Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA ! These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Fast Turn-Off Times -- TC = 100C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive Storage Time (Typ) * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIII IIII III IIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III III v w IIIIIIII *Motorola Preferred Device 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS MAXIMUM RATINGS Rating Symbol MJ16010 MJ16012 MJW16010 MJW16012 Unit Collector-Emitter Voltage VCEO 450 Vdc Collector-Emitter Voltage VCEV 850 Vdc Emitter-Base Voltage VEB 6.0 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 15 20 Adc Base Current -- Continuous -- Peak (1) IB IBM 10 15 Adc Total Device Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) MJ16010 MJ16012 Watts TJ, Tstg 1 75 100 1.0 135 53 8 1.11 W/_C - 65 to 200 - 55 to 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case RJC Lead Temperature for Soldering Purposes, 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width 50 s, Duty Cycle TL Max 1.0 Unit 0.93 275 _C/W _C CASE 340F-03 TO-247AE MJW16010 MJW16012 10% Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII v IIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 -- -- Vdc -- -- -- -- 0.25 1.5 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) ICER -- -- 2.5 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- -- 10 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 15 RBSOA See Figure 16 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.3 Adc) (IC = 10 Adc, IB = 1.3 Adc, TC = 100_C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.3 Adc) (IC = 10 Adc, IB = 1.3 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) Vdc -- -- -- -- -- -- 2.5 3.0 3.0 -- -- -- -- 1.5 1.5 hFE 5.0 -- -- -- Cob -- -- 400 pF td -- 20 -- ns tr -- 200 -- ts -- 1200 -- tf -- 200 -- ts -- 650 -- tf -- 80 -- tsv -- 800 1800 tfi -- 50 200 tc -- 90 250 tsv -- 1050 -- tfi -- 70 -- tc -- 120 -- Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rose Time Storage Time Fall Time Storage Time (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.3 Adc, PW = 30 s, Duty Cycle 2.0%) (IB2 = 2.6 Adc, RB2 = 1.6 ) (VBE(off) = 5.0 Vdc) Fall Time Inductive Load (Table 2) Storage Time Fall Time Crossover Time Storage Time Fall Time (IC = 10 Adc, IB1 = 1.3 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (TC = 100_C) (TC = 150_C) Crossover Time (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2 ns 2.0% Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII III IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII v IIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 -- -- Vdc -- -- -- -- 0.25 1.5 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc. TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) ICER -- -- 2.5 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- -- 10 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 15 RBSOA See Figure 16 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) Vdc -- -- -- -- -- -- 2.5 3.0 3.0 -- -- -- -- 1.5 1.5 hFE 7.0 -- -- -- Cob -- -- 400 pF td -- 20 -- ns tr -- 200 -- ts -- 900 -- tf -- 150 -- ts -- 500 -- tf -- 40 -- tsv -- 650 1500 tfi -- 30 150 tc -- 50 200 tsv -- 850 -- tfi -- 30 -- tc -- 70 -- Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rose Time Storage Time Fall Time Storage Time (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 s, Duty Cycle 2.0%) (IB2 = 2.0 Adc, RB2 = 1.6 ) (VBE(off) = 5.0 Vdc) Fall Time Inductive Load (Table 2) Storage Time (TC = 100_C) Fall Time Crossover Time Storage Time Fall Time (IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (TC = 150_C) Crossover Time (1) Pulse Test: Pulse Width = 300 s, Duty Cycle ns 2.0% Motorola Bipolar Power Transistor Device Data 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 50 hFE , DC CURRENT GAIN TC = 100C 25C 20 10 5.0 VCE = 5.0 V 3.0 0.2 0.5 1.0 5.0 2.0 IC, COLLECTOR CURRENT (AMPS) 10 20 2.0 0.7 0.3 0.2 TC = 25C 0.1 0.02 0.05 1.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 5.0 3.0 2.0 1.0 0.7 0.5 f = 10 TC = 100C f = 10 TC = 25C 0.3 0.2 0.1 0.07 0.05 0.15 0.2 0.3 f = 5.0 TC = 25C 0.5 0.7 1.0 2.0 3.0 5.0 A IC = 1.0 A 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS) 5.0 5.0 7.0 10 f = 10 1.0 TC = 25C 0.7 75C 100C 0.5 0.4 0.3 0.2 0.15 0.15 0.2 0.3 15 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 104 10000 103 5000 3000 2000 TJ = 150C 102 125C 101 100C 75C 100 10-1 - 0.4 REVERSE FORWARD 10 Figure 2. Collector Saturation Region C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT ( A) 10 A 0.5 Figure 1. DC Current Gain VCE = 250 V 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 15 Cib 1000 500 300 200 100 Cob TC = 25C 50 20 25C Figure 5. Collector Cutoff Region 4 15 A 1.0 + 0.6 10 0.1 0.3 0.5 1.0 2.0 5.0 10 20 30 50 100 VR, REVERSE VOLTAGE (VOLTS) 300 500 850 Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 5000 5000 3000 2000 VBE(off) = 0 V 2.0 V 1000 t sv, STORAGE TIME (ns) t sv, STORAGE TIME (ns) 3000 2000 5.0 V 500 f* = 5.0 TC = 75C VCC = 20 V 300 200 100 0.07 0.05 1.5 VBE(off) = 0 V 2.0 V 1000 700 500 5.0 V 300 200 f* = 10 TC = 75C VCC = 20 V 100 2.0 3.0 5.0 7.0 0.05 1.5 15 10 2.0 3.0 Figure 7. Storage Time tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) VBE(off) = 0 V 300 5.0 V 200 100 2.0 V f* = 5.0 TC = 75C VCC = 20 V 10 1.5 2.0 3.0 5.0 7.0 10 500 300 200 100 50 20 10 1.5 15 VBE(off) = 0 V 2.0 V f* = 10 TC = 75C VCC = 20 V 2.0 Figure 9. Collector Current Fall Time 5.0 7.0 10 15 1500 1000 VBE(off) = 0 V 500 300 200 t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) 3.0 Figure 10. Collector Current Fall Time 1500 1000 50 5.0 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 15 10 1000 500 20 7.0 Figure 8. Storage Time 1000 50 5.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 5.0 V f* = 5.0 TC = 75C VCC = 20 V 20 15 1.5 2.0 2.0 V 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time 10 15 500 VBE(off) = 0 V 300 200 100 50 20 15 1.5 2.0 V f* = 10 TC = 75C VCC = 20 V 2.0 5.0 V 3.0 5.0 7.0 15 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Crossover Time I *f = C IB1 Motorola Bipolar Power Transistor Device Data 5 GUARANTEED SAFE OPERATING AREA LIMITS VCE(pk) 90% VCE(pk) tsv IC I B2 , REVERSE BASE CURRENT (AMPS) 10 IC(pk) 90% IC(pk) trv tfi tti tc VCE IB 10% VCE(pk) 90% IB1 10% IC(pk) 2% IC 9 8 7 6 4 3 1.0 A IC = 10 A TC = 25C 2 1 0 TIME IB1 = 2.0 A 5 0 Figure 13. Inductive Switching Measurements 4.0 1.0 2.0 3.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 5.0 Figure 14. Peak Reverse Base Current IC, COLLECTOR CURRENT (AMPS) 20 10 s 10 5.0 I C(pk) , PEAK COLLECTOR CURRENT (AMPS) SAFE OPERATING AREA INFORMATION MJ16010/12 MJW16010,12 1.0 ms dc 2.0 1.0 TC = 25C 0.5 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 5.0 I *f = C IB1 10 20 30 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 450 Figure 15. Maximum Forward Bias Safe Operating Area FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18. T J(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the 6 20 18 14 10 f* 4.0 TC 100C 6.0 VBE(off) = 0 V 1.0 to 5.0 V 2.0 0 100 150 600 700 850 200 250 350 450 VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 16. Maximum Reverse Bias Safe Operating Area power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics. Motorola Bipolar Power Transistor Device Data r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) 1.0 RJC(t) = r(t) RJC RJC = 1.0C/W or 1.11C/W TJ(pk) - TC = P(pk) RJC(t) 0.1 0.01 0.01 0.1 1.0 10 100 1K t, TIME (ms) Figure 17. Thermal Response POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 MJW16010, MJW16012 MJ16010, MJ16012 0 80 120 TC, CASE TEMPERATURE (C) 40 160 200 Figure 18. Power Derating Table 1. Resistive Load Switching td and tr 0V 2N6191 *IB T.U.T. RB = 10 50 + H.P. 214 or EQUIV. P.G. *IC RL - 10 F 0.02 F RB1 A RB2 0.02 F 2N5337 5 0 VCC 100 20 - 35 V H.P. 214 or EQUIV. P.G. + Vdc 11 Vdc ts and tf 500 1.0 F 100 -V VCC = 250 Vdc RL = 25 IC = 10 Adc IB = 1.0 Adc 11 V 0V Vin +V 0V -5 V T.U.T. A RL *IC tr 15 ns *Tektronix AM503 *P6302 or Equivalent 50 *IB VCC = 250 Vdc RL = 25 IC = 10 Adc VCC IB1 = 1.0 Adc RB1 = 10 IB2 = 2.0 Adc RB2 = 1.6 For VBE(off) = 5.0 V, RB2 = 0 Note: Adjust - V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 7 Table 2. Inductive Load Switching 0.02 F H.P. 214 or EQUIV. P.G. 100 + V 11 V 2N6191 20 + 0V 10 F - RB1 - 35 V A RB2 0.02 F 1.0 F + - 50 2N5337 500 100 -V IC(pk) T1 +V IC 0V VCE(pk) *IC -V L VCE T.U.T. A VCE(pk) = VCE(clamp) MR856 t1 (ICpk) [ LcoilVCC *IB 50 Vclamp IB1 VCC IB T1 adjusted to obtain IC(pk) VCEO(sus) L = 10 mH RB2 = VCC = 20 V Its Inductive Switching L = 200 H RB2 = 0 VCC = 20 V RB1 selected for desired IB1 RBSOA L = 200 H RB2 = 0 VCC = 20 V RB1 selected for desired IB1 *Tektronix AM503 *P6302 or Equivalent Scope -- Tektronix 7403 or Equivalent Note: Adjust - V to obtain desired VBE(off) at Point A. IB2 TYPICAL INDUCTIVE SWITCHING WAVEFORMS tsv IC(pk) = 10 A IB1 = 1.0 A VBE(off) = 5.0 V VCE(pk) = 400 V TC = 25C Time Base = 0 100 ns/cm tfi, tc VCE(pk) I B1 IC(pk) = 10 A IB1 = 1.0 A VBE(off) = 5.0 V VCE(pk) = 400 V TC = 25C Time Base = 20 ns/cm IC(pk) t fi = 20 ns VCE(pk) VCE(sat) t sv = 370 ns 8 I B2 VCE(sat) tc 24 ns Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C SEATING PLANE -T- E D K 2 PL 0.13 (0.005) U M Y M DIM A B C D E G H K L N Q U V -Y- L V T Q M 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -T- -Q- T B M E -B- C 4 U A R 1 K 2 3 -Y- P F V D 0.25 (0.010) M L Y Q S H J DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 3: PIN 1. 2. 3. 4. G INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 BASE COLLECTOR EMITTER COLLECTOR CASE 340F-03 TO-247AE ISSUE E Motorola Bipolar Power Transistor Device Data 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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