(vcE=40vdC, lB=O)
—
2N6054, 2N6056, 2N6299, 2N6301 —Ohk :$:+-* ‘q,
Collector Cutoff Current ..,,
,>,,::~:> ......
ICEX
(VCE =Rated VCB, VBE(off) =1.5 Vdc)
.,~:,.,,~’. ,,:., mAdc
.,,~f~.;t$?‘<$;?.,>+<
.>$, ~:&
(VCE =Rated VCB, VBE(off) =1.5 Vdc, TC =150°C
—
—.{;, “’~~y$:o
~.<
,.*., ,,.
.,, t:y\...t,::}
Emitter Cutoff Current lEgO ..\’’4.~,\,::&\
,>{?..
,..”.>“::. mAdc
(VgE =5.0 Vdc, Ic=O) ,,
“..**,,::L~.. 2.0
!!,, ~~~:,,{?.:’
Collector-Emitter Saturation Voltage
I
*J;t.@p’~5at)
(l C=4.0Adc, IB =16mAdc) ,<,). ,+{, I
(1c =8. OAdc, Ii =80 mAdc) .,,
.d\?i.\,
~.~.”..
Base-Emitter Saturation Voltage .l~+-::.:.” ..
.;.’: ~.3.< VBE(sat)
(Ic =8.0 Adc, 16 =80 mAdc) ,. .
:. ~%t..,,,~,’$;::
.*\\> i\>N
Base-Emitter OnVoltage ,,,...,.,,,...
‘~*3-;........i,:,.)..
:{<,,. VgE(on)
(IC =4.0 Adc, VCE =3.0 Vdc) .,,
.,:, 4
2.0
3.0
Vd C
4,0
Vdc
2.8
DYNAMIC CHARACTERISTICS ...,
,*<.~’:\,>
./t,
,..... ‘*
Magnitude of Common Emitter Small-Signal Short Cir+@$.rent Transfer Ratio
(IC =3.0 Adc, VCE =3.0 Vdc, f=1.0 MHz) .}y$~,:~~i.,”” Ihfel —
4.0 —
Output Capacitance #,.*&? ~p
;; J;+,~, ~>$ Cob
(VCB =10 Vdc,l E= O, f=O.l MHz) pF
,.., .,
2-;ZN6054, 2N6298, 2N6299 —300
‘~~~%, 2N6056, 2N6300, 2N6301 —200
‘.:,,, ,..
Small-Signal Current Gain >.>,tt,,’+,~~;-,b,y..,
<,. hfe
(IC =3.0 Adc, VCE =3.0 Vdc, f.=’?$%~,$~z)
—
300 —
.$,i~,.$.es,,\ <
.,!!.,
FIGURE 3 – SWITCHING TIMES
5.0
3.0
2,0
1.0
=0.7
:0.5
b
;0.3
0.2
0.1
0.07
0.05
0.1 0.2 0,3 0.5 0.7 1.0 2,0 3,0 5.0 7.0 10
‘B’Ov M25° 8ndv2=o
for td and t,, D1 isdisconnected
tr, tfGIOns
OUTY CYCLE= 1,0%
For NPN test circuit reverse diode, polarities and input pulses. Ic,coLLEcToRCURRENT(AMP)
MOTOROLA Semiconductor Produces Inc. @
PNP
I
NPN
2N6053, 2N6054, 2N6298, 2N6299 2N6055, 2N6056, 2N6300, 2N6301
FIGURE 12 – TEMPERATURE COEFFICIENTS
0.1 0.2 0,3 0,5 1.0 2.0 3.0 5.0 7.0 10
Ic, COLLECTOR CURRENT (AMP)
FIGURE 13 – COLLECTOR CUT-atFFti~GION
6
Emitter
,.:.,:
IF” ,, I
II I IIx1/ II
F-[ -FORWARn /! [ [ /! J
:]02 III / I /II I I I I
0I,1r,1, r,r
kTI=1500cl I
uIJAI I I
w. n,{ I
~101. J#
0,,
uJr
—IOOQC
—~ / /
100 /I
J
25QC j,II1 1 1 1
.-1 y1
,“-, ,I8-1 II I I I I
-0.6 -0.4 -0.2 0to.2 +0.4 tO.6 tO.8 tl,o tl.2 tl.4
VBE, BASE EMITTER VOLTAGE (VO LTS)
14 – DARLINGTON SCHEMATIC
NPN
2N6055
2N6056
2N6300
2N6301 I
I
Base wI
I
I
I
L-
Collector
‘3;
~—————— –- 1
/
=8.0 k=60
.—— — ——— —- J
Emitter
~
PNPNPN
2N6053, 2N6054, 2N6298, 2N6299 [2N6055, 2N6056,2N6300, 2N6301
FIGURE 9– DC CURRENT GAIN
20,000
..-.
1U,uuu I[ I I I 1I I 1 1 I I I I I I I I I
7000 I[II I Ixl IA1I I II I I
=5000 HI
=-T.I= 150°Cn
1w1 1 I1111 1 I I 1 1 11 1 1 1
300
-.”
LUU rI I II I I I I I I I I I I I I I I II
0,1 0.2 0.3 0.5 0.7 1,0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
FIGURE 10 – COLLECT(
I
II II
IiII
0.3 0.5 0.7 1.0
2000 I I IWllll
YI
I I I I:* ,...
300 L,I1I1 1 1
200 0.1 j,2 013 ji*~;7Fl,la 2.0 3.0 5.0 7.0 la
d, t , I I I )
~1.0 1111111
0.3 0.5 0,7 1.0 2,0 3.0 5.0 7,0 10 2a 30
IB, BASE CURRENT (mA)
H
FIGURE 11 –“ON” VOLTAGES
Ic, COLLECTOR CURRENT (AMP)
3,0
2.5
p
1
02.0
=
u
~
:1.5
>
>.
1.0
0,50.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Ic, COLLECTOR CURRENT (AMP}
FIGURE 4 – THERMAL RESPONSE
VCE,COLLECTOR-EMITT~@Wdi;@$ (VOLTS)
,...
There are wo limitations on ~~~~~,~r handling ability Of a
transistor: average junction tems~ra~re and second breakdown.
Safe operating area curves indicate”~~ -~VCE iiMitS Of the transistor
that must be observed for ~@~&~J~-~$Peration; i.e., the transistor
must not be subjected to grea~ di~lpation than tha curves indicate.
The data of Figures ~.and ~@ based on TJ(Dk) =200°C; T= is
,,.,
-f, FREQUENCY(kHz)
@MOTOROLA
! ! ! !I I I !11 -. .----, -------
0.1 I I \ Iv I
I , , , r!2N6299,2N6301 ,
0.05 1 1 1 I11 1 I1 1 I I 1
1.0 2,0 3.0 5.0 7.0 10 20 30 50 70 100
VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS)
variable depending on conditions. Second breakdown pulse limits
are valid for dutv cvcles to IOY. provided TJ(pk) =200°C. TJ(pk)
mav ba calculated from tha data in Figure 4. At high case tempera-
tures, thermal limitations will reducetha power that can be handled
to values less than the limitations imposed bv second breakdown.
(See AN-415).
FIGURE 8 – CAPACITANCE
300
200
2N6053,2N6054,2N6298,2N6299(PNP)
—2N6055,2N6056,2N6300,2N6301(NPN)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
VR,REVERSEVOLTAGE (VOLTS)