QS043-402-203812/5 2-O6.5 5 4 5(E1) 4(G1) 9 30 +1.0 - 0 .5 14 23.0 14 9 3 12 17 35 23 23 4-fasten tab #110 t=0.5 7 16 16 7 17 16 LABEL 4-fasten tab #110 t= 0.5 6 7 LABEL 7 6 5 4 3-M5 17.0 14 2-O 5.5 12 8 23.0 2 1 21.2 7.5 3-M5 94 80 0 .2 5 12 11 4 3 11 30 +1.0 - 0 .5 2 1 7 6 4 (C1) 3 12 4 18.0 (E2) 2 48.0 16.0 14.0 (C2E1) 1 7(G2) 6(E2) 4 94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 23 2 PDMB00BS12 PDMB00BS12C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . PDMB00BS12 . PDMB00BS12C . . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 100A,= 15V . . ate-mitter hreshold oltage = 5V,= 100mA . . nput apacitance = 10V,= 0V,= 1MH 6,300 witching ime = 600V L= 6.0 G= 15.0 = 15V . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent eak orward oltage everse ecovery ime . . . = 100A,= 0V . = 100A,= -10V i/t= 200A/s . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . QS043-402-203813/5 Fig.1- Output Characteristics (Typical) 12V VGE=20V T C=125C 200 VGE=20V 11V 180 12V 180 11V 15V 15V 160 160 140 Collector Current I C (A) Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 200 10V 120 100 9V 80 60 8V 40 140 10V 120 100 9V 80 60 8V 40 7V 7V 20 0 0 1 2 3 4 20 0 5 0 1 Collector to Emitter Voltage VCE (V) 200A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 4 8 12 16 100A 10 8 6 4 2 0 4 8 100000 14 30000 12 500 10 8 VCE =600V 6 400V 200 4 200V 100 0 0 100 200 300 400 500 20 600 VGE=0V f=1MHZ T C=25C 10000 Capacitance C (pF) 600 300 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =6.0( TC=25C 400 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 200A 12 0 20 IC=50A 14 Gate to Emitter Voltage VGE (V) 800 5 T C=125C 16 14 0 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C IC=50A 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 2 Cies 3000 1000 Coes 300 Cres 100 2 30 0 700 10 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 50 100 200 QS043-402-203814/5 Fig.7- Collector Current vs. Switching Time (Typical) Fig.8- Series Gate Impedance vs. Switching Time (Typical) 2 10 VCC=600V RG=15 ( VGE=15V T C=25C Resistive Load Switching Time t (s) Switching Time t (s) 1.6 tOFF 1.2 tf 0.8 0 tr(VCE) 0 20 40 60 80 1 toff tf ton 0.3 tON 0.4 3 VCC=600V IC=100A VGE=15V T C=25C Resistive Load tr (VCE) 0.1 100 10 30 Collector Current IC (A) Fig.9- Collector Current vs. Switching Time Fig.10- Series Gate Impedance vs. Switching Time tOFF 5 2 Switching Time t (s) Switching Time t (s) 1 tON 0.1 tr(Ic) 0.03 10 VCC=600V RG=15( VGE=15V T C=125C Inductive Load 3 tf 0.01 0.003 1 20 40 60 80 100 120 toff ton 0.2 tf 0.1 0.02 140 VCC=600V IC=100A VGE=15V T C=125C Inductive Load 0.5 0.05 0 tr(IC ) 10 30 Collector Current IC (A) 100 Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 100 40 VCC=600V RG=15( VGE=15V T C=125C Inductive Load 30 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 200 Series Gate Impedance RG (( ) 10 0.3 100 EON 20 EOFF ERR 10 0 VCC=600V IC=100A VGE=15V T C=125C Inductive Load 30 EON EOFF 10 ERR 3 1 0 25 50 75 Collector Current 100 IC 125 150 10 (A) 30 Series Gate Impedance RG (() 100 QS043-402-203815/5 Fig.14- Reverse Recovery Characteristics (Typical) Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 300 250 T C=125C 200 150 100 50 1 2 3 trr 300 100 10 3 4 IRrM 30 0 200 400 Forward Voltage VF (V) 600 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area (Typical) 1000 RG=15(, VGE=15V, T C=125C 500 Collector Current I C (A) 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 (/W) 0 (J-C) 0 Transient Thermal Impedance Rth Forward Current I F (A) T C=25C IF=100A T C=25C T C=125C FRD 5x10 -1 IGBT 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 TC=25 1x10 -3 1 Shot Pulse 5x10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 Time t (s) 1 10 1 800 1000 1200