NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 0.1
10 µA
µA
VCB
=40V
VCB
=40V, Tamb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5
1
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.25 V IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1VIC=1A,V
CE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
300
IC=50mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT150 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX449
3-173
C
B
E
D.C.
1s
100ms
10ms
1.0ms
300 µs
100µs
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
V
BE(sat)
- (Volts)
V
BE(on)
- (Volts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operatin g Area
1 10 100
0.01
0.1
1
10 Single Pulse T e st at Tamb=25°C
40
80
120
160
200
010
0.2
0.4
0.6
0.8
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.001 0.01 0.1 1
IC/IB=10
0.1 1
IB1=IB2=IC/10
0.01
ts
tf
td
tr
ts
ns
tf,tr,td
ns
100
50
150
0
VCE=2V
0
IC/IB=10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
VCE=2V
ts
tf
td
tr
800
400
200
600
0
0.001 1
0.01 0.1 10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.001 1
0.01 0.1 10
0.001 1
0.01 0.1 10
0.1
VCE=10V
ZTX449
3-174
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 0.1
10 µA
µA
VCB
=40V
VCB
=40V, Tamb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5
1
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.25 V IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1VIC=1A,V
CE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
300
IC=50mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT150 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX449
3-173
C
B
E
D.C.
1s
100ms
10ms
1.0ms
300 µs
100µs
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
V
BE(sat)
- (Volts)
V
BE(on)
- (Volts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operatin g Area
1 10 100
0.01
0.1
1
10 Single Pulse T e st at Tamb=25°C
40
80
120
160
200
010
0.2
0.4
0.6
0.8
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.001 0.01 0.1 1
IC/IB=10
0.1 1
IB1=IB2=IC/10
0.01
ts
tf
td
tr
ts
ns
tf,tr,td
ns
100
50
150
0
VCE=2V
0
IC/IB=10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
VCE=2V
ts
tf
td
tr
800
400
200
600
0
0.001 1
0.01 0.1 10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.001 1
0.01 0.1 10
0.001 1
0.01 0.1 10
0.1
VCE=10V
ZTX449
3-174
